High-reliability double-sided battery and preparation method thereof

A bifacial battery and reliable technology, applied in the field of solar cells, can solve the problems of unsatisfactory improvement of the PID attenuation phenomenon on the back of the double-sided battery, PID on the back of the double-sided battery restricts the promotion of double-sided PERC products, etc.

Pending Publication Date: 2021-05-28
TONGWEI SOLAR (ANHUI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above method is not ideal for improving the PID attenuation phenomenon on the back of the double-sided battery.
[0009] Therefore, how to further improve the improvement effect of reliability issues such as PID on the back of double-sided cells has become an important challenge that limits the promotion of double-sided PERC products and needs to be resolved urgently

Method used

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  • High-reliability double-sided battery and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Such as figure 1As shown, the back battery of this embodiment includes a silicon wafer substrate 1, and the back surface of the silicon wafer substrate 1 is sequentially provided with a silicon oxide protective layer 4, an aluminum oxide passivation layer 5, and a silicon nitride passivation and protective layer 6. , wherein the silicon oxide protective layer 4 is deposited by ALD, and its specific preparation process is as follows: put the silicon wafer into the atomic layer deposition chamber, heat the silicon wafer substrate to a temperature of 150°C, and evacuate the reaction chamber until the pressure reaches When the temperature is 20mbar or below, feed tris(dimethylamino)silane (silicon-based precursor) with a flow rate of 150 sccm for 4s; then purge with nitrogen for 20s; Purge for 10s; repeat the above steps 20 times to prepare a silicon oxide protective film of about 2nm.

Embodiment 2

[0056] The rear cell of this embodiment comprises a silicon wafer base 1, and the front side of the silicon wafer base 1 is provided with a front emitter 2, a front oxide layer 3, a front silicon nitride passivation and anti-reflection layer 7, and a positive electrode 10 in sequence from bottom to top. , and its back is sequentially provided with a silicon oxide protective layer 4 , an aluminum oxide passivation layer 5 , a silicon nitride passivation and protective layer 6 and a rear sub-gate electrode 9 from inside to outside.

[0057] The preparation process of the rear battery in this embodiment includes the following steps:

[0058] 1. Texture making: use single crystal P-type silicon wafer substrate 1, and use alkali to make texturing on the front and back to form a textured structure.

[0059] 2. Diffusion: React the silicon wafer after texturing with phosphorus oxychloride and the silicon wafer at high temperature, so that the front diffuses to form a PN emitter junct...

Embodiment 3

[0078] The structure of the back battery of this embodiment is the same as that of Example 2, and the preparation method of the back battery of this embodiment specifically includes the following process steps:

[0079] 1. Texture making: Single crystal P-type silicon wafers are used, and alkali is used to make texturing on the front and back to form a textured structure.

[0080] 2. Diffusion: React the silicon wafer after texturing with phosphorus oxychloride and the silicon wafer at high temperature to make the front diffuse to form a PN emitter junction 2 . Diffusion is carried out by the above-mentioned diffusion process, and the square resistance of the thin layer on the front surface after diffusion is between 150Ω / □.

[0081] 3. Laser SE: use the diffused phosphosilicate glass as the phosphorus source, and perform laser doping on the front side of the diffused silicon wafer and the metallized area corresponding to the positive electrode grid line to form a heavily dope...

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Abstract

The invention discloses a high-reliability double-sided battery and a preparation method thereof, and belongs to the technical field of solar batteries. According to the preparation method of the high-reliability double-sided battery, a silicon oxide protection layer is prepared on the back surface of the battery in an ALD or PEALD manner; when the silicon oxide protection layer is deposited, a silicon-based precursor is any one of hexachlorodisilane, disilane, disilane, trisilane and trimethylsilylamine; and the oxidant precursor is ozone or oxygen. By adopting the technical scheme of the invention, the back PID problem of the double-sided battery can be effectively improved, and the long-term stability of the battery piece is further improved.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and more specifically relates to a high-reliability double-sided cell and a preparation method thereof. Background technique [0002] Potential induced degradation (PID) refers to the phenomenon of power attenuation of solar cell modules under a certain external voltage for a long time. This phenomenon was first discovered by Sunpower in 2005. According to the statistics of relevant authoritative organizations, the attenuation of the power generation of photovoltaic power plants caused by PID can reach more than 30%, which has become one of the most important reasons for the attenuation of output efficiency of photovoltaic power plants and has become a major problem in the application of components. [0003] Regarding the failure mechanism of PID, it has been extensively studied by the industry and recognized as follows: In grid power generation, many photovoltaic modules are connected in se...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/02H01L31/0216
CPCH01L31/1804H01L31/1868H01L31/02167H01L21/02164H01L21/0228Y02P70/50Y02E10/547
Inventor 黄智张林张鹏黄水华胡耀霆张世昌徐涛顾峰翟绪锦谢泰宏
Owner TONGWEI SOLAR (ANHUI) CO LTD
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