Silicon-based negative electrode material and preparation method thereof, lithium ion battery and electric appliance
A technology of silicon-based negative electrode material and negative electrode material, applied in battery electrodes, negative electrodes, electrode manufacturing, etc., can solve the problems of large irreversible capacity, low coulombic efficiency, consumption of lithium ions, etc.
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[0033] A method for preparing a silicon-based negative electrode material, comprising:
[0034] Annealing the primary negative electrode material with Si-Cu coating on the surface obtained by cold spraying at 500-800° C. under an inert gas atmosphere, and keeping it warm for 7-9 hours.
[0035] Annealing the Si-Cu coated primary anode material by cold spraying (ie supersonic dynamic spraying) under an inert atmosphere in a tube furnace can greatly inhibit the detachment of silicon particles and copper particles, thereby providing better cycle performance. The increase in the interface stability of the annealed sample is mainly due to the formation of Cu at the interface 3 In Si alloy phase, Cu atoms diffuse to Si particles. Conductive and inactive Cu formed in silicon 3 Si phase as buffer medium, highly conductive Cu 3 Si has excellent mechanical flexibility and high electronic conductivity, which can slow down structural degradation and provide high conductivity. The Si-C...
Embodiment 1
[0063] The preparation method of the silicon-based negative electrode material provided in this embodiment is operated according to the specific steps described above, specifically:
[0064] The mass ratio of silicon to copper in the silicon-copper mixed powder is 8:2.
[0065] The process parameters during cold spraying are: gas pressure 4MPa, gas flow rate 3ml / min, gas temperature 800°C; scanning speed 200mm / s, powder feeding volume 200g / min.
[0066] The annealing temperature is 600°C, and the holding time is 9h.
Embodiment 2
[0068] The preparation method of the silicon-based negative electrode material provided in this embodiment is operated according to the specific steps described above, specifically:
[0069] The mass ratio of silicon to copper in the silicon-copper mixed powder is 8:2.
[0070] The process parameters during cold spraying are: gas pressure 3MPa, gas flow rate 3ml / min, gas temperature 800°C; scanning speed 200mm / s, powder feeding volume 200g / min.
[0071] The annealing temperature is 600°C, and the holding time is 9h.
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