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A device and method for preparing n-type doped diamond by microwave plasma-hot filament compound chemical vapor deposition

A microwave plasma and chemical vapor deposition technology, applied in chemical instruments and methods, from chemically reactive gases, gaseous chemical plating, etc., can solve problems such as affecting the temperature uniformity of the substrate, reducing the quality of diamond, and reducing the electrical conductivity. , to achieve the effect of improving preparation efficiency and preparation quality, reducing surface temperature, and convenient disassembly and cleaning

Active Publication Date: 2022-06-17
SHENZHEN RES INST OF WUHAN UNIVERISTY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Generally, MPCVD has the advantages of high plasma density, no discharge electrode pollution, and good controllability, but its temperature control performance is slightly inferior to that of HFCVD.
And its common substrate cooling method will also affect the substrate temperature uniformity, thereby reducing the diamond quality
At the same time, the hydrogen element in n-type doped diamond will also combine with phosphorus element in the form of phosphorus-hydrogen bond, which will passivate the impurities in the diamond and reduce the conductivity

Method used

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  • A device and method for preparing n-type doped diamond by microwave plasma-hot filament compound chemical vapor deposition
  • A device and method for preparing n-type doped diamond by microwave plasma-hot filament compound chemical vapor deposition
  • A device and method for preparing n-type doped diamond by microwave plasma-hot filament compound chemical vapor deposition

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Experimental program
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Effect test

Embodiment 1

[0039]A device for preparing n-type doped diamond by microwave plasma-hot filament composite chemical vapor deposition includes a microwave plasma source system, a hot filament reaction chamber improvement system, a vacuum pumping system and a tail gas treatment system. The microwave plasma source system includes a microwave source 1 , an impedance matching element, a waveguide mode converter, an antenna unit 3 , a waveguide 4 and a quartz window 5 .

[0040] Further, the above-mentioned device for preparing n-type doped diamond by microwave plasma-hot filament composite chemical vapor deposition, the hot filament reaction chamber improvement system includes a resonant cavity 6, an air inlet 7, a deposition table 10, and an inert gas air hole 9. , water cooling channel 11, lining 12, hot filament 13, heat insulation layer and air outlet 16, the upper end of the side wall of the resonant cavity 6 has an air inlet 7, and the lower end of the side wall has an air outlet 16, the de...

Embodiment 2

[0042] Based on Example 1, Example 2 further optimizes and defines the above-mentioned device for preparing n-type doped diamond by microwave plasma-hot filament composite chemical vapor deposition.

[0043] Further, the above-mentioned device for preparing n-type doped diamond by microwave plasma-hot filament composite chemical vapor deposition also includes a partition cooling pipeline 15, which is communicated with the water cooling channel 11 and is connected to the deposition table 10. On the back side, the deposition table 10 is cooled, and the speed of water in and out can be adjusted by different zone cooling pipes 15 .

Embodiment 3

[0045] Based on the above embodiments, Embodiment 3 enumerates multiple preferred technical features, and Embodiment 1 or Embodiment 2 can select one or more matching technical features to be combined to form multiple new and different technical solutions.

[0046] Preferably, in the above-mentioned device for preparing n-type doped diamond by microwave plasma-hot filament composite chemical vapor deposition, a sealing ring is used for sealing between the quartz window 5 and the resonant cavity 6 .

[0047] Preferably, in the above-mentioned device for preparing n-type doped diamond by microwave plasma-hot filament composite chemical vapor deposition, the sealing ring is an O-Ring fluororubber ring.

[0048] Preferably, in the above-mentioned device for preparing n-type doped diamond by microwave plasma-hot filament composite chemical vapor deposition, the lining 12 is a graphite lining 12 with a silicon carbide coating.

[0049] Preferably, in the above-mentioned device for p...

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Abstract

The invention provides a device and method for preparing n-type doped diamond by microwave plasma-hot filament composite chemical vapor deposition. The device includes a microwave plasma source system, a hot filament reaction chamber improvement system, a vacuum pumping system and a tail gas treatment system. The microwave plasma source system includes a microwave source, a three-screw impedance adjuster, a waveguide mode converter, an antenna unit, a waveguide, and a quartz window. The waveguide mode converter is connected to the microwave source through a three-screw adapter. The improved system of hot filament reaction chamber includes resonant cavity, gas inlet, deposition table, plasma, inert gas hole, water cooling channel, graphite lining, hot filament, mirror plate, partitioned cooling pipeline and gas outlet. The waveguide is connected to the resonant cavity through a quartz window. The invention combines MPCVD and HFCVD devices, uses a microwave source as a reaction heat source, a hot filament as an annealing heat source, cooperates with a graphite lining to maintain annealing temperature, and improves the preparation efficiency and quality of n-type doped diamond.

Description

technical field [0001] The invention belongs to the technical field of single crystal diamond film growth, in particular to a device and a method for preparing n-type doped diamond by microwave plasma-hot wire composite chemical vapor deposition. Background technique [0002] Diamond film has high hardness, high strength, good thermal conductivity, small thermal expansion coefficient, excellent optical properties, high chemical stability, strong radiation resistance, fast sound propagation, good dielectric properties, wide transmission band, and forbidden band width. It has the advantages of large and small dielectric coefficient. Therefore, it has a wide range of applications in the fields of high-power semiconductor devices, high-power microwave windows, and infrared optical window materials. Among them, n-type diamond has higher carrier mobility and can realize n-type conduction at room temperature, which is also the key to the development of bipolar devices. Phosphorus...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/27C23C16/511C30B29/04C30B25/00
CPCC23C16/271C23C16/274C23C16/278C23C16/511C30B29/04C30B25/00
Inventor 李辉刘胜王浩丞于大洋张磊申胜男聂思媛
Owner SHENZHEN RES INST OF WUHAN UNIVERISTY
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