Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Cerium-yttrium abrasive material for CMP and preparation method thereof

A grinding material, cerium yttrium technology, applied in the field of preparation of cerium oxide grinding material, to achieve the effect of high grinding efficiency, good dispersion and high purity

Pending Publication Date: 2020-12-11
BAOTOU TIANJIAO SEIMI POLISHING POWDER CO LTD
View PDF9 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] The hydrothermal method is one of the important methods for the synthesis of nanomaterials. At present, there is a lack of a technology for directly synthesizing cerium oxide nanomaterials by the hydrothermal method.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cerium-yttrium abrasive material for CMP and preparation method thereof
  • Cerium-yttrium abrasive material for CMP and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0033] The preparation method of cerium yttrium grinding material for CMP, concrete steps are as follows:

[0034] Step 1: dissolving the soluble salts of cerium and yttrium respectively, and mixing them to obtain a mixed solution of cerium and yttrium, and adopting a homogeneous co-precipitation method to obtain cerium and yttrium hydroxide;

[0035] In this preferred embodiment, nitrates of cerium and yttrium are selected for use. Soluble salts are selected from nitrates, chlorides, sulfates, acetates, and citrates. The precipitating agent is selected: urea or ammonia water, or a combination of the two.

[0036] The homogeneous co-precipitation method adopts the following two methods, as follows:

[0037] (1), the cerium nitrate (Y 2 o 3 / TREO (total rare earth oxides) ≥ 99.999%), yttrium nitrate (CeO 2 / TREO (total amount of rare earth oxides) ≥ 99.99%) are dissolved respectively, and the molar ratio of the two solutions is Y 2 o 3 : CeO 2 =0.5~1:5.9~7 set ratio mix...

Embodiment 1

[0056] Configure REO=100g / L solution Y (NO 3 ) 3 , Ce(NO 3 ) 3 solution, (Y 2 o 3 / TREO=99.999%, CeO 2 / TREO=99.98%). Take 4000ml Ce(NO 3 ) 3 solution, adding ammonia water (6%, wt%) to adjust the pH=3 of the solution. Mole ratio is Y 2 o 3 : CeO 2 =1:5.9 ratio will 42mlY(NO 3 ) 3 Added to Ce(NO 3 ) 3 In the solution, the mixed liquid is recorded as liquid α (yttrium cerium mixed nitric acid solution).

[0057] In a constant temperature water bath at 80°C, add 450g of urea into a beaker filled with 5000ml of deionized water, add 8g of polyethylene glycol (PEG-400), and 5g of ammonium polyacrylate, which is the precipitant β.

[0058] Drop the precipitant β into the liquid α at a rate of 50ml / min, and filter the precipitate after the reaction is completed.

[0059] Add 2000ml of deionized water to the precipitate for washing, add 200ml of ammonia water (5mol / L), add 170g of H 2 o 2 Solution (30%, wt%) oxidizes low-valent cerium in cerium hydroxide yttrium to ...

Embodiment 2

[0061] The raw materials used are the same as in Example 1.

[0062] Add 12g of polyethylene glycol (PEG-400) and heat to 50°C. Prepare 2000ml of 10% ammonia solution, and drop the ammonia solution into the raw material solution while stirring at a constant temperature. Cool to 20°C, add 170g H 2 o 2 Solution (30%, wt%) oxidizes low-valent cerium in cerium hydroxide yttrium to high-valent cerium, stirs for 20 minutes, heats to 95° C. and boils for 30 minutes. Filter and wash twice with 2000ml deionized water. Suction filtration, put the filter cake into a high-pressure reactor, pressurize hydrothermal reaction with 150Kg pressure for 6 hours, and obtain the oxides of cerium and yttrium as products.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
surface roughnessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a cerium-yttrium abrasive material for CMP (chemical mechanical polishing) and a preparation method thereof. The preparation method includes the steps that soluble salt of cerium and soluble salt of yttrium are dissolved respectively and mixed to obtain a yttrium-cerium mixed solution, and yttrium cerium hydroxide is prepared through a homogeneous coprecipitation method; and low-valence cerium in yttrium cerium hydroxide is oxidizedinto high-valence cerium, reactants are filtered, a filter cake is put into a high-pressure reaction kettle, and hydrothermal reaction is carried out to obtain an oxide of cerium and yttrium serving as the cerium-yttrium abrasive material. The cerium-yttrium polishing slurry prepared through the method is high in purity, good in dispersity, uniform in particle and high in grinding efficiency, and the content of metal sodium ions is smaller than 0.5 ppm.

Description

technical field [0001] The invention relates to a preparation technology of yttrium-doped cerium oxide abrasive material, in particular to a cerium yttrium abrasive material for CMP and a preparation method thereof. Background technique [0002] CMP chemical mechanical polishing (Chemical Mechanical Planarization) technology is an essential process in the manufacturing process of large-scale integrated circuits. Widely used in the planarization of inter-level dielectric, shallow trench isolation, polysilicon, metal, dual damascence, etc. Polishing materials are essential consumables in the CMP process. CMP is mainly used in the polishing of single crystal silicon wafers and dielectric layer polishing in integrated circuits. Integrated circuit manufacturing requires a series of physical and chemical operations on single crystal silicon wafers. , the production process is very complicated. In this complex process, CMP technology will be used many times in the manufacture of m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01F17/218C01F17/206C01F17/10
CPCC01F17/218C01F17/206C01F17/10C01P2002/72C01P2006/80C09G1/02
Inventor 周薇赵延刘露涛程磊杜悦王泽门宇剑黄绍东杨国胜张存瑞
Owner BAOTOU TIANJIAO SEIMI POLISHING POWDER CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products