Hot-pressing photon polycrystalline semiconductor material and application thereof

A technology of polycrystalline semiconductors and photons, applied in the field of far-infrared radiation materials, can solve the problems of inability to emit sustainable far-infrared rays, large material mobility, and no mention, so as to promote oxygen-carrying capacity, no ionizing radiation, and maintain The effect of growth

Inactive Publication Date: 2021-03-09
冼光
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, when the far-infrared materials in the prior art are applied to equipment, the mobility of the material is large, the loss is large during use, and stable and sustainable far-infrared rays cannot be emitted; secondly, the prior

Method used

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preparation example Construction

[0067] A third aspect of the present invention provides a method for preparing a hot-pressed photonic polycrystalline semiconductor material, the preparation method at least including the following steps:

[0068] (1) Mix zirconia, zinc oxide, rare earth salt compounds, and silicate compounds, and fire them in a high-temperature furnace at 1200-1800°C to obtain a fired mixture; transfer the fired mixture to a reaction kettle at a temperature of 800-1200℃, pressure 12.5-25MPa, react in high temperature and high pressure reactor for 40-50h, after cooling, grind to obtain powder material;

[0069] (2) Heat the carrier to 130-180°C, add the surface treatment agent and the powder material prepared in step (1), mix and stir for 15-25 hours, send it into an extruder for extrusion and granulation, and dry it.

Embodiment 1

[0075] The hot-pressed photonic polycrystalline semiconductor material is improved, and the preparation raw materials include 10 parts of zirconia, 5 parts of zinc oxide, 14 parts of rare earth salt compounds, 11 parts of silicate compounds, 1.4 parts of surface treatment agent, and 70 parts of carrier by weight. share.

[0076] The zirconia is nano zirconia.

[0077] The nano-zirconia can be obtained commercially, the manufacturer is Beijing Gaoke New Material Technology Co., Ltd., and the model is GK-ZrO 2 -001.

[0078] The zinc oxide is nano zinc oxide.

[0079] The zinc oxide can be obtained commercially, the manufacturer is Hefei Zhonghang Nano Technology Development Co., Ltd., and the model is ZH-ZnO20N.

[0080] The rare earth salt compound is neodymium chloride, cerium acetate and scandium chloride, wherein the mass ratio of neodymium chloride, cerium acetate and scandium chloride is 1:0.9:1.8.

[0081] The silicate compound is a combination of kaolinite, black to...

Embodiment 2

[0089] The hot-pressed photonic polycrystalline semiconductor material is improved, and the preparation raw materials include 5 parts of zirconia, 2 parts of zinc oxide, 9 parts of rare earth salt compounds, 5 parts of silicate compounds, 0.3 parts of surface treatment agent, and carrier in parts by weight. 60 servings.

[0090] The zirconia is nano zirconia.

[0091] The nano-zirconia can be obtained commercially, the manufacturer is Beijing Gaoke New Material Technology Co., Ltd., and the model is GK-ZrO 2 -001.

[0092] The zinc oxide is nano zinc oxide.

[0093] The zinc oxide can be obtained commercially, the manufacturer is Hefei Zhonghang Nano Technology Development Co., Ltd., and the model is ZH-ZnO20N.

[0094] The rare earth salt compound is neodymium chloride, cerium acetate and scandium chloride, wherein the mass ratio of neodymium chloride, cerium acetate and scandium chloride is 1:0.9:1.8.

[0095] The silicate compound is a combination of kaolinite, black to...

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Abstract

The invention relates to the technical field of far-infrared radiation materials, in particular to a hot-pressing photon polycrystalline semiconductor material and application thereof, and the hot-pressing photon polycrystalline semiconductor material at least comprises the following preparation raw materials in parts by weight: 5-15 parts of zirconium oxide, 2-8 parts of zinc oxide, 9-18 parts ofa rare earth salt compound, 5-16 parts of a silicate compound, 0.3-3 part of a surface treating agent and 60-75 parts of a carrier. The obtained hot-pressing photon polycrystalline semiconductor material can be applied to head-mounted products, and can promote the oxygen carrying capacity of human cells, regulate and dredge channels of water molecules in the human body, spontaneously and self-organize the human body to improve the internal and external permeability and potential difference of cell membranes, activate the cell activity, enhance the energy guarantee of an erythrocyte oxygen metabolism system, stretch blood vessels, and improve the vascular elasticity; therefore, tissue oxygen supplying and oxygen dissolving capacity is improved, inflammatory factors of a human body are reduced, and immunity is improved.

Description

technical field [0001] The invention relates to the technical field of far-infrared radiation materials, in particular to a hot-pressed photonic polycrystalline semiconductor material and its application. Background technique [0002] Hot pressing technology is a new technology for the preparation of infrared optical materials developed in the past 20 years. The infrared optical materials prepared by this technology have multiple functions, which can increase the vitality of cells, strengthen metabolism, and enable The substance exchange in the skin is in a stable state, and it has the functions of anti-inflammatory and detumescence. In addition, far infrared enhances tissue nutrition, activates tissue metabolism, increases cell oxygen supply, strengthens cell regeneration, improves blood oxygen supply in wards, controls the development of inflammation and localizes it, and accelerates lesion repair. Moreover, far infrared improves microcirculation, regulates the depth of i...

Claims

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Application Information

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IPC IPC(8): C08L23/08C08L83/04C08K3/22C08K3/34C08K3/38C08K3/26C08K3/16C08K5/098C08K9/06C08K13/06
CPCC08K3/16C08K3/22C08K3/26C08K3/346C08K3/38C08K5/098C08K9/06C08K13/06C08K2003/2244C08K2003/2296C08K2201/011C08K2201/014C08L23/0853C08L83/04
Inventor 冼光
Owner 冼光
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