MoS2/MoSe2 heterojunction thin film, and preparation method and application thereof

Abstract

The invention discloses a preparation method of a MoS2 / MoSe2 heterojunction thin film, and relates to the field of semiconductor thin film preparation technologies and new energy development. The preparation method comprises the following steps: (1) preparing a reaction precursor solution, namely adding a reducing reagent into a solvent, and stirring till that the reducing reagent is dissolved; after dissolving, sequentially adding a sulfur source, a molybdenum source and a selenium source, stirring until dissolving, and uniformly mixing to obtain a reaction precursor solution; (2) carrying out early-stage surface treatment on the substrate, namely cutting the substrate, carrying out ultrasonic cleaning after cutting, soaking and cleaning, and carrying out drying treatment after cleaning; (3) carrying out solvothermal reaction: enabling the substrate subjected to early-stage surface treatment in the step (2) to be in contact with the reaction precursor solution obtained in the step (1), and carrying out solvothermal reaction to obtain a substrate deposited with a MoS2 / MoSe2 heterojunction thin film; and (4) cleaning the substrate deposited with the MoS2 / MoSe2 heterojunction thin film obtained in the step (3), and carrying out vacuum drying to obtain the MoS2 / MoSe2 heterojunction thin film.

Description

technical field [0001] The invention relates to the fields of semiconductor film preparation technology and new energy development, especially a kind of MoS 2 / MoSe 2 Heterojunction thin films and their preparation methods and applications. Background technique [0002] MoS 2 、MoSe 2 All belong to transition metal chalcogenides (TMDS, such as WS2, WSe2, MoS2, MoSe2, etc.), of which MoS 2 For p-type semiconductor material, MoSe 2 It is an n-type semiconductor material, which has the advantages of unique energy band structure, good electron transport characteristics, excellent electrochemical catalytic performance, and stable performance. Therefore, it is considered to be a good application in solar cells, light Materials for detectors, field effect transistors, and photocatalytic hydrogen production. [0003] At present, the common preparation methods of heterojunction structure materials are generally magnetron sputtering, chemical vapor deposition (CVD) and other meth...

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Problems solved by technology

[0004] At present, there are still some deficiencies in the commonly used preparation methods. For example, the residual gas after the reaction may be flammable, explosive or toxic through the method of chemical vapor deposition. Measures to prevent environmental pollution need to be taken. For equipment, there are often requirements for corrosion resistance. , the deposition rate is not high, and the application is limited