Photoelectric detector based on magnesium nitride film and preparation method thereof

A photoelectric detection and thin film technology, which is applied to electrical components, semiconductor devices, circuits, etc., can solve problems such as lack of research and instability, and achieve the effects of simple process, improved stability, and avoiding secondary pollution

Active Publication Date: 2020-05-05
JILIN UNIV
View PDF3 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To develop Mg 3 N 2 Photodetection devices first need to prepare high-quality Mg 3 N 2 Bulk single crystal or large area of ​​Mg 3 N 2 Thin film materials, and resea...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoelectric detector based on magnesium nitride film and preparation method thereof
  • Photoelectric detector based on magnesium nitride film and preparation method thereof
  • Photoelectric detector based on magnesium nitride film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] (1) Put the sapphire substrate in acetone for 10 minutes, then put it in ethanol for 10 minutes, and finally put it in deionized water for 10 minutes, and dry it with nitrogen for later use.

[0023] (2) Put the high-purity chromium target with a purity of 99.95% and the cleaned sapphire substrate into the growth chamber of radio frequency magnetron sputtering, and block between the substrate and the target with a baffle, and the chromium target and the substrate Adjust the distance between them to 8cm. Turn on the power, turn on the cooling water system, turn on the vacuum system, and pump the vacuum of the growth chamber to 5×10 -4 Pa. Turn on the heating power supply, and heat the substrate to 500°C. High-purity Ar with a purity of 99.9995% was introduced, the Ar flow rate was 100 sccm, and the pressure in the growth chamber was controlled to be 3.0 Pa. Turn on the radio frequency source connected to the chromium target, adjust the ignition, and adjust the power o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a photoelectric detector based on a magnesium nitride film and a preparation method thereof, which belongs to the field of semiconductor photoelectric detectors. The preparation method comprises the steps of firstly, growing a layer of transition metal electrode on a substrate by adopting a magnetron sputtering or evaporation technology; using a wet etching technology or adry etching technology to prepare an interdigital electrode structure ; then growing an Mg3N2 thin film on the substrate with the prepared interdigital electrode structure by adopting a reaction radiofrequency magnetron sputtering method; and finally growing a BN or AlN thin film as an Mg3N2 protective layer on the Mg3N2 thin film in an in-situ sputtering manner, so as to obtain the photoelectricdetection device based on the Mg3N2 thin film. According to the invention, the application of Mg3N2 in the field of photoelectric functional materials and devices is expanded; the BN or AlN thin filmnot only effectively inhibits hydrolysis of the Mg3N2 thin film and improves the stability of the Mg3N2 thin film, but also is transparent in infrared, visible light and most ultraviolet bands, and is an ideal optical window of the Mg3N2 photoelectric device.

Description

technical field [0001] The invention belongs to the field of semiconductor photodetectors, and in particular relates to a photodetector device based on a magnesium nitride thin film and a preparation method thereof. Background technique [0002] A photodetector is a device that converts light signals into electrical signals by using the photoelectric effect of matter. Photodetectors are widely used in various fields of military and national economy, such as ray measurement and detection, industrial automatic control, photometry, regional environmental monitoring, etc., so the research on photodetectors is particularly important. [0003] Magnesium Nitride (Mg 3 N 2 ) is a typical metal nitride, which has many applications in industry. For example, it can be used as a catalyst for the preparation of various ceramic materials. It is a commonly used catalyst material for the preparation of cubic boron nitride, and it is also an ideal hydrogen storage material. In fact, Mg 3...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/108H01L31/0224H01L31/0216H01L31/032H01L31/18C23C14/06C23C14/18C23C14/35C23C14/58
CPCC23C14/0036C23C14/0617C23C14/0641C23C14/0647C23C14/185C23C14/35C23C14/5806H01L31/02161H01L31/022408H01L31/032H01L31/1085H01L31/18Y02P70/50
Inventor 陈占国李方野赵纪红刘秀环王帅陈曦侯丽新高延军
Owner JILIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap