A kind of silicon-based tray for mocvd equipment and preparation method

Abstract

The invention discloses a silicon-based tray for MOCVD equipment and a preparation method, which comprises a Si matrix constituting a base material of the tray and a composite coating on the surface of the Si matrix, the composite coating comprising a pyrolytic carbon transition layer, a Si matrix The SiC interface layer at the interface with the pyrolytic carbon transition layer, and the outermost SiC coating, the SiC interface layer is formed by the reaction between the pyrolytic carbon transition layer and the Si matrix at the interface. At high temperature, the pyrolytic carbon layer can form a dense silicon carbide interface layer with the silicon substrate through chemical bonds and strong bonding at the interface, which further protects the pallet substrate. At the same time, the pyrolytic carbon layer can match the difference in thermal expansion coefficient between the substrate and the outermost layer. The soft C-layer structure in the composite coating can effectively relieve the thermal expansion of the outermost SiC crystal to reduce the stress peak in the coating.

Description

technical field [0001] The invention belongs to the field of semiconductors, and in particular relates to a silicon-based tray for MOCVD equipment and a preparation method. Background technique [0002] Graphite susceptor trays (ie trays) for semiconductors are key consumables for epitaxial growth of single crystal InP, GaN, and AlN semiconductors for MOCVD (Metal Organic Chemical Vapor Deposition) equipment, and play an irreplaceable role in the semiconductor chip industry chain. Graphite has excellent properties of high temperature resistance, high thermal conductivity, high temperature strength, etc. It is the preferred material for the base plate of epitaxial single crystal substrate, but graphite material is easy to oxidize, easy to corrode, and has poor wear resistance, and it is easy to produce graphite powder. , it is easy to release adsorbed gas under vacuum, pollute the process growth environment, and greatly reduce the quality of semiconductor films, so it cannot ...

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Problems solved by technology

Graphite has excellent characteristics such as high temperature resistance, high thermal conductivity, and high temperature strength. It is the first choice material for epitaxial single crystal substrate pedestal substrates, but graphite materials are easy to oxidize, corrode, and have poor wear resistance, and graphite powder is easy to produce , it is easy to release adsorbed gas under vacuum, pollute the process growth environment, and greatly reduce the quality of the semiconductor film, so it cannot be directly used to grow semiconductors, and a uniform and dense SiC ceramic coating must be coated on the surface of the graphite base plate

However, due to the large thermal expansion difference between the thermal expansion coefficient of the SiC coating and the graphite substrate, the SiC coating cracks or even falls off, and the graphite substrate lacking coating protection will corrode rapidly, resulting in failure and scrapping, resulting in economic losses and production. cost increase

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