High-welding-tension main grid low-temperature silver paste for solar heterojunction battery and preparation method of high-welding-tension main grid low-temperature silver paste

A heterojunction battery and solar energy technology, applied in cable/conductor manufacturing, circuit, photovoltaic power generation, etc., can solve the problems of high volume resistivity, low welding tension, poor printing, etc., and achieve good aging tension, high welding tension, The effect of strong solderability

Active Publication Date: 2021-03-26
四川东树新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the domestic heterojunction busbar silver paste mainly has the following problems: 1. After the used busbar silver paste is cured, the welding tension is low and the solderability is poor; The increase in the proportion of the silver powder in the shape can improve the welding tension, and its volume resistivity is relatively high or the printing property is poor; 3. After the busbar silver paste is cured, the aging tension under certain conditions is almost zero

Method used

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  • High-welding-tension main grid low-temperature silver paste for solar heterojunction battery and preparation method of high-welding-tension main grid low-temperature silver paste

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Embodiment 1

[0023] A low-temperature silver paste for high welding tension busbar for solar heterojunction cells, comprising the following components: 43wt% of low melting point flake silver powder, 46.8wt% of high sintering activity spherical silver powder, 3wt% of low melting point alloy powder, organic binder phase 2wt%, inorganic binder phase 1.2wt%, organic solvent 3wt%, leveling agent 1wt%. Among them, the low melting point alloy powder is 2wt% of tin powder, 1wt% of indium powder; the organic resin in the organic binder phase is bisphenol A type epoxy resin 1wt%, the latent curing agent is blocked isocyanate 1wt%; the organic solvent is diethylene glycol Diol butyl ether acetate 2wt%, 2,2,4-trimethyl-1,3-pentanediol monoisobutyrate 1wt%; leveling agent is silicone leveling agent; high sintering activity spherical silver powder The diameter distribution is D100≤600nm, D50≤400nm, D10≥200nm, tap density 5~6g / cm 3 , specific surface area 0.5~1.0m 2 / g, silver powder active temperatur...

Embodiment 2

[0029] A low-temperature silver paste for high welding tension busbar for solar heterojunction cells, comprising the following components: 65wt% of low melting point flake silver powder, 24.8wt% of high sintering activity spherical silver powder, 3wt% of low melting point alloy powder, organic binder phase 2.1wt%, inorganic binder phase 1.1wt%, organic solvent 3wt%, leveling agent 1wt%. Among them, the low melting point alloy powder is 2wt% of tin powder, 1wt% of indium powder; the organic resin in the organic binder phase is bisphenol A type epoxy resin 1.1wt%, and the latent curing agent is blocked isocyanate 1.0wt%; the organic solvent is Diethylene glycol butyl ether acetate 2wt%, 2,2,4-trimethyl-1,3-pentanediol monoisobutyrate 1wt%; leveling agent is silicone leveling agent; high sintering activity spherical Silver powder particle size distribution is D100≤600nm, D50≤400nm, D10≥200nm, tap density 5~6g / cm 3 , specific surface area 0.5~1.0m 2 / g, silver powder active temp...

Embodiment 3

[0032]A low-temperature silver paste for high welding tension busbar for solar heterojunction cells, comprising the following components: 24.8wt% of low melting point flake silver powder, 65wt% of high sintering activity spherical silver powder, 3wt% of low melting point alloy powder, organic binder phase 2.7wt%, inorganic binder phase 0.5wt%, organic solvent 3wt%, leveling agent 1wt%. Among them, the low melting point alloy powder is 2wt% of tin powder, 1wt% of indium powder; the organic resin in the organic binder phase is bisphenol A type epoxy resin 1.4wt%, and the latent curing agent is blocked isocyanate 1.3wt%; the organic solvent is Diethylene glycol butyl ether acetate 2wt%, 2,2,4-trimethyl-1,3-pentanediol monoisobutyrate 1wt%; leveling agent is silicone leveling agent; high sintering activity spherical Silver powder particle size distribution is D100≤600nm, D50≤400nm, D10≥200nm, tap density 5~6g / cm 3 , specific surface area 0.5~1.0m 2 / g, silver powder active tempe...

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Abstract

The invention provides high-welding-tension main grid low-temperature silver paste for a solar heterojunction battery and a preparation method of the high-welding-tension main grid low-temperature silver paste, which aim to overcome the related technical defects that the main grid silver paste in the field is relatively low in welding tension, relatively poor in weldability, relatively high in volume resistivity or relatively poor in printability after being cured, and almost zero in aging tension under certain conditions at present. The silver paste comprises low-melting-point flake silver powder, high-sintering-activity spherical silver powder, low-melting-point alloy powder, an organic bonding phase, an inorganic bonding phase, an organic solvent and a leveling agent, and is prepared through premixing, temperature control, stirring and grinding, so that the low-temperature silver paste which is high in basic welding tension, good in aging tension, high in weldability after being cured and is especially suitable for preparing the main gate electrode of the heterojunction battery is obtained, and the welding reliability of the heterojunction battery assembly is greatly improved.

Description

technical field [0001] The invention relates to a heterojunction low-temperature silver paste, in particular to a low-temperature silver paste for a solar heterojunction battery with high welding tension busbar and a preparation method thereof. Background technique [0002] HIT is the abbreviation of Heterojunction with Intrinsic Thin-layer, which means intrinsic thin film heterojunction. In the heterojunction cell structure, the intermediate substrate is N-type crystalline silicon, and a layer of 10nm thick i-a-Si intrinsic amorphous silicon is inserted between P-type a-Si and c-Si by PECVD method to form a PN junction ; The back of the battery is a 20nm thick intrinsic a-Si: H and N-type a-Si: H layer, which forms a back surface field while passivating the surface; finally, magnetron sputtering technology is used to sputter ITO on both sides of the battery. The oxide film conducts lateral conduction, and finally prepares electrodes. Compared to homojunction (i.e. crystal...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/22H01L31/0224H01B13/00
CPCH01B1/22H01L31/022425H01B13/00Y02E10/50
Inventor 伍洋王静王海清乔梦书杨红苟鹏飞肖毅
Owner 四川东树新材料有限公司
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