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Composite bond grinding wheel for large-size silicon carbide substrate processing and preparation method thereof

A technology of silicon carbide substrate and composite binder, which is applied in the direction of bonded grinding wheels, metal processing equipment, manufacturing tools, etc., to achieve good homogeneity, solve processing problems, and have strong grinding force

Active Publication Date: 2022-04-22
ZHENGZHOU RES INST FOR ABRASIVES & GRINDING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In summary, the purpose of the present invention is to provide a large-size silicon carbide substrate processing grinding wheel and its preparation method. The prepared grinding wheel has good self-sharpness, good isotropic uniformity, and can realize large-size silicon carbide substrates. Grinding processing requirements, related research has not been reported

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  • Composite bond grinding wheel for large-size silicon carbide substrate processing and preparation method thereof

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Effect test

Embodiment 1

[0032] A composite bond grinding wheel for large-size silicon carbide substrate processing, mainly used for processing large-size silicon carbide substrate materials, the grinding wheel is composed of a base body and a grinding layer, and the raw materials of the grinding layer are calculated by weight percentage. For: particle size 325 / 400, TTI76 diamond abrasive 25%, mixed powder 32%, polyphenylene sulfide 20%, zinc oxide whisker 15%, SG abrasive 8%.

[0033]The mixed powder is obtained through the following process: in terms of mass percentage, 62% of zinc powder, 18.2% of copper powder, 2.2% of aluminum powder, and 6.6% of iron powder are mixed with metal powder, and a high-frequency vibrating screen is used at 2000 times / min Vibrate for 30 minutes, then add 11% graphite, and then put the mixture into a liquid nitrogen cooling wall breaking machine with a rotation speed of 40,000rpm (manufacturer: Domon wall breaking machine model: LM-388, the same below), and the mass rati...

Embodiment 2

[0044] A composite bond grinding wheel for large-size silicon carbide substrate processing, mainly used for processing large-size silicon carbide substrate materials, the grinding wheel is composed of a base body and a grinding layer, and the raw materials of the grinding layer are calculated by weight percentage. For: particle size M34 / 42, TTI77.5 diamond abrasive 45%, mixed powder 25%, polyphenylene sulfide 8%, zinc oxide whisker 12%, SG abrasive 10%.

[0045] The mixed powder is obtained through the following process: in terms of mass percentage, 70% of zinc powder, 15% of copper powder, 0.5% of aluminum powder, and 1.5% of iron powder are used to vibrate at 2000 times / min for 10 min using a high-frequency vibrating sieve, and then Add 13% graphite, then put the mixture into a liquid nitrogen cooling wall breaker with a rotation speed of 20,000rpm, add liquid nitrogen with a mass ratio of 10% of the mixed powder, mix and refine for 2 hours, and obtain a mixture with a partic...

Embodiment 3

[0056] A composite bond grinding wheel for large-size silicon carbide substrate processing, mainly used for processing large-size silicon carbide substrate materials, the grinding wheel is composed of a base body and a grinding layer, and the raw materials of the grinding layer are calculated by weight percentage. For: particle size 270 / 325, TTI75.8 diamond abrasive 30%, mixed powder 40%, polyphenylene sulfide 10%, zinc oxide whisker 8%, SG abrasive 12%.

[0057] The mixed powder is obtained through the following process: in terms of mass percentage, 65% of zinc powder, 18% of copper powder, 2% of aluminum powder, and 6% of iron powder are used to vibrate at 2000 times / min for 15min by using a high-frequency vibrating sieve, and then Add 9% graphite, then put the mixture into a liquid nitrogen cooling wall breaker with a rotation speed of 30,000rpm, add liquid nitrogen with a mass ratio of 10% of the mixed powder, mix and refine for 5 hours, and obtain a mixture with a particle...

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Abstract

The invention discloses a composite bond grinding wheel for large-scale silicon carbide substrate processing and a preparation method thereof, in particular to a compound bond superhard material grinding wheel formula and a preparation method for silicon carbide semiconductor material processing. The formula mainly consists of the following components: 25-45% diamond abrasive, 25-40% pre-alloyed powder, 8-20% polyphenylene sulfide, 10-18% zinc oxide whisker, and 8-22% SG abrasive. The preparation of the invention adopts polyphenylene sulfide and zinc-copper alloy powder as a composite binder system, and the binder system has strong holding force on abrasives, resists high grinding resistance of large-sized silicon carbide, and has strong grinding force. Iron, aluminum, etc. refine the grain structure of the alloy system, increase the brittleness, and improve the grinding sharpness of the grinding wheel. At the same time, the use of whiskers can increase the isotropy of the microstructure of the grinding wheel layer, obtain a better homogeneous state, and solve the problem of grinding stability of silicon carbide substrates. It completely solves the problem of processing large-size silicon carbide substrates.

Description

technical field [0001] The invention belongs to the field of superhard abrasives, and in particular relates to a composite bond grinding wheel for processing large-size silicon carbide substrates and a preparation method thereof. [0002] technical background [0003] Wide bandgap semiconductor materials represented by silicon carbide have outstanding advantages such as higher saturation drift speed and higher critical breakdown voltage, and are suitable for high-power, high-temperature, high-frequency, and radiation-resistant applications. Countries around the world attach great importance to the research of SiC, and have invested a lot of manpower and material resources in active development. The United States, Europe, Japan, etc. have not only formulated corresponding research plans at the national level, but also some international electronics giants have also invested heavily in the development of SiC. Semiconductor device. Different from the low hardness and high britt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24D3/02B24D3/34B24D18/00B24D5/06B24D7/06
CPCB24D3/02B24D3/342B24D18/0009B24D18/0072B24D18/00B24D5/06B24D7/06
Inventor 王礼华赵延军张高亮左冬华钱灌文曹剑锋孙冠男
Owner ZHENGZHOU RES INST FOR ABRASIVES & GRINDING CO LTD
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