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Thinning grinding wheel, assembly of thinning grinding wheel, thinning silicon carbide substrate, thinning method and application

A silicon carbide substrate and silicon carbide technology, applied in the direction of bonding grinding wheels, electrical components, semiconductor devices, etc., can solve expensive problems, achieve high pass rate, improve pass rate, and reduce substrate damage rate.

Active Publication Date: 2021-04-27
湖南三安半导体有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] At present, the material cost of silicon carbide substrates is still relatively expensive. How to reduce material loss, reduce the consumption of consumables, and thereby reduce the cost of subsequent processing has become a problem that needs to be solved.

Method used

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  • Thinning grinding wheel, assembly of thinning grinding wheel, thinning silicon carbide substrate, thinning method and application
  • Thinning grinding wheel, assembly of thinning grinding wheel, thinning silicon carbide substrate, thinning method and application
  • Thinning grinding wheel, assembly of thinning grinding wheel, thinning silicon carbide substrate, thinning method and application

Examples

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Embodiment 1

[0070] This embodiment provides a thinning grinding wheel, which includes a grinding wheel base 3 and a thinning base 4 provided on the surface (lower surface in the figure) of the grinding wheel base 3 for contact with the silicon carbide substrate 1 . The thinned base 4 is formed by connecting a plurality of thinned teeth sequentially end to end along the circumference of the grinding wheel base 3 , and the thinned base 4 does not contain diamond solids and adhesives.

[0071] Each of the aforementioned thinning teeth has opposite left and right ends along the circumference of the grinding wheel base 3 , and the height of each thinning tooth gradually increases from the left end to the right end. The height difference between the left end and the right end of each thinning tooth is 10 μm, and the minimum height of each thinning tooth is 500 μm. Moreover, the width of each thinning tooth gradually increases from the left end to the right end. The width difference between the...

Embodiment 2

[0074] This embodiment provides a thinning grinding wheel, which includes a grinding wheel base 3 and a thinning base 4 provided on the surface (lower surface in the figure) of the grinding wheel base 3 for contact with the silicon carbide substrate 1 . The thinned base 4 is formed by connecting a plurality of thinned teeth sequentially end to end along the circumference of the grinding wheel base 3 , and the thinned base 4 does not contain diamond solids and adhesives.

[0075] Each of the aforementioned thinning teeth has opposite left and right ends along the circumference of the grinding wheel base 3 , and the height of each thinning tooth gradually increases from the left end to the right end. The height difference between the left end and the right end of each thinning tooth is 100 μm, and the minimum height of each thinning tooth is 10 μm. Moreover, the width of each thinning tooth gradually increases from the left end to the right end, the width difference between the ...

Embodiment 3

[0078] This embodiment provides a thinning grinding wheel, which includes a grinding wheel base 3 and a thinning base 4 provided on the surface (lower surface in the figure) of the grinding wheel base 3 for contact with the silicon carbide substrate 1 . The thinned base 4 is formed by connecting a plurality of thinned teeth sequentially end to end along the circumference of the grinding wheel base 3 , and the thinned base 4 does not contain diamond solids and adhesives.

[0079] Each of the aforementioned thinning teeth has opposite left and right ends along the circumference of the grinding wheel base 3 , and the height of each thinning tooth gradually increases from the left end to the right end. The height difference between the left end and the right end of each thinning tooth is 200 μm, and the minimum height of each thinning tooth is 1000 μm. Moreover, the width of each thinning tooth gradually increases from the left end to the right end, the width difference between th...

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Abstract

The invention provides a thinning grinding wheel, an assembly of the thinning grinding wheel, a thinning silicon carbide substrate, a thinning method and application, and relates to the technical field of silicon carbide machining. The thinning grinding wheel comprises a grinding wheel base and a thinning base formed by sequentially connecting multiple thinning teeth end to end in the circumferential direction of the grinding wheel base; and the thinning base does not contain diamond solids. According to the thinning grinding wheel, scratches with different depths in the silicon carbide thinning process can be avoided, and the loss and the machining cost of the silicon carbide substrate can be reduced. The silicon carbide thinning assembly comprising the thinning grinding wheel can effectively thin silicon carbide. When the assembly is used for thinning operation, the scratching depth of the surface of the thinned silicon carbide substrate can be reduced, even a damage layer on the surface of the silicon carbide substrate is reduced, the smoothness of the surface of the thinning substrate is improved, in addition, the substrate breakage rate in the thinning process can be reduced, and the percent of pass of substrate processing is improved. The obtained thinning silicon carbide substrate is smooth in surface and high in percent of pass, and can be further used for processing semiconductor devices.

Description

technical field [0001] The invention relates to the field of silicon carbide processing, in particular to a thinning grinding wheel and its components, a thinning silicon carbide substrate, and a thinning method and application. Background technique [0002] Because of its wide bandgap, high thermal conductivity, high breakdown electric field and high radiation resistance, silicon carbide single crystal materials can meet the needs of today's high power and strong radiation devices. It is an ideal substrate material for high-temperature, high-frequency, high-power and radiation-resistant devices, and has emerged in the fields of hybrid electric vehicles, high-voltage power transmission, LED lighting, and aerospace. Growing high-quality SiC crystals is the key to realizing these SiC-based devices. The basis for excellent performance. [0003] The hardness of SiC crystal can reach 9.2 on the Mohs scale, second only to the hardness of diamond. Therefore, during the processing...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24D7/06B24D7/16B24B41/06B24B7/22B24B49/00H01L29/16
CPCB24D7/06B24D7/16B24B41/068B24B7/228B24B49/006H01L29/1608
Inventor 汪良张洁王旻峰
Owner 湖南三安半导体有限责任公司