A treatment method for reducing the internal stress of single crystal diamond

A technology of single crystal diamond and processing method, which is applied in post-processing, single crystal growth, single crystal growth, etc., can solve problems such as reducing the internal stress of single crystal diamond, and achieve the goals of simplifying the production process, saving time, and saving costs Effect

Active Publication Date: 2022-07-12
LANGFANG SUPOWER DIAMOND TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to reduce the defect of low quality of single crystal diamond caused by the increase of internal stress during the growth of single crystal diamond, the application provides a treatment method for reducing the internal stress of single crystal diamond

Method used

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  • A treatment method for reducing the internal stress of single crystal diamond
  • A treatment method for reducing the internal stress of single crystal diamond
  • A treatment method for reducing the internal stress of single crystal diamond

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Preparation of diamond seed crystal: Put the diamond seed crystal into alcohol, acetone, and deionized water in sequence for ultrasonic cleaning for 10 minutes, the ultrasonic power is 400W, then dry the diamond seed crystal, and put it into the reaction chamber of the microwave plasma vapor deposition equipment ; Growth of single crystal diamond - high temperature annealing treatment:

[0042] S1: The reaction chamber of the microwave plasma vapor deposition equipment is evacuated, and the background vacuum is evacuated to 0.1Pa; the program is started, the flow rate of hydrogen gas is 200sccm, the chamber pressure is 1000Pa, the microwave generator is started, and the plasma is activated; increase the power and air pressure, so that the surface temperature of the diamond seed crystal is 700 ℃, and methane gas is introduced for growth, and the flow rate of methane gas is 20sccm;

[0043] S2: Grow 15 single crystal diamonds with a thickness of 0.1-0.5mm to 1.0-1.5mm, th...

Embodiment 2

[0049] Preparation of diamond seed crystal: put the diamond seed crystal into alcohol, acetone and deionized water successively for ultrasonic cleaning for 20min, the ultrasonic power is 600W, then dry the diamond seed crystal and put it into the reaction chamber of the plasma vapor deposition equipment;

[0050] Growth of single crystal diamond - high temperature annealing treatment:

[0051] S1: The reaction chamber of the microwave plasma vapor deposition equipment is evacuated, and the background vacuum is evacuated to 0.1Pa; the program is started, the flow rate of hydrogen is 1000sccm, the chamber pressure is 2000Pa, the microwave generator is started, and the plasma is activated; increase the power and air pressure, so that the surface temperature of single crystal diamond is 1200 ℃, and methane gas is introduced for growth, and the flow rate of methane gas is 100sccm;

[0052] S2: Grow 15 single crystal diamonds with a thickness of 0.1-0.5mm to 1.0-1.5mm, then heat the...

Embodiment 3

[0058] Preparation of diamond seed crystal: put the diamond seed crystal into alcohol, acetone, and deionized water for ultrasonic cleaning for 15min in turn, the ultrasonic power is 500W, then dry the diamond seed crystal, and put it into the reaction chamber of the microwave plasma vapor deposition equipment ; Growth of single crystal diamond - high temperature annealing treatment:

[0059] S1: The reaction chamber of the microwave plasma vapor deposition equipment is evacuated, and the background vacuum is evacuated to 0.1Pa; the program is started, the flow rate of hydrogen is 600sccm, the chamber pressure is 1500Pa, the microwave generator is started, and the plasma is activated; increase the power and air pressure, so that the surface temperature of the diamond seed crystal is 850°C, and methane gas is introduced for growth, and the flow rate of methane gas is 60sccm;

[0060] S2: grow 15 single crystal diamonds with a thickness of 0.1-0.5mm to 1.0-1.5mm, and then heat t...

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Abstract

The present application relates to the technical field of single crystal diamond preparation, and specifically discloses a treatment method for reducing the internal stress of single crystal diamond. Including the following steps: preparation of diamond seed crystal; growth of single crystal diamond - high temperature annealing treatment: diamond seed crystal is grown and high temperature annealing treatment, high temperature annealing is performed once after each growth, growth and high temperature annealing treatment are alternately performed, and the number of high temperature annealing is performed. 2 to 5 times until the single crystal diamond grows to 5.0-5.5mm; the high-temperature annealing treatment conditions for the single-crystal diamond: the high-temperature annealing temperature is 1000-2000°C, and the time is 30-90min. The method of the present application is simple to operate, easy to implement, simplifies the process flow, saves time and cost, and the single crystal diamond prepared by the present application has the advantages of low internal stress, high surface and internal quality, less cracks and high yield.

Description

technical field [0001] The present application relates to the technical field of single crystal diamond preparation, and more particularly, to a processing method for reducing the internal stress of single crystal diamond. Background technique [0002] Single crystal diamond has many excellent physical and chemical properties. It has high hardness, good wear resistance, high optical transmittance and high chemical stability. It is widely used in industrial fields, aerospace fields, jewelry fields and ultra-precision machining technology. field. At present, microwave plasma chemical vapor deposition is one of the commonly used methods for preparing single crystal diamond, and it is also the best method for preparing high quality single crystal diamond. [0003] During the growth of single crystal diamond, the internal stress inside the crystal will gradually accumulate with time or the thickness of single crystal diamond. When it reaches a certain level, the single crystal d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/04C30B25/00C30B33/02
CPCC30B29/04C30B25/00C30B33/02
Inventor 王斌王连忠卢泽余军火杨成武
Owner LANGFANG SUPOWER DIAMOND TECH
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