Composite binder grinding wheel for silicon carbide crystal thinning, preparation method and application

Abstract

The invention provides a composite binder grinding wheel for silicon carbide crystal thinning, a preparation method and an application. The composite binder grinding wheel is prepared from the following raw materials of, by weight, 15%-45% of diamond abrasive, 15%-60% of pre-alloyed powder, 20%-45% of polytetrafluoroethylene, 3%-15% of cerium oxide and 0.5%-6% of a wetting agent. According to thecomposite binder grinding wheel for silicon carbide crystal thinning, the preparation method and the application, an alloy system used is Ga-Cu-Sn, the low-melting-point element of gallium is added into the alloy system, so that the forming temperature of the alloy powder is low, and the problem of heterogeneous forming of a resin metal binding agent is solved. Gallium metal is added to generate eutectic reaction to generate phases beta and delta with high gallium content and high brittleness, so that the conversion of a traditional alloy system from hard toughness to high brittleness is realized, and the self-sharpening property of a binding agent system is improved. The composite binding agent has the advantages of the metal binding agent and the advantages of a resin bonding agent, themetal binding agent forms a framework to improve strength and hardness, the resin powder increases elasticity of a grinding tool, impact resistance in the grinding process is reduced, and the surfacequality of a silicon carbide sheet is improved.

Description

technical field [0001] The invention relates to the field of superhard abrasives, in particular to a composite bond grinding wheel for silicon carbide crystal thinning, a preparation method and application. Background technique [0002] Wide-bandgap semiconductor materials represented by silicon carbide have outstanding advantages such as higher saturation drift speed and higher critical breakdown voltage, and are suitable for high-power, high-temperature, high-frequency and radiation-resistant applications. Countries around the world attach great importance to the research of SiC, and have invested a lot of manpower and material resources in active development. The United States, Europe, Japan, etc. have not only formulated corresponding research plans at the national level, but also some international electronics giants have also invested heavily in the development of SiC. Semiconductor device. [0003] Different from the low hardness and high brittleness of the first-gen...

AI Technical Summary

Problems solved by technology

Commonly used resin bonded grinding wheels, due to the low strength of the resin material, the grinding wheel is prone to chipping during grinding, and the workpiece allowance cannot be removed; commonly used metal bonded grinding wheels, due to the toughness of the metal, the bond cannot be self-consumed when processing silicon carbide, and the edge will continue to emerge The effect is poor, there is no self-sharpening, and it is easy to cause grinding wheel clogging, workpiece burns, slivers and other problems during grinding, and it is impossible to obtain high-quality processing quality