Titanium silicon alloy target material and a manufacturing method thereof

A titanium-silicon alloy and target material technology, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve the problem of uneven distribution of hot-pressed target material density, difficulty in achieving large size, and easy production of ingots Cracking and other problems, to achieve the effect of improving coating hardness and oxidation resistance, improving quality, and wide size specifications

Active Publication Date: 2020-05-12
北京安泰六九新材料科技有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Titanium-silicon alloy is an intermetallic compound. The titanium-silicon target prepared by the existing smelting method has disadvantages such as alloy brittleness and composition segregation. The amount of silicon added generally does not exceed 15% of the weight, and the ingot with more than 15% silicon added is prone to cracking , less than 15% silicon addition is easy to produce composition segregation and brittle cracks, and the poor ductility of the alloy also makes it difficult to process hot and cold, so it is difficult to prepare titanium-silicon alloy targets by melting and casting
It is difficult to achieve large-scale production of targets produced by hot-pressing process, and at the same time, the internal density distribution of hot-pressed targets is uneven

Method used

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  • Titanium silicon alloy target material and a manufacturing method thereof
  • Titanium silicon alloy target material and a manufacturing method thereof
  • Titanium silicon alloy target material and a manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] The titanium-silicon alloy target provided in this embodiment is composed of the following atomic percentages: 85% titanium and 15% silicon.

[0037] The preparation method of the titanium-silicon target in this example comprises the following steps:

[0038] Step 1, according to the design requirements of the above target material components, weigh 82.64 parts by weight of titanium powder with an average particle size of 80 μm and a purity of 99.7%, TiSi 2 17.36 parts by weight of powder, mixed for 3h in a three-dimensional mixer, vacuumed for protection during the mixing process, and the vacuum degree was controlled at 10 -2 About Pa;

[0039] Step 2, put the mixed alloy powder into a cold isostatic pressing mold, and perform cold isostatic pressing treatment under a pressure of 50 MPa, and the holding time is 30 minutes;

[0040] Step 3: Put the blank after cold isostatic pressing into a metal sheath of appropriate size, and place the sheath in a degassing device f...

Embodiment 2

[0046] The titanium-silicon alloy target provided in this embodiment is composed of the following atomic percentages: 80% titanium and 20% silicon.

[0047] The preparation method of the titanium-silicon target in this example comprises the following steps:

[0048] Step 1, according to the design requirements of the above target material components, weigh 76.33 parts by weight of titanium powder with an average particle size of 80 μm and a purity of 99.7%, TiSi 2 23.67 parts by weight of powder, mixed in a three-dimensional mixer for 3 hours, vacuumed during the mixing process, and the vacuum degree was controlled at 10 -2 About Pa;

[0049] Step 2, put the mixed alloy powder into a cold isostatic pressing mold, and perform cold isostatic pressing treatment under a pressure of 50 MPa, and the holding time is 30 minutes;

[0050] Step 3: Put the blank after cold isostatic pressing into a metal sheath of appropriate size, and place the sheath in a degassing device for degassi...

Embodiment 3

[0056] The titanium-silicon alloy target provided in this embodiment is composed of the following atomic percentages: 75% titanium and 25% silicon.

[0057] The preparation method of the titanium-silicon target in this example comprises the following steps:

[0058] Step 1, according to the design requirements of the above target material components, weigh 69.74 parts by weight of titanium powder with an average particle size of 80 μm and a purity of 99.7%, TiSi 2 30.26 parts by weight of powder, mixed for 3h in a three-dimensional mixer, vacuumed during the mixing process, and the vacuum degree was controlled at 10 -2 About Pa;

[0059] Step 2, put the mixed alloy powder into a cold isostatic pressing mold, and perform cold isostatic pressing treatment under a pressure of 50 MPa, and the holding time is 30 minutes;

[0060] Step 3: Put the blank after cold isostatic pressing into a metal sheath of appropriate size, and place the sheath in a degassing device for degassing tr...

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Abstract

The invention discloses a titanium silicon alloy target material and a manufacturing method thereof, and belongs to the field of alloy target preparation. The method comprises the following steps of preparing alloy powder, and mixing a titanium source and a silicon source to prepare alloy powder; performing cold isostatic pressing on the alloy powder to obtain a pressed blank; degassing the pressed blank; and performing hot isostatic pressing on the degassed pressed black to obtain the titanium silicon alloy target material. The titanium silicon alloy target material has the advantages of highcompactness, high alloying degree, no pores and segregation, uniform structure, fine grains, etc. The relative density is higher than 99%, and the average grain size is not more than 100 micros.

Description

technical field [0001] The invention belongs to the technical field of powder metallurgy materials and their manufacture, and in particular relates to a titanium-silicon alloy target and a manufacturing method. Background technique [0002] With the development of hard coating materials, from the initial TiN and TiC to TiCN and TiAlN, how to improve the wear resistance and application temperature of the coating has become the main research direction. The TiSiN hard coating formed by injecting nitrogen gas during TiSi target sputtering forms a special nanocomposite structure of amorphous Si3N4 wrapped TiN, which significantly improves the hardness and oxidation resistance of the coating. The service temperature is 1100°C. Compared with TiCN and TiAlN, the anti-mechanical wear and anti-abrasive wear properties of the film layer and the application temperature are greatly improved. It provides more excellent high-temperature wear-resistant and anti-oxidation film materials for ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F3/04B22F3/15C22C1/05C22C1/10C22C14/00C23C14/34C23C14/35
CPCB22F3/04B22F3/15C22C1/05C22C14/00C23C14/3414C23C14/35
Inventor 张凤戈李建奎魏铁峰张欠男缪磊张学华岳万祥
Owner 北京安泰六九新材料科技有限公司
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