Polishing method for indium antimonide single crystal wafer

Abstract

The invention discloses a polishing method for an indium antimonide single crystal wafer. The polishing method is divided into two steps of laser polishing and then chemical mechanical polishing. Dueto the fact that the two-step polishing method is adopted, the common grinding process after traditional single crystal wafer cutting and before polishing is omitted, and the polishing efficiency is improved. By utilizing the characteristics of non-contact processing and low-damage processing of laser polishing, the surface of a single crystal wafer before chemical mechanical polishing reaches a micron-scale polishing level, and scratches remained after grinding do not exist, so that the subsequent chemical mechanical polishing process does not need to reach a very high thickness removal amount, the chemical mechanical polishing time is greatly shortened. The minimum time of the laser polishing process can be shortened to 10 minutes, and the overall polishing time can be controlled within30 minutes in cooperation with chemical mechanical polishing. And after the indium antimonide single crystal wafer is polished through chemical mechanical polishing, global planarization of the surface of the wafer is achieved, and the surface roughness Ra is smaller than 0.3 nm.

Description

technical field [0001] The invention relates to semiconductor material processing technology, in particular to a polishing method for indium antimonide single wafer. Background technique [0002] Among III-V semiconductors, indium antimonide has the narrowest band gap, the highest electron mobility, the smallest electron effective mass and the largest electron magnetic moment, making it a qualified infrared detection material, and can be used at high speed and low Power field effect transistors and ultra-high-speed low-power digital logic circuits have great application potential. [0003] Before application, indium antimonide single crystal needs to be diced to regularize the single crystal into a single wafer, then polished to remove the traces left by the single crystal dicing, and finally polished to achieve a global planar surface to meet the use requirements. Indium antimonide single crystal is a soft and brittle material. The traditional grinding process tends to lea...

AI Technical Summary

Problems solved by technology

Indium antimonide single crystal is a soft and brittle material. The traditional grinding process tends to leave deep scratches on the wafer surface. If it is not removed after the polishing process, it will affect the performance of the single wafer, which increases the polishing process to a certain extent. The thickness removal amount of the process affects the processing efficiency

At present, there are not many studies on the polishing method of indium antimonide single wafer. The chemical mechanical polishing (CMP) process commonly used in semiconductor processing is applied, and the quality of the polished wafer is not good.