Method for manufacturing aluminum-silicon target material

Abstract

The invention relates to a method for manufacturing an aluminum-silicon target material. The method comprises the following steps of: providing an AlSi ingot casting step, a drawing step, a primary upsetting step, an intermediate heat treatment step, a secondary upsetting step, a preheating treatment step, a calendaring step and an annealing heat treatment process step, wherein cold drawing operation is used in the drawing step, and a forging ratio X1 in the cold drawing operation is gerater than or equal to 1 and less than 2; in the primary upsetting step, a forging ratio X2 is greater than or equal to 2 and smaller than 3, and cold heading operation is used for primary upsetting; in the intermediate heat treatment step: a product is kept within a first preset temperature range, and is quickly put into cold water after being subjected to heat preservation for first preset time; in the secondary upsetting step, a forging ratio X3 is greater than or equal to 2 and smaller than 3, and cold heading operation is used for secondary upsetting; in the calendaring step: multi-pass calendaring is performed on the product, and reducing rolling reduction along with increase of calendaring passes; and in the annealing heat treatment process step: in an annealing temperature range, heat preservation is performed for third time, and water cooling treatment is performed to form a final targetproduct. According to the method, the forging ratio is reasonably controlled, water cooling is adopted for cooling, so that Si element precipitation is reduced, and therefore the microstructure and the machining performance of the target material are guaranteed.

Description

Technical field [0001] The present invention relates to a method of fabricating an aluminum silicon target. Background technique [0002] Since the aluminum has the characteristics of low electrical resistivity (room temperature of 2.7uΩ), easy to deposition, easy etching, etc., and the process is mature, and therefore mainly used as interconnected materials, it is widely used in integrated circuits, discrete devices, and new display and other electronic information. However, in the pure aluminum process, the problem of aluminum spike, stress migration (SM) and electromigration (EM) due to aluminum silicon solids, and electromigration (EM), which ultimately leads to failure and output rate of devices. In the early days, in order to solve the above problems, a barrier film such as Ta, Ti, Mo is prepared in the outer layer of the aluminum film, so that the aluminum film is not in direct contact with the silicon substrate, but the material such as Ta is high. With the advancement of...

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Problems solved by technology

If the forging ratio is too large, as the forging ratio increases, obvious fibrous structures will be formed, causing the plasticity index of transverse mechanical properties to drop sharply, resulting in forging anisotropy, cracking, shrinkage and other defects. It is easy to nucleate and grow at the defect, form a precipitate, become a hard point, reduce the processing pe

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