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Rare earth ion doped sesquioxide visible laser crystal material

A technology of sesquioxide and laser crystal, which is applied in the growth of polycrystalline materials, lasers, crystal growth, etc., can solve the problems of low thermal conductivity, poor chemical stability, poor machining performance, etc., and achieve high thermal conductivity and low Effects of Phonon Energy

Inactive Publication Date: 2021-05-28
ANHUI UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a rare earth ion-doped sesquioxide visible laser crystal material to solve the problem of low thermal conductivity, poor chemical stability, poor mechanical processing performance, preparation difficulties and oxidation of fluoride visible laser crystal materials in the prior art. The problem of high phonon energy in material-visible laser crystal materials, thus providing a new laser working medium for the development of all-solid-state visible lasers

Method used

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  • Rare earth ion doped sesquioxide visible laser crystal material
  • Rare earth ion doped sesquioxide visible laser crystal material
  • Rare earth ion doped sesquioxide visible laser crystal material

Examples

Experimental program
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Effect test

Embodiment 1

[0032] Example 1: Tb 3+ Doped sesquioxide crystal Tb:Yb 2 o 3 Preparation by pulling method

[0033] (1) Preparation of polycrystalline raw materials: Tb with a purity of 99.99% 4 o 7 and Yb 2 o 3 Powder raw material was used as starting material to prepare Tb 3+ Doping concentration of 1at% Tb 0.02 Yb 1.98 o 3 Powdered polycrystalline raw material; the initial raw material is accurately weighed according to the following chemical reaction formula dosage ratio, then the initial raw material is uniformly mixed and pressed into a block with an isostatic press, and then the block raw material is put into an alumina ceramic crucible and put into Carry out sintering in a muffle furnace, the sintering temperature is 1500°C, and the constant temperature sintering time is 24 hours to obtain polycrystalline raw materials;

[0034] 0.005Tb 4 o 7 +0.99Yb 2 o 3 =Tb 0.02 Yb 1.98 o 3 +0.00025O 2

[0035] (2) Crystal growth: use the pulling method crystal growth method to ...

Embodiment 2

[0037] Example 2: Tb 3+ Doped sesquioxide crystal Tb:Yb 2 o 3 Preparation by high temperature floating zone method

[0038] (1) Preparation of polycrystalline raw materials: Tb with a purity of 99.99% 4 o 7 and Yb 2 o 3 Powder raw material was used as starting material to prepare Tb 3+ Doping concentration of 1at% Tb 0.02 Yb 1.98 o 3 Powdered polycrystalline raw material; the initial raw material is accurately weighed according to the following chemical reaction formula dosage ratio, then the initial raw material is uniformly mixed and pressed into a thin rod with an isostatic press, and then the thin rod is put into an alumina ceramic crucible and put into Sintering is carried out in a muffle furnace, the sintering temperature is 1500 ° C, and the constant temperature sintering time is 24 hours. After the sintering is completed, the thin rods are processed and rounded to make two thin rods with a diameter of 5 mm, which are used as the floating zone method crystal gr...

Embodiment 3

[0041] Example 3: Tb 3+ Doped sesquioxide crystal Tb:Yb 2 o 3 drop method preparation

[0042] (1) Preparation of polycrystalline raw materials: Tb with a purity of 99.99% 4 o 7 and Yb 2 o 3 Powder raw material was used as starting material to prepare Tb 3+ Doping concentration of 1at% Tb 0.02 Yb 1.98 o 3 Powdered polycrystalline raw material; the initial raw material is accurately weighed according to the following chemical reaction formula dosage ratio, then the initial raw material is uniformly mixed and pressed into a block with an isostatic press, and then the block raw material is put into an alumina ceramic crucible and put into Carry out sintering in a muffle furnace, the sintering temperature is 1500°C, and the constant temperature sintering time is 24 hours.

[0043] 0.005Tb 4 o 7 +0.99Yb 2 o 3 =Tb 0.02 Yb 1.98 o 3 +0.00025O 2

[0044] (2) Crystal growth: adopt the descending method crystal growth method to grow, the polycrystalline raw material pr...

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Abstract

The invention discloses a rare earth ion doped sesquioxide visible laser crystal material in the technical field of laser crystal materials and all-solid-state lasers. The chemical formula of the laser crystal is (RE<x>RE'<1-x>)2O3, wherein RE is Tb, Dy, Sm or Pr, RE' is Y, Sc, Yb or Lu, and 0.001 < = x < = 0.5; Rare earth sesquioxide crystals Y2O3, Sc2O3, Lu2O3 and Yb2O3 with high thermal conductivity, low phonon energy and high quantum efficiency are used as laser host crystals, Tb<3+>, Dy<3+>, Sm<3+> and Pr<3+> are used as laser active ions, a floating zone method, a descent method and other crystal growth methods are adopted for growth, and a GaN laser diode with a proper output wavelength is selected for pumping according to the absorption wavelength of a laser pumping channel of laser activated ions, so that high-power and high-efficiency visible band laser output is realized, and the material has important significance for developing a high-power and high-efficiency all-solid-state visible laser.

Description

technical field [0001] The invention relates to laser crystal materials and the technical field of all-solid-state lasers, in particular to a rare-earth ion-doped sesquioxide visible laser crystal material and its preparation method and the use of GaN laser diodes to pump the laser crystal to realize all-solid-state visible laser output method. Background technique [0002] Visible lasers have important applications in the fields of new generation laser display, high-density storage, photoelectric countermeasures, biomedicine, national defense, and scientific research. At present, the methods for realizing visible laser output mainly include semiconductor lasers and nonlinear optical frequency conversion technology. Among them, the visible laser output of semiconductor lasers has poor coherence, large divergence angle, and poor beam quality; while nonlinear optical frequency conversion technology uses the frequency doubling effect of nonlinear crystals to convert near-infra...

Claims

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Application Information

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IPC IPC(8): C30B29/22C30B28/02C30B15/00C30B11/00H01S3/16
CPCC30B11/00C30B15/00C30B28/02C30B29/22H01S3/163H01S3/1691
Inventor 丁守军葛瑞任浩李泓沅邹勇唐绪兵
Owner ANHUI UNIVERSITY OF TECHNOLOGY
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