Blue light InP/ZnS quantum dot, preparation method thereof and application of blue light InP/ZnS quantum dot in QLED

A technology of quantum dots and blue light, which is applied in the field of preparation of blue light InP/ZnS quantum dots, which can solve the problems of perovskite quantum dot instability limitations and poor device performance.

Active Publication Date: 2021-04-09
FUZHOU UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] At present, the performance of cadmium-based quantum dots in QLED has been greatly improved, but the toxicity of cadmium greatly limits the commercial application of the quantum dots, and the instability of perovskite quantum dots also makes QLED The preparation of non-toxic InP quantum dots has also been greatly restricted, so the non-toxic InP quantum dots have attracted the attention of the majority of scientific researchers. At present, the QLED performance of red and green InP quantum dots has been greatly improved, while blue InP quantum dots Further exploration is needed to improve the performance of blue light InP quantum dots synthesized by traditional methods, and the luminous wavelength of blue InP quantum dots synthesized by traditional methods is above 470nm, which is a kind of sky blue light, and the performance of the device after being prepared into QLED is very poor.

Method used

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  • Blue light InP/ZnS quantum dot, preparation method thereof and application of blue light InP/ZnS quantum dot in QLED
  • Blue light InP/ZnS quantum dot, preparation method thereof and application of blue light InP/ZnS quantum dot in QLED

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Embodiment 1

[0018] A method for synthesizing blue light InP / ZnS quantum dots, the specific preparation steps are:

[0019] A kind of synthetic method of blue light InP / ZnS quantum dot, indium source, phosphorus source, zinc iodide, oleylamine, zinc stearate, 1-dodecanthiol, 1-octadecene are placed in the flask of 50ml, The phosphorus source includes P[N(CH3)2]3, (DMA)3P, TMS3P, the indium source is InCl3, InI3, In(OAc)3, In(Ac)3, and the ratio of phosphorus source to indium source is 5:1 . Then first vacuumize for 30 minutes, remove the air in the flask as much as possible, then feed nitrogen at 100 degrees Celsius for 20 minutes, quickly increase the temperature of the liquid in the flask to 200 degrees Celsius, reach the reaction temperature of the phosphorus source and the indium source, and react for 20 minutes. The lnp nucleus whose size just emits pure blue light below 470nm is generated. Then rapidly increase the temperature to 300 degrees Celsius to reach the reaction temperatur...

Embodiment 2

[0021] figure 2 It is the device structure diagram of QLED of the present invention

[0022] The device structure is: ITO / PEDOT:PSS / TFB / InP QD / ETL / Ag

[0023] Specific implementation: The device substrate is selected as a glass substrate, and then the substrate containing the anode layer ITO is ultrasonically cleaned with acetone, isopropanol, and deionized water in sequence, dried, and plasma treated. The hole injection layer is spin-coated, the hole injection layer is PEDOT:PSS, the hole transport layer is TFB, and it is formed by spin coating. The annealing temperature of the hole injection layer and the hole transport layer is 120 degrees Celsius. The time is 20 minutes, the rotational speed during spin coating is 3000 rpm, and the spin coating time is 40 s. As the light-emitting layer of the device, InP / ZnS quantum dots can be prepared by spin coating and inkjet printing. The advantage of the spin coating process is that it is relatively simple to operate, while the ad...

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Abstract

The invention discloses a blue light InP/ZnS quantum dot, a preparation method thereof and application of the blue light InP/ZnS quantum dot in a QLED device. According to the invention, an indium source, a phosphorus source, zinc iodide, oleylamine, zinc stearate, 1-dodecanethiol and 1-octadecene are placed in a 50ml flask, in a nitrogen environment, different temperatures and reaction time are controlled to respectively form an InP core and a ZnS shell, and then the InP/ZnS quantum dot emitting pure blue light is obtained. Compared with the traditional method, the method for synthesizing the InP/ZnS quantum dot by utilizing a one-pot method is simple and more time-saving, the lattice mismatch degree between the shell and the core of the synthesized quantum dot is lower, the defects are fewer, the fluorescence quantum efficiency is higher, the light emitting peak wavelength of the blue quantum dot synthesized by utilizing the traditional method is mostly 470nm or above, the quantum dot disclosed by the invention has a light-emitting peak wavelength of 470 nm or less and is pure blue light, and the prepared QLED has the non-toxic advantage compared with cadmium quantum dots and is more beneficial to commercialization.

Description

technical field [0001] The invention belongs to the display field, and in particular relates to a preparation method of blue light InP / ZnS quantum dots and an application in QLED devices. Background technique [0002] At present, the performance of cadmium-based quantum dots in QLED has been greatly improved, but the toxicity of cadmium greatly limits the commercial application of the quantum dots, and the instability of perovskite quantum dots also makes QLED The preparation of non-toxic InP quantum dots has also been greatly restricted, so the non-toxic InP quantum dots have attracted the attention of the majority of scientific researchers. At present, the QLED performance of red and green InP quantum dots has been greatly improved, while blue InP quantum dots Further exploration is needed to improve the performance of blue light InP quantum dots synthesized by traditional methods, and the emission wavelength of blue InP quantum dots synthesized by traditional methods is a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/70C09K11/56C09K11/02B82Y20/00B82Y30/00B82Y40/00H01L51/50
CPCC09K11/703C09K11/565C09K11/02C09K11/70B82Y20/00B82Y30/00B82Y40/00H10K50/115
Inventor 李福山陈祥胡海龙鞠松蔓杨开宇郭太良
Owner FUZHOU UNIV
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