Preparation method of molybdenum-tungsten alloy sputtering target material

A molybdenum-tungsten alloy, sputtering target technology, applied in sputtering coating, metal material coating process, ion implantation coating and other directions, can solve problems such as rare reports, improve quality and facilitate industrialized mass production , the effect of easy densification

Inactive Publication Date: 2020-06-09
LUOYANG SIFON ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Molybdenum-tungsten alloy targets suitable for the production of magnetron sputtering coatings for flat panel displ

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] A method for preparing a molybdenum-tungsten alloy sputtering target, comprising the following steps:

[0023] Step 1. Take a certain proportion of molybdenum powder, tungsten powder, and tungsten trioxide powder, and carry out ball mill mixing under the protection of an argon or nitrogen atmosphere, and mix well;

[0024] Step 2: Put the material mixed uniformly in step 1 into rubber powder, and then perform cold isostatic pressing to obtain a green body;

[0025] Step 3, performing two-stage sintering on the green body obtained in step 2 under a hydrogen protective atmosphere to obtain a sintered green body;

[0026] Step 4. Heating the sintered compact obtained in Step 3 under the protection of hydrogen or argon, then hot rolling, leveling, and finally annealing under hydrogen or vacuum to obtain a molybdenum-tungsten alloy slab;

[0027] Step 5: Machining the molybdenum-tungsten alloy slab obtained in step 4 according to requirements such as grinding to obtain a mo...

Embodiment 2

[0036] Step 1. Add molybdenum powder, tungsten powder, and tungsten trioxide powder into the V-type mixer in proportions of 90 parts, 9 parts, and 1 part by mass respectively. The purity of molybdenum powder, tungsten powder, and tungsten trioxide powder is No less than 99.9%, and pass through a 200-mesh sieve; the mixer is fed with argon as a protective gas, and the machine is turned on and mixed for 18 hours and then shut down to obtain a mixed powder;

[0037] Step 2. According to the needs, choose a rubber sleeve with a suitable size, put the mixed powder obtained in step 1 into the rubber sleeve, and shake it while loading. After filling the powder, seal the rubber sleeve, and then shape the rubber sleeve. Keep the rubber sleeve in the shape of a cuboid; put the powdered rubber sleeve into a cold isostatic press for pressing, slowly increase the pressure until the maximum pressure reaches 200MPa, hold the pressure for 5 minutes, then release the pressure, and take out the ...

Embodiment 3

[0043] Step 1. Add a certain amount of molybdenum powder, tungsten powder, and tungsten trioxide powder into the V-type mixer in proportions of 90%, 8.5%, and 1.5% by mass respectively. Molybdenum powder, tungsten powder, and tungsten trioxide The purity of the powder is not less than 99.9%, and it passes through a 200-mesh sieve, and the mixer is fed with argon as a protective gas, and the machine is turned on and mixed for 24 hours and then shut down to obtain a mixed powder;

[0044] Step 2. According to the needs, choose a rubber sleeve with a suitable size, put the mixed powder obtained in step 1 into the rubber sleeve, and shake it while loading. After filling the powder, seal the rubber sleeve, and then shape the rubber sleeve. Keep the rubber sleeve in the shape of a cuboid; put the powdered rubber sleeve into a cold isostatic press for pressing, and increase the pressure slowly until the maximum pressure reaches 220MPa, and the holding time is 5 minutes. Afterwards, t...

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Abstract

The invention provides a preparation method of a molybdenum-tungsten alloy sputtering target material. The preparation method includes the following steps that step 1, a certain proportion of molybdenum powder, tungsten powder and tungsten trioxide powder are taken, ball milling and mixing are performed under a protective atmosphere, and the materials are mixed uniformly; step 2, the uniformly mixed materials are subjected to powder filling in a rubber sleeve, and then cold isostatic pressing forming is performed to obtain a blank body; step 3, the blank body is sintered in two stages under ahydrogen protective atmosphere to obtain a sintered blank; step 4, the sintered blank is heated under the protection of hydrogen or argon, then hot rolling and leveling are performed, and finally, annealing is performed under hydrogen or vacuum to obtain a molybdenum-tungsten alloy slab; and step 5, the molybdenum-tungsten alloy slab is subjected to grinding and other machining as required to obtain a molybdenum-tungsten alloy product. The preparation method is simple in preparation step, the purity and relative density of the prepared molybdenum-tungsten alloy sputtering target material bothmeet the usage requirements in the TFT-LCD display film-coating field, the production cost is low, the product size is wide, and industrial mass production is convenient.

Description

technical field [0001] The invention relates to the field of preparation of high-temperature refractory metal targets, in particular to a method for preparing molybdenum-tungsten alloy sputtering targets. Background technique [0002] In the production process of G8.5 and above high-generation TFT-LCD (Thin Film Field Effect Transistor Liquid Crystal Display), copper is often used as the signal transmission layer. However, copper has the problem of silicon diffusion, and a barrier layer needs to be deposited to prevent copper and silicon. diffusion. Molybdenum and molybdenum alloy materials have good barrier properties, so they are widely used. Compared with pure molybdenum, molybdenum-tungsten alloy has better thermal stability and etching performance, and is a very potentially valuable barrier material. [0003] For the preparation of metal layer thin films, magnetron sputtering is a better production method in terms of film quality and production efficiency, and molybde...

Claims

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Application Information

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IPC IPC(8): C23C14/34C22C1/05C22C27/04
CPCC22C1/05C22C27/04C23C14/3414
Inventor 方宏孙虎民张雪凤
Owner LUOYANG SIFON ELECTRONICS
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