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Energy storage film with high breakdown field strength and preparation method thereof

A high-breakdown and thin-film technology, which is applied to fixed capacitor components and fixed capacitor dielectrics, can solve problems such as low energy storage density, complex performance regulation process, and low breakdown field strength of energy storage films, reaching the annealing temperature The effect of reducing, simple process, and small interlayer stress

Active Publication Date: 2021-10-12
HARBIN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the technical problems of low breakdown field strength, complex performance control process and low energy storage density of the existing energy storage thin film, the present invention provides a new energy storage thin film structure and preparation method

Method used

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  • Energy storage film with high breakdown field strength and preparation method thereof
  • Energy storage film with high breakdown field strength and preparation method thereof
  • Energy storage film with high breakdown field strength and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] 1. Remove 2.5261g of lead acetate trihydrate (10% excess) in an oven at 125°C for 1 hour to remove crystal water, transfer it to an Erlenmeyer flask, then add 15.3ml of ethylene glycol methyl ether as a solvent, 2ml of acetic acid as a cosolvent, and magnetically Stir at 350r / min for 2h, then cool to room temperature, add 2.7ml of zirconium n-propoxide solution and continue stirring at 350r / min for 2h. Then filter with 0.22 μm pore filter paper and age for 24 hours to obtain 0.3 mol / L lead zirconate sol.

[0044] 2. Pt(111) / Ti / SiO after ultrasonic treatment for 15 minutes, acetone wiping, blast oven drying and heating at 400°C for 3 minutes to remove stress 2 / Si(100) substrate, drop 8-11 drops of the lead zirconate colloid obtained in step 1, and homogenize the colloid at a low speed of 800r / min for 15s, and thin the colloid at a high speed of 4000r / min for 10s to obtain a thickness of 60nm film, and then transfer the film to a flat heater and heat at 400°C for 5min t...

Embodiment 2

[0059] 1. Remove 1.79919 g of lead acetate trihydrate (10% excess) in an oven at 125° C. for 1 hour to remove crystal water, and transfer it to an Erlenmeyer flask. Add 11.6ml of ethylene glycol methyl ether as a solvent, 1ml of acetic acid as a co-solvent, magnetically stir at room temperature at 350r / min for 2h, then cool to room temperature, add 1ml of zirconium n-propoxide solution and 0.7ml of tetrabutyl titanate solution and continue to stir at 350r / min / min speed stirring for 2h. After filtering with 0.22 μm pore filter paper and aging for 24 hours, a 0.3 mol / L PZT sol was obtained.

[0060] 2. Pt(111) / Ti / SiO after ultrasonic treatment for 15 minutes, acetone wiping, blast oven drying and heating at 400°C for 3 minutes to remove stress 2 / Si(100) substrate, drop 8-11 drops of lead zirconate titanate colloid, and uniform glue at 800r / min low speed for 15s, thin the colloid at 4000r / min high speed for 10s, transfer to the flat heater for 400 Heat at ℃ for 5 min to remov...

Embodiment 3

[0064] 1. Remove 2.4755g of lead acetate trihydrate (10% excess) and 0.0520g of lanthanum nitrate in an oven at 125°C to remove crystal water for 1h, transfer them to a conical flask, add 15.3ml of ethylene glycol methyl ether as a solvent, and 2ml of acetic acid as an auxiliary Solvent, magnetically stir at room temperature at 350r / min for 2h, then cool to room temperature, add 2.7ml of zirconium n-propoxide solution and continue stirring at 350r / min for 2h. After filtering with 0.22 μm pore filter paper and aging for 24 hours, a 0.3 mol / L PLZO-2 sol was obtained.

[0065] 2. Pt(111) / Ti / SiO after ultrasonic treatment for 15 minutes in advance, acetone wiping, blast oven drying and heating at 400°C for 3 minutes to remove stress 2 / Si(100) substrate, drop 8-11 drops of lead zirconate colloid, and homogenize the colloid at a low speed of 800r / min for 15s, thin the colloid at a high speed of 4000r / min for 10s, and transfer to a flat heater at 400°C Heat for 5 min to remove solv...

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Abstract

The invention discloses an energy storage film with high breakdown field strength and a preparation method thereof, and belongs to the technical field of preparation of high-performance energy storage film materials. The invention aims to solve the technical problems that an existing prepared energy storage film is low in breakdown field strength, complex in performance regulation and control process, low in energy storage density and the like are solved. According to the energy storage film with high breakdown field strength and the preparation method thereof of invention, through a layered annealing mode, a polarization layer at a high annealing temperature is superposed with a pressure-resistant layer at a low annealing temperature, and the ferroelectric film with electrical properties is successfully prepared. Compared with existing solutions such as ion doping and annealing temperature regulation, the film structure design scheme greatly reduces the operation difficulty and energy consumption of the preparation process, is closer to industrial production and remarkably improves the energy storage density.

Description

technical field [0001] The invention relates to an energy storage thin film with high breakdown field strength and a preparation method thereof, belonging to the technical field of preparation of high-performance energy storage thin film materials. Background technique [0002] Dielectric capacitors have faster charge and discharge rates (ns) and higher power density (up to 108W / kg), which can meet the requirements of ultra-high power electronics and systems such as hybrid vehicles, medical defibrillators, and satellites. However, the further development and application of dielectric capacitors are severely limited by the low energy density. In recent years, due to the excellent characteristics of thin film materials such as small thickness, few defects, and moderate energy storage density, researchers have gradually shifted their attention from bulk materials to thin film materials. [0003] For dielectric capacitors such as antiferroelectric (AFE) materials, increasing th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/48C04B35/491C04B35/622C04B35/624C04B35/64H01G4/08
CPCC04B35/48C04B35/491C04B35/624C04B35/622C04B35/64H01G4/08C04B2235/3227C04B2235/96
Inventor 张永泉姚安权张昌海迟庆国张天栋冯宇张月
Owner HARBIN UNIV OF SCI & TECH
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