A method for preparing solar cell sic anti-reflection film by tubular direct pecvd

Abstract

The invention discloses a method for preparing a SiC anti-reflection film for solar cells by tubular direct PECVD, which comprises the following steps: texturing a silicon wafer, and depositing a SiC anti-reflection film on the obtained silicon wafer in a furnace tube of a tubular PECVD equipment; cooling, The silicon wafer is taken out to complete the preparation of the SiC anti-reflection film. By utilizing the tubular PECVD equipment and improving the process steps and process parameters, the method of the invention can be compatible with the existing production line equipment to realize the deposition of the SiC anti-reflection film without changing the equipment, which is not only conducive to improving the old production line or the old production line. The utilization rate of equipment has the advantages of low mass production threshold, and also has the advantages of low investment cost of equipment and low preparation cost, and the SiC anti-reflection film obtained from this shows better performance, such as lower light absorption Therefore, it is beneficial to prepare solar cells with high photoelectric conversion efficiency, which is of great significance for realizing the wide application of solar cells.

Description

technical field [0001] The invention belongs to the field of preparation of anti-reflection films for solar cells, and relates to a method for preparing SiC anti-reflection films for solar cells by tubular direct PECVD. Background technique [0002] Reducing the reflectivity is an important means to improve the conversion efficiency of solar cells, and the anti-reflection coating is the most effective means to reduce the reflectivity. SiN is generally used as an optical anti-reflection film in the photovoltaic industry, but with the improvement of cell efficiency and the improvement of market component reliability requirements, the shortcomings of SiN films are gradually reflected, specifically: (1) The absorption peak of SiN film itself is located at In the range of 500-600nm, the SiN film itself will also absorb sunlight, and the incident light absorbed in the SiN film accounts for 2-3% of the total incident light capacity. However, the sunlight in the range of 500-600nm h...

AI Technical Summary

Problems solved by technology

However, in the prior art, 13.56MHz plasma-enhanced chemical vapor deposition technology is used to prepare SiC anti-reflection film. The deposition temperature of this solution is lower (less than 250°C), and the deposition time is longer (up to 45min), which is not conducive to improving production efficiency. , will increase the production cost and cannot be mass-produced; at the same time, because the solution uses the remote plasma method, and the equipment used in the existing remote plasma method is not a common equipment on the production line, it is impossible to use the existing production line equipment to realize SiC anti-reflection The preparation of the film will increase the cost of new equipment, resulting in higher production costs; in addition, the PECVD equipment used in the existing remote plasma method cannot guarantee that the SiC anti-reflection film has excellent anti-reflection effect and good passivation at the same time. effect