Metallization and heat sink integrated preparation method of AlN ceramic substrate

Abstract

The invention discloses a metallization and heat sink integrated preparation method of an AlN ceramic substrate. According to the preparation method, a Ti metallization layer, a Ti-Cu gradient transition layer and a Cu heat sink layer are sequentially formed on the AlN ceramic substrate by the aid of a physical vapor deposition technology, and a transition layer Al3Ti+TiN is formed between an AlN layer and a Ti layer in the deposition process. The method specifically comprises the steps that surface polishing treatment is performed on the AlN ceramic substrate; the polished AlN ceramic substrate is soaked, cleaned and then dried; the surface of the cleaned AlN ceramic substrate is sequentially plated with the Ti metallization layer, the Ti-Cu gradient transition layer and the Cu heat sink layer by the aid of a magnetron sputtering deposition method, in the deposition process, the transition layer Al3Ti+TiN is automatically formed between the AlN layer and the Ti layer, and finally, the metallization and heat sink integrated AlN ceramic substrate is formed. According to the method, the metallization and heat sink integrated plating layer is deposited on the AlN ceramic substrate by the aid of the high vacuum magnetron sputtering technology, so that the overall packaging strength is greatly improved, the packaging process flow is shortened, the packaging consumption is reduced, and the production cost is remarkably reduced.

Description

technical field [0001] The invention belongs to the field of ceramic substrate metallization, and in particular relates to an integrated preparation method of AlN ceramic substrate metallization and heat sinking. Background technique [0002] The continuous development of electronic devices to high frequency, high power, wide frequency band, and miniaturization has brought about the problem of heat dissipation of the device, which has seriously affected the use and life of the device. AlN ceramics have good thermal conductivity, high mechanical strength, good mechanical properties, and non-toxicity, and are technically the best choice for insulating materials. However, problems such as difficulty in metallizing the surface of AlN ceramics, poor bonding strength with the heat sink metal, easy generation of pores in the interface layer, and low density have hindered the large-scale use of AlN ceramics as packaging substrates. [0003] In the prior art, the commonly used direc...

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Problems solved by technology

However, problems such as difficulty in metallizing the surface of AlN ceramics, poor bonding strength with the heat sink metal, easy generation of pores and low density in the interface layer have hindered the large-scale use of AlN ceramics as packaging substrates.

[0004] When the thin-film metallized AlN ceramic substrate is connected with heat sinks such as copper to realize the packaging function, the defects of brazing often lead to the decline of the overall package thermal conductivity, connection strength, and package airtightness, and for small-sized device packages The dimensional accuracy is seriously affected, and even the effective packaging of micro-devices such as micro-electro-mechanical systems cannot be realized.

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