A bismuth vanadate electrode rich in surface oxygen vacancies and its preparation method and application

A bismuth vanadate and oxygen vacancy technology, applied in electrodes, electrolysis components, electrolysis processes, etc., can solve the problems of poor charge transport carrier separation ability, bismuth vanadate gap, and difficult to control the bulk oxygen vacancy content, and achieve The effect of avoiding bulk defect sites, low cost, high photoelectric conversion efficiency and photocurrent density

Active Publication Date: 2021-11-16
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is still a large gap in the theoretical photoelectric ionization value of bismuth vanadate, which is mainly attributed to the poor charge transport and carrier separation ability. 5
The bulk doping of impurity elements can effectively increase the majority carrier concentration of bismuth vanadate, thereby improving the charge transport ability, but this method will inevitably introduce new recombination centers 6
A similar effect can also be obtained by introducing oxygen vacancies into the bulk phase, but the content of oxygen vacancies in the bulk phase is not easy to control

Method used

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  • A bismuth vanadate electrode rich in surface oxygen vacancies and its preparation method and application
  • A bismuth vanadate electrode rich in surface oxygen vacancies and its preparation method and application
  • A bismuth vanadate electrode rich in surface oxygen vacancies and its preparation method and application

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Experimental program
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Effect test

Embodiment 1

[0037] (1) Preparation of precursor solution: Weigh 0.2425g of bismuth nitrate and 0.1325g of vanadium oxide acetylacetonate, and dissolve them in 500 μL of dimethyl sulfoxide to obtain a 1mol / L precursor solution;

[0038] (2) Take 75 μL of the above precursor solution and drop-coat it on a 2×2 cm preheated to 60°C 2 On the FTO conductive glass;

[0039] (3) The precursor solution is uniformly coated on the FTO by a spin coater according to certain spin coating parameters. The spin coating parameters are 1000rpm for 20s, 4000rpm for 40s, and an acceleration of 1000rpm / s;

[0040] (4) Place the above sample in a tube furnace with an air atmosphere for sintering, the sintering system is 450-500°C for 2h, the heating rate is 5°C / min, and then cooled to room temperature to obtain a bismuth vanadate thin film electrode (denoted as BVO );

[0041] (5) The above-mentioned bismuth vanadate thin film electrode is immersed in the potassium borate solution of 1mol / L that the pH that c...

Embodiment 2

[0044] Adopt the method for embodiment 1 to react, and its difference is only, does not comprise step (5).

Embodiment 3

[0046] Adopt the method for embodiment 1 to carry out reaction, and its difference is only, the substrate in the step (2) is ITO conductive glass.

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Abstract

The invention belongs to the technical field of photoelectrochemical cell semiconductor electrodes, and discloses a bismuth vanadate electrode rich in surface oxygen vacancies and its preparation method and application. It is obtained by etching modification; firstly, bismuth vanadate particles are grown on a conductive substrate by the method of metal organic decomposition, and then immersed in an alkaline buffer solution containing sulfite, while applying a certain time and a certain wavelength and intensity The whole electrode can be assembled into a photoelectrochemical cell for the photoelectrochemical cell photolysis of water to produce hydrogen. The invention introduces oxygen vacancies at the surface of the bismuth vanadate electrode, effectively increasing the charge separation efficiency of the solid-liquid interface, thereby improving the photoelectric conversion efficiency of the photoelectrochemical cell, and the operation is simple, and the efficiency of introducing oxygen vacancies is high. It requires the help of vacuum equipment, and the operation cost is extremely low, which is conducive to large-scale production.

Description

technical field [0001] The invention belongs to the technical field of photoelectrochemical cell semiconductor electrodes, and in particular relates to a bismuth vanadate electrode and a preparation method and application thereof. Background technique [0002] Energy and the environment have become the focus of global attention. Photoelectrochemical cells can convert solar energy into hydrogen and store it for hydrogen production. 1 , and hydrogen as a clean energy can effectively alleviate environmental problems. Therefore, the role of the photoelectrochemical cell for hydrogen production from water splitting cannot be ignored. 2 . [0003] In the research of hydrogen production by photolysis of water in photoelectrochemical cells, monoclinic bismuth vanadate is the most widely used semiconductor anode material with visible light response. 3-4 . However, there is still a large gap in the theoretical photoelectric ionization value of bismuth vanadate, which is mainly att...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25B1/55C25B11/052C25B11/087C25B1/04
CPCC25B1/04C25B1/55C25B11/051C25B11/075Y02E60/36Y02P20/133
Inventor 巩金龙冯时佳王拓刘斌胡聪玲
Owner TIANJIN UNIV
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