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Vertical double-heterojunction optical detector area array and manufacturing method thereof

A double heterojunction and photodetector technology, which is applied in the direction of electric solid-state devices, semiconductor devices, radiation control devices, etc. To achieve good semiconductor compatibility and system integration, improve photoresponsivity and response time, and high signal-to-noise ratio of area arrays

Active Publication Date: 2020-09-08
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] At present, the existing semiconductor photodetectors cannot cover the ultra-wide-spectrum photodetection in the infrared-visible-ultraviolet band, and cannot obtain large-area, high-resolution, real-time dynamic photodetection imaging.

Method used

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  • Vertical double-heterojunction optical detector area array and manufacturing method thereof
  • Vertical double-heterojunction optical detector area array and manufacturing method thereof
  • Vertical double-heterojunction optical detector area array and manufacturing method thereof

Examples

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no. 1 example

[0045] see figure 1, this embodiment provides a vertical double heterojunction photodetector array, the vertical double heterojunction photodetector array includes a transparent substrate L1, a lower ohmic contact layer L2 is arranged on the transparent substrate L1, and the lower ohmic contact layer A plurality of cylindrical double heterojunction detector units are arranged on L2, and the plurality of cylindrical double heterojunction detector units are arranged in an orderly manner on the lower ohmic contact layer L2 to form a cylindrical double heterojunction detector array;

[0046] Each cylindrical double heterojunction detector unit includes a lower light absorption layer L3, a middle light absorption layer L4, an upper light absorption layer L5 and an upper ohmic contact layer L6; a common electrode is arranged on the lower ohmic contact layer L2, and each Upper electrodes P2 are respectively disposed on the upper ohmic contact layer L6 , and a plurality of upper elect...

no. 2 example

[0057] see figure 2 , the present embodiment provides a method for manufacturing the above-mentioned vertical double heterojunction photodetector array, the method includes the following steps:

[0058] S1, sequentially preparing the lower ohmic contact layer L2 on the transparent substrate L1;

[0059] see figure 1 , the above steps specifically include: metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), chemical vapor deposition (CVD), atomic layer deposition (ALD) or magnetron sputtering (Magnetronsputtering) on ​​the transparent substrate L1 The method prepares the lower ohmic contact layer L2.

[0060] S2, making the lower light absorbing layer L3, the middle light absorbing layer L4 and the upper light absorbing layer L5 on the lower ohmic contact layer L2;

[0061] see figure 1 The above-mentioned lower light absorbing layer L3, middle light absorbing layer L4, and upper light absorbing layer L5 are manufactured by top-down mechanical tr...

no. 3 example

[0074] see image 3 , this embodiment provides a vertical GaN / MoS 2 A method for manufacturing a GaN double heterojunction photodetector array, the manufacturing method comprising:

[0075] (a) Sequential epitaxial growth of 1 μm thick n-type Al on double-polished c-plane sapphire substrates by MOCVD 0.1 Ga 0.9 N film (doped with Si, n-type doping concentration is 3*10 18 / cm 3 );

[0076] (b) Using MOCVD epitaxial technology, sequentially epitaxially grow 0.2 μm thick non-doped GaN film; 2 S as a source of sulfur gas, Mo(CO) 6 As molybdenum gas source, two-dimensional MoS growth 2 Single layer material; then grow 0.1μm thick non-doped GaN film;

[0077] (c) A 0.1 μm thick p-type GaN film (doped with Mg, p-type doping concentration of 1*10 18 / cm 3 );

[0078] (d) Using ultraviolet lithography, a circular lattice pattern is fabricated on the surface of the p-type GaN thin film, the diameter of a single circle is 5 μm, and the period is 10 μm. Then use electron beam...

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Abstract

The invention provides a vertical double-heterojunction optical detector area array and a manufacturing method thereof. The vertical double-heterojunction optical detector area array comprises a transparent substrate, a lower ohmic contact layer is arranged on the transparent substrate, a plurality of cylindrical double-heterojunction detector units are arranged on the lower ohmic contact layer, and the plurality of cylindrical double-heterojunction detector units are orderly arranged on the lower ohmic contact layer to form a cylindrical double-heterojunction detector array; each cylindricaldouble-heterojunction detector unit comprises a lower light absorption layer, a middle light absorption layer, an upper light absorption layer and an upper ohmic contact layer which are arranged frombottom to top; a common electrode is arranged on the lower ohmic contact layer, an upper electrode is arranged on each upper ohmic contact layer, and the plurality of upper electrodes form an upper electrode array. According to the invention, ultra-wide spectrum optical detection covering an infrared-visible-ultraviolet waveband can be realized, large-area, high-resolution, real-time and dynamic optical detection imaging can be realized, the optical responsivity is high, the response time is short, and the dark current is extremely low.

Description

technical field [0001] The invention relates to the technical field of semiconductor photodetection, in particular to a vertical double heterojunction photodetector array and a manufacturing method thereof. Background technique [0002] Semiconductor photodetectors are detectors made of photoconductive, photovoltaic and photothermal effects caused by the absorption of light by semiconductors, and are widely used in various fields of military and national economy. Due to its small size, light weight, fast response, high sensitivity, and easy integration with other semiconductor devices, it is an ideal photodetector that can be widely used in optical communication, signal processing, sensing systems and measurement systems. From the first generation of Si materials, the second generation of III-V compound semiconductors (GaAs, InP, etc.) to the third generation of wide bandgap semiconductor materials (represented by GaN and SiC), semiconductor materials have experienced rapid ...

Claims

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Application Information

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IPC IPC(8): H01L27/146H01L31/11
CPCH01L27/14607H01L27/14632H01L27/14643H01L27/14687H01L27/14692H01L31/11
Inventor 彭铭曾郑新和卫会云
Owner UNIV OF SCI & TECH BEIJING
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