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Bismuth vanadate electrode rich in surface layer oxygen vacancies, and preparation method and application thereof

A technology of bismuth vanadate and oxygen vacancies, applied in electrodes, electrolytic processes, electrolytic components, etc., can solve problems such as difficult control of bulk oxygen vacancy content, bismuth vanadate gap, poor charge transport carrier separation ability, etc., to achieve High photoelectric conversion efficiency and photocurrent density, low cost, and the effect of avoiding bulk defect sites

Active Publication Date: 2020-02-14
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is still a large gap in the theoretical photoelectric ionization value of bismuth vanadate, which is mainly attributed to the poor charge transport and carrier separation ability. 5
The bulk doping of impurity elements can effectively increase the majority carrier concentration of bismuth vanadate, thereby improving the charge transport ability, but this method will inevitably introduce new recombination centers 6
A similar effect can also be obtained by introducing oxygen vacancies into the bulk phase, but the content of oxygen vacancies in the bulk phase is not easy to control

Method used

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  • Bismuth vanadate electrode rich in surface layer oxygen vacancies, and preparation method and application thereof
  • Bismuth vanadate electrode rich in surface layer oxygen vacancies, and preparation method and application thereof
  • Bismuth vanadate electrode rich in surface layer oxygen vacancies, and preparation method and application thereof

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Experimental program
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Effect test

Embodiment 1

[0037] (1) Preparation of precursor solution: Weigh 0.2425g of bismuth nitrate and 0.1325g of vanadium oxide acetylacetonate, and dissolve them in 500 μL of dimethyl sulfoxide to obtain a 1mol / L precursor solution;

[0038] (2) Take 75 μL of the above precursor solution and drop-coat it on a 2×2 cm preheated to 60°C 2 On the FTO conductive glass;

[0039] (3) The precursor solution is uniformly coated on the FTO by a spin coater according to certain spin coating parameters. The spin coating parameters are 1000rpm for 20s, 4000rpm for 40s, and an acceleration of 1000rpm / s;

[0040] (4) Place the above sample in a tube furnace with an air atmosphere for sintering, the sintering system is 450-500°C for 2h, the heating rate is 5°C / min, and then cooled to room temperature to obtain a bismuth vanadate thin film electrode (denoted as BVO );

[0041] (5) The above-mentioned bismuth vanadate thin film electrode is immersed in the potassium borate solution of 1mol / L that the pH that c...

Embodiment 2

[0044] Adopt the method for embodiment 1 to react, and its difference is only, does not comprise step (5).

Embodiment 3

[0046] Adopt the method for embodiment 1 to carry out reaction, and its difference is only, the substrate in the step (2) is ITO conductive glass.

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Abstract

The invention belongs to the technical field of photoelectrochemical cell semiconductor electrodes, and discloses a bismuth vanadate electrode rich in surface layer oxygen vacancies, and a preparationmethod and an application thereof. The electrode comprises a conductive substrate layer and a bismuth vanadate layer, and the bismuth vanadate layer is obtained through photoetching modification. Thepreparation method comprises the steps: firstly, growing bismuth vanadate particles on a conductive substrate by a metal organic matter decomposition method, then immersing the bismuth vanadate particles in an alkaline buffer solution containing sulfite, and simultaneously applying illumination with certain wavelength and certain intensity for certain time to finish the preparation of the whole electrode. The electrode can be assembled into a photoelectrochemical cell for hydrogen production by photolysis of water in the photoelectrochemical cell. The oxygen vacancies are introduced into thesurface layer of the bismuth vanadate electrode, so that the charge separation efficiency of a solid-liquid interface is effectively improved, the photoelectric conversion efficiency of the photoelectrochemical cell is improved, the operation is simple, and the oxygen vacancy introduction efficiency is high; and meanwhile, vacuum equipment is not needed, so that the operation cost is extremely low, and large-scale production is facilitated.

Description

technical field [0001] The invention belongs to the technical field of photoelectrochemical cell semiconductor electrodes, and in particular relates to a bismuth vanadate electrode and a preparation method and application thereof. Background technique [0002] Energy and the environment have become the focus of global attention. Photoelectrochemical cells can convert solar energy into hydrogen and store it for hydrogen production. 1 , and hydrogen as a clean energy can effectively alleviate environmental problems. Therefore, the role of the photoelectrochemical cell for hydrogen production from water splitting cannot be ignored. 2 . [0003] In the research of hydrogen production by photolysis of water in photoelectrochemical cells, monoclinic bismuth vanadate is the most widely used semiconductor anode material with visible light response. 3-4 . However, there is still a large gap in the theoretical photoelectric ionization value of bismuth vanadate, which is mainly att...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B11/06C25B1/04
CPCC25B1/04C25B1/55C25B11/051C25B11/075Y02E60/36Y02P20/133
Inventor 巩金龙冯时佳王拓刘斌胡聪玲
Owner TIANJIN UNIV
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