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Double-particle-size non-spherical silicon dioxide, preparation method and polishing slurry prepared from double-particle-size non-spherical silicon dioxide

A silicon dioxide, aspheric technology, applied in the direction of silicon dioxide, silicon oxide, chemical instruments and methods, etc., can solve the problems of low polishing rate, low polishing efficiency, surface scratches of hard bottom materials, etc., to reduce micro-roughness. degree of polishing, improved polishing efficiency, mild conditions

Pending Publication Date: 2021-02-23
郑州中科新兴产业技术研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the polishing process, small particle size silica is easy to produce gel, and the polishing rate for hard bottom materials is low
In order to increase the polishing rate, companies such as Cabot and Rodel use large-size silica abrasives to enhance the mechanical grinding effect, thereby solving the problem of low polishing efficiency, but inevitably causing surface scratches and particle residues.

Method used

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  • Double-particle-size non-spherical silicon dioxide, preparation method and polishing slurry prepared from double-particle-size non-spherical silicon dioxide
  • Double-particle-size non-spherical silicon dioxide, preparation method and polishing slurry prepared from double-particle-size non-spherical silicon dioxide
  • Double-particle-size non-spherical silicon dioxide, preparation method and polishing slurry prepared from double-particle-size non-spherical silicon dioxide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] A method for preparing double particle diameter non-spherical silica, the steps are:

[0033] 1) Mix 3.5mL ammonia water, 9.2mL water, 87.5mL absolute ethanol and 20ppm zinc acetate;

[0034] 2) Quickly add 5 g of tetraethyl orthosilicate to the mixture in step 1) at room temperature, stir vigorously for 30 minutes, then gently stir, and the reaction time reaches 16 hours;

[0035] 3) After the reaction, centrifuge the reaction, wash with ethanol and water three times, and dry it in vacuum.

[0036] The above-mentioned alkaline double particle size non-spherical silicon dioxide chemical mechanical polishing slurry for the GSI barrier layer comprises the following steps:

[0037]a) Mix 2 parts of dumbbell-like double particle size silica abrasive, 0.5 parts of glycerin, 1.5 parts of fatty alcohol polyoxyethylene ether and water, and adjust the pH to about 11 with ammonium hydroxide to obtain the first mixture water dispersion;

[0038] b) Mix 1.5 parts of tartaric aci...

Embodiment 2

[0041] A method for preparing double particle diameter non-spherical silica, the steps are:

[0042] 1) Mix 3.5mL ammonia water, 31mL water, 65.7mL absolute ethanol and 80ppm zinc acetate;

[0043] 2) Quickly add 5 g of tetraethyl orthosilicate into the mixture in step 1) at room temperature, stir vigorously for 10 minutes, then gently stir, and the reaction time reaches 16 hours.

[0044] 3) After the reaction, centrifuge the reaction, wash with ethanol and water three times, and dry it in vacuum.

[0045] The above-mentioned alkaline double particle size non-spherical silica chemical mechanical polishing slurry for GSI barrier layer, the steps are: a) 5 parts of double particle size non-spherical silica abrasive, 1.5 parts of poly Vinyl alcohol, 0.1 part of glyceride, 1.5 parts of sodium lauryl sulfate and water are mixed evenly, and the pH is adjusted to about 11 with ammonium hydroxide to obtain the first mixed aqueous dispersion;

[0046] b) Mix 0.5 parts of tartaric ac...

Embodiment 3

[0049] In this case, the double particle size non-spherical silica obtained in Example 1 was used as the abrasive.

[0050] The above-mentioned alkaline double particle size non-spherical silicon dioxide chemical mechanical polishing slurry for the GSI barrier layer comprises the following steps:

[0051] a) 10 parts of double particle size non-spherical silica abrasive, 0.25 parts of glycerin, 1.75 parts of polyethylene glycol, 0.5 parts of fatty alcohol polyoxyethylene ether, 0.5 parts of fatty alcohol polyoxyethylene alkanolamide Mix with water evenly, and adjust the pH to about 8.5 with ammonium hydroxide to obtain the first mixed water dispersion;

[0052] b) Mix 2 parts of citric acid, 0.5 parts of acetic acid, 0.5 parts of urea hydrogen peroxide, 0.75 parts of dodecylamine and 0.2 parts of benzimidazole film forming agent, and adjust the pH to about 8.5 with ammonium hydroxide , to obtain the second mixed aqueous dispersion;

[0053] c) Add the same mass of the first ...

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Abstract

The invention provides double-particle-size non-spherical silicon dioxide, a preparation method and polishing slurry prepared from the double-particle-size non-spherical silicon dioxide. In a water-alcohol system, tetraethyl orthosilicate (TEOS) is used as a silicon source, ammonia water is used as a catalyst, metal salt is used as a morphology and particle size control agent, and the double-particle-size non-spherical silicon dioxide is prepared through hydrolysis, nucleation and growth. According to the alkaline double-particle-size non-spherical silicon dioxide chemical mechanical polishingslurry provided by the invention, abrasive particles with large and small particle sizes can achieve a synergistic effect (large micropores or grooves in a polishing pad are filled with large-particle-size abrasives, and small micropores or grooves in the polishing pad are filled with small-particle-size abrasives) in the polishing process; therefore, the flow and distribution of the polishing solution on the surface of a polishing pad are optimized, the polishing efficiency is improved, the micro-roughness of the polished surface is reduced, the thickness of a damaged layer is reduced, and apotential technical route is provided.

Description

technical field [0001] The invention relates to the technical field of preparation of chemical mechanical polishing liquid, in particular to a double particle diameter non-spherical silicon dioxide, a preparation method and the prepared polishing slurry. Background technique [0002] In recent years, semiconductor devices are highly integrated and high-speed, the design size is gradually reduced, and multi-layer wiring has become an inevitable trend. The key issue of multi-layer wiring planarization technology has attracted special attention. Although there are many planarization techniques, chemical mechanical polishing (CMP) has been proven to be the best and only technique capable of achieving global planarization. [0003] Polishing fluid is the most important part of CMP technology. It is generally composed of additives such as abrasives, pH regulators, oxidants, dispersants and deionized water. At present, when the "very large scale integrated circuit planarization m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/18C09G1/02C09K3/14
CPCC01B33/18C09G1/02C09K3/1454C01P2004/03C01P2004/04
Inventor 张延强李辉马科贾永高刘三川
Owner 郑州中科新兴产业技术研究院