Method for improving molybdenum disulfide gas sensor by adopting niobium and sensing equipment
A gas sensor and molybdenum disulfide technology, applied in the field of sensors, can solve the problems of hindering the practical application of molybdenum disulfide gas sensor, slow response/recovery time, difficult desorption of gas molecules, etc., achieving convenient and fast assembly, less recovery time, The effect of speeding up the reaction time
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[0082] method one
[0083] A method for improving molybdenum disulfide gas sensor by adopting niobium, comprising the following steps:
[0084] Prepare 300μm-500μm silicon as the substrate;
[0085] Prepare 200μm-300μm silicon dioxide as a dielectric layer on the substrate by chemical deposition method;
[0086] Take by weighing 0.08g sulfur powder and 0.02g molybdenum trioxide and niobium chloride mix together, be dissolved in deionized water, and use magnetic stirring to make it mix;
[0087] Add hydrochloric acid dropwise to adjust the pH to 5-6; let stand for 0.5-1h, and centrifuge to obtain sediment;
[0088] Sediment is washed with absolute ethanol;
[0089] Put the sediment into the quartz boat;
[0090] Cover the dielectric layer above the quartz boat;
[0091] Put the quartz boat into the single-temperature furnace, under the protection of hydrogen gas, set the parameters for heating, the heating temperature is 650°C, the heating time is 30 minutes, and the heat ...
Embodiment
[0117] refer to figure 1 , the present embodiment provides a method for improving molybdenum disulfide gas sensor by using niobium, comprising the following steps:
[0118] S100. preparing a substrate;
[0119] S200. Preparing a dielectric layer on the substrate by chemical deposition method;
[0120] S300. Pretreating sulfur powder, molybdenum trioxide and niobium chloride, preparing a niobium-doped molybdenum disulfide layer on the dielectric layer;
[0121] S400. Preparing interdigitated electrodes on the molybdenum disulfide layer doped with niobium;
[0122] S500. The interdigitated electrodes are connected to external pins.
[0123]Wherein, the substrate can be made of silicon (Si), ceramics, etc., the dielectric layer can be made of silicon dioxide, aluminum oxide, etc., and the interdigitated electrodes can be made of gold (Au), platinum (Pt), silver (Ag), etc. The external pins may be copper, aluminum and the like.
[0124] Using the above scheme, the molybdenum ...
Embodiment 4
[0154] refer to Figure 3-Figure 6 , the present embodiment provides a sensing device, including a box body 1 and a sensor 2 prepared by the above-mentioned method of improving molybdenum disulfide gas sensor by using niobium, and the sensor 2 is arranged in the box body 1.
[0155] With the above solution, the molybdenum disulfide layer is optimized with niobium in the sensor 2 to improve the reaction strength of the sensor 2 and reduce the recovery time, and the box body 1 protects the sensor 2 .
[0156] In a preferred implementation of this embodiment, the sensor 2 includes a substrate 21, a dielectric layer 22, and an interdigitated electrode 24 and an interdigitated electrode formed by using niobium-improved molybdenum disulfide layer 23, which are arranged in sequence from bottom to top. structure.
[0157] By adopting the above solution, the molybdenum disulfide layer is optimized by using niobium in the sensor 2 to increase the reaction strength of the sensor 2 and r...
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