A non-mechanical contact magnetic in-situ ultrasonic vibration chemical mechanical polishing method

A non-mechanical contact, ultrasonic vibration technology, used in polishing compositions containing abrasives, grinding machine tools, metal processing equipment, etc., can solve the problems of difficulty in ensuring the stability of the resonance mode, low vibration conduction efficiency, etc., to improve the polishing effect. , the effect of good vibration distribution uniformity, strong flexibility and adaptability

Active Publication Date: 2022-03-18
无锡兴华衡辉科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The invention solves some technical problems existing in the existing mechanical contact ultrasonic vibration assisted chemical mechanical polishing method. For example, when ultrasonic vibration is used for assisted polishing, it is transmitted to the polished surface through mechanical contact, and it is necessary to adjust the vibration frequency and the mechanical structure. Complicated matching, low vibration conduction efficiency, difficult to ensure the stability of resonance mode

Method used

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  • A non-mechanical contact magnetic in-situ ultrasonic vibration chemical mechanical polishing method
  • A non-mechanical contact magnetic in-situ ultrasonic vibration chemical mechanical polishing method
  • A non-mechanical contact magnetic in-situ ultrasonic vibration chemical mechanical polishing method

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Embodiment 1

[0073] The experimental materials used in this embodiment are as follows:

[0074] Ferromagnetic particles: Fe modified with trisodium citrate produced by Zhongke Leiming (Beijing) Technology Co., Ltd. 3 o 4 Microspheres (average diameter 7nm);

[0075] Polishing liquid: Polishing liquid with high selectivity ratio silicon rough polishing produced by Anji Microelectronics Technology (Shanghai) Co., Ltd.;

[0076] Substrate: a single crystal silicon wafer with a diameter of 25.4mm and a surface roughness of 0.5μm;

[0077] Substrate carrier: made of ABS engineering plastics, with a diameter of 100mm and a thickness of 8mm;

[0078] The first electromagnetic coil and the second electromagnetic coil: both are electromagnetic coils with an inner diameter of 10 mm and an outer diameter of 100 mm.

[0079] The steps of the chemical mechanical polishing adopted in the present embodiment are as follows:

[0080] (1) 0.7% by weight percent of Fe modified by trisodium citrate 3 o ...

Embodiment 2

[0086] The experimental materials used in this embodiment are as follows:

[0087] Ferromagnetic particles: Fe modified with trisodium citrate produced by Zhongke Leiming (Beijing) Technology Co., Ltd. 3 o 4 Microspheres (average diameter 30nm);

[0088] Polishing liquid: Polishing liquid with high selectivity ratio silicon rough polishing produced by Anji Microelectronics Technology (Shanghai) Co., Ltd.;

[0089] Substrate: a single crystal silicon wafer with a diameter of 25.4mm and a surface roughness of 0.5μm;

[0090] Substrate carrier: made of ABS engineering plastics, with a diameter of 100mm and a thickness of 8mm;

[0091] The first electromagnetic coil and the second electromagnetic coil: both are electromagnetic coils with an inner diameter of 10 mm and an outer diameter of 100 mm.

[0092] The steps of the chemical mechanical polishing adopted in the present embodiment are as follows:

[0093] (1) 1.0% by weight of Fe modified by trisodium citrate 3 o 4 Magn...

Embodiment 3

[0099] The experimental materials used in this embodiment are as follows:

[0100] Ferromagnetic particles: nano-nickel powder (average diameter 40nm) from Shanghai Chaowei Nano Technology Co., Ltd.;

[0101] Polishing liquid: adopt the self-made high pH stability polishing liquid of the present invention, its component comprises the pH buffer solution that abrasive silicon dioxide, oxidizing agent ammonium dichromate, sodium carbonate and sodium bicarbonate form.

[0102] Substrate: a single crystal indium phosphide sheet with a diameter of 25.4mm and a surface roughness of 300nm;

[0103] Substrate carrier: made of ABS engineering plastics, with a diameter of 100mm and a thickness of 8mm;

[0104] The first electromagnetic coil and the second electromagnetic coil: both are electromagnetic coils with an inner diameter of 10 mm and an outer diameter of 100 mm.

[0105] The steps of the chemical mechanical polishing adopted in the present embodiment are as follows:

[0106] ...

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Abstract

The invention relates to the technical field of semiconductor processing, in particular to a chemical mechanical polishing method of non-mechanical contact magnetically induced in-situ ultrasonic vibration. The present invention adopts the chemical mechanical polishing liquid containing ferromagnetic particles, and sets periodic alternating magnetic fields covering the polishing surface area on the upper and lower sides of the surface to be polished of the base material, and acts on the polishing liquid through non-contact electromagnetic induction. The ferromagnetic particles make the ferromagnetic particles vibrate at high frequency, and at the same time drive the abrasive in the polishing liquid to act on the polishing surface. The invention solves some technical problems existing in the existing mechanical contact ultrasonic vibration assisted chemical mechanical polishing method, such as ultrasonic vibration needs to be transmitted to the polishing surface through mechanical contact, the structure is complex, the vibration transmission efficiency is low, and mechanical structure vibration is required Modal matching and more work.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a chemical mechanical polishing method of non-mechanical contact magnetically induced in-situ ultrasonic vibration. Background technique [0002] Surface precision polishing is an important key link in semiconductor technology and an important foundation for the development of modern high-tech industries and science and technology. Chemical mechanical polishing is a means of global planarization that has developed rapidly in integrated circuit manufacturing in recent years. Through chemical mechanical polishing, the surface of semiconductor devices can obtain a surface that is both flat and free of scratches and impurities. Chemical mechanical polishing is a technology that combines chemical action and mechanical action, which avoids the disadvantages of simple mechanical polishing that easily causes polishing surface damage and simple chemical polishing that eas...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/10B24B37/34B24B1/00B24B1/04C09G1/02
CPCB24B37/10B24B37/34B24B1/005B24B1/04C09G1/02
Inventor 张新宇
Owner 无锡兴华衡辉科技有限公司
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