Aerogel thermal insulation structure broadband infrared detector and preparation method thereof
An infrared detector and aerogel technology, which is applied in the field of infrared detectors, can solve the problems of increasing the complexity of the device process, loss of infrared radiation information, and increasing the preparation cost, so as to achieve broadband imaging, reduce the preparation cost, and improve the finished product. rate effect
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Embodiment 1
[0041] 1. Prepare a silica airgel film on a silicon wafer by a sol-gel method with a thickness of 2 μm.
[0042] 2. A silicon dioxide film is prepared on the silicon dioxide airgel film by magnetron sputtering, with a thickness of 50 nm.
[0043] 3. A manganese-cobalt-nickel-oxygen thermistor film was prepared on a silicon dioxide film by chemical solution deposition, with a thickness of 0.2 μm.
[0044] 4. Manganese-cobalt-nickel-oxygen thin-film detection elements are prepared on the manganese-cobalt-nickel-oxygen thermistor film through photolithography, corrosion, development and other photolithographic patterning processes. The area of the detection element is 30 μm×30 μm.
[0045] 5. Through photolithography, corrosion, development and other photolithographic patterning processes, the dual ion beam sputtering method is used to prepare chromium and gold composite electrodes at both ends of the manganese-cobalt-nickel-oxygen thin film detector element, with a thickness o...
Embodiment 2
[0047] 1. Prepare a silica airgel film on a silicon wafer by a sol-gel method with a thickness of 3 μm.
[0048] 2. A silicon dioxide film is prepared on the silicon dioxide airgel film with a thickness of 100 nm by magnetron sputtering.
[0049] 3. A manganese-cobalt-nickel-oxygen thermistor film was prepared on a silicon dioxide film by magnetron sputtering, with a thickness of 0.6 μm.
[0050] 4. Manganese-cobalt-nickel-oxygen thin-film detection elements are prepared on the manganese-cobalt-nickel-oxygen thermistor film through photolithography, corrosion, development and other photolithographic patterning processes. The area of the detection element is 50 μm×50 μm.
[0051] 5. Through photolithography, corrosion, development and other photolithographic patterning processes, the dual ion beam sputtering method is used to prepare chromium and gold composite electrodes at both ends of the manganese-cobalt-nickel-oxygen thin film detector element, with a thickness of 30nm a...
Embodiment 3
[0053] 1. Prepare a silica airgel film on a silicon wafer by a sol-gel method with a thickness of 5 μm.
[0054] 2. A silicon dioxide film was prepared on the silicon dioxide airgel film by magnetron sputtering, with a thickness of 150 nm.
[0055] 3. A manganese-cobalt-nickel-oxygen thermistor film was prepared on a silicon dioxide film by magnetron sputtering, with a thickness of 1 μm.
[0056] 4. Manganese-cobalt-nickel-oxygen thin-film detection elements are prepared on the manganese-cobalt-nickel-oxygen thermistor film through photolithography, corrosion, development and other photolithographic patterning processes. The area of the detection element is 75 μm×75 μm.
[0057] 5. Through photolithography, corrosion, development and other photolithographic patterning processes, the magnetron sputtering method is used to prepare chromium and gold composite electrodes at both ends of the manganese-cobalt-nickel-oxygen thin film detector element, with a thickness of 30nm and 1...
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