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Non-layered two-dimensional PbSe crystal material and preparation method thereof

A crystalline material, non-layered technology, applied in the field of non-layered two-dimensional PbSe crystal material and its preparation, can solve the problems of low yield, weak interlayer bonding force, difficult integration of silicon-based substrates, etc. Evaporation time, avoidance of insufficient reaction, effect of slowing down the evaporation rate

Active Publication Date: 2020-06-19
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Mechanical exfoliation is an effective method to quickly obtain two-dimensional materials, but this method is only suitable for materials with weak interlayer bonding, and the yield is low and the randomness is large
In addition, in the wet chemical synthesis method, due to the liquid environment, the product size is small, the surface quality is poor, and it is difficult to achieve integration on silicon-based substrates.

Method used

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  • Non-layered two-dimensional PbSe crystal material and preparation method thereof
  • Non-layered two-dimensional PbSe crystal material and preparation method thereof
  • Non-layered two-dimensional PbSe crystal material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] A horizontal tube furnace with a single temperature zone is used as the reactor. The tube length of the horizontal tube furnace is 90cm, the outer diameter is 25mm, the tube wall thickness is 2mm, the range of the constant temperature zone is 10cm, the temperature in the central temperature zone is set to 650°C, and the heating rate is 30°C / min. Use Se powder (purity>99.99%) as the selenium source to place in the upstream area; Pb 3 o 4Powder (purity>99.99%) is used as the lead source, KCl is added to obtain the precursor, and molecular sieves are placed on the precursor at the same time, and placed in the central temperature zone; the mica substrate is placed in the downstream area to collect the product. Before the reaction, pre-evacuate to about 10Pa, then fill with 600sccm of Ar to atmospheric pressure, and repeatedly wash the gas 3 times to eliminate residual oxygen; 2 As the reaction gas, the pressure is maintained at one atmospheric pressure, the reaction time...

Embodiment 2

[0043] A horizontal tube furnace with a single temperature zone is used as the reactor. The tube length of the horizontal tube furnace is 90cm, the outer diameter is 25mm, the tube wall thickness is 2mm, the range of the constant temperature zone is 10cm, the temperature in the central temperature zone is set to 700°C, and the heating rate is 30°C / min. Use Se powder (purity>99.99%) as the selenium source to place in the upstream area; Pb 3 o 4 Powder (purity>99.99%) is used as the lead source, KCl is added to obtain the precursor, and molecular sieves are placed on the precursor at the same time, and placed in the central temperature zone; the mica substrate is placed in the downstream area to collect the product. Before the reaction, pre-evacuate to about 10Pa, then fill it with 600sccm Ar to atmospheric pressure, and repeatedly wash the gas 3 times to eliminate residual oxygen; 2 As the reaction gas, the pressure is maintained at one atmospheric pressure, the reaction tim...

Embodiment 3

[0045] A horizontal tube furnace with a single temperature zone is used as the reactor. The tube length of the horizontal tube furnace is 90cm, the outer diameter is 25mm, the tube wall thickness is 2mm, the range of the constant temperature zone is 10cm, the temperature in the central temperature zone is set to 650°C, and the heating rate is 30°C / min. Use Se powder (purity>99.99%) as the selenium source to place in the upstream area; Pb 3 o 4 Powder (purity>99.99%) is used as the lead source, KCl is added to obtain the precursor, and molecular sieves are placed on the precursor at the same time, and placed in the central temperature zone; the mica substrate is placed in the downstream area to collect the product. Before the reaction, pre-evacuate to about 10Pa, then fill with 600sccm of Ar to atmospheric pressure, and repeatedly wash the gas 3 times to eliminate residual oxygen; 2 As a reaction gas, the pressure is maintained at one atmospheric pressure, the reaction time ...

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Abstract

The invention belongs to the field of nanometer semiconductor materials, and discloses a non-layered two-dimensional PbSe crystal material and a preparation method thereof. The preparation method comprises the following steps: (a) selecting a reaction container, marking the reaction container as an upstream region, a central region and a downstream region, selecting Se powder as a selenium source,and placing the Se powder in the upstream region; (b) selecting Pb3O4 as a lead source, mixing the Pb3O4 with potassium chloride so as to obtain a precursor, then placing the precursor in the centralregion, and selecting mica as a growth substrate to be placed in the downstream region; and (c) introducing argon into the reaction container as carrier gas, introducing hydrogen as reaction gas, andcarrying out a reaction under heating so as to obtain the non-layered two-dimensional PbSe crystal material on the mica substrate. The invention also discloses a product prepared by using the method.The method provided by the invention meets the preparation requirements of large-batch two-dimensional nanometer PbSe crystal materials; a product crystal has the advantages of smooth and clean surface, uniform morphology, uniform element distribution, rich and cheap raw materials, simple preparation, and convenience in popularization and large-scale production.

Description

technical field [0001] The invention belongs to the technical field related to nano-semiconductor materials, and more specifically relates to a non-layered two-dimensional PbSe crystal material and a preparation method thereof. Background technique [0002] Since graphene was first obtained by mechanical exfoliation in 2004, two-dimensional materials represented by graphene have attracted extensive attention of researchers. So far, in addition to graphene, a large number of two-dimensional nanomaterials have been prepared by scientific researchers, such as transition metal sulfur compounds, layered metal oxides, and transition metal carbides. Due to the ultra-high specific surface area and strong quantum confinement of electrons in two dimensions, these two-dimensional nanomaterials exhibit many unconventional physical, optical, chemical and electronic properties, and are widely used in electronic devices such as catalysis, energy storage and conversion, sensing, Fields suc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B25/00
CPCC30B25/00C30B29/46
Inventor 周兴张逊翟天佑
Owner HUAZHONG UNIV OF SCI & TECH
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