Polycrystalline silicon centrifugal directional solidification purification method and device
A technology of directional solidification and polysilicon, which is applied in the growth of polycrystalline materials, chemical instruments and methods, and single crystal growth, etc. It can solve the problems of energy consumption costs, difficulty in taking into account the purification efficiency, impurity that cannot be diffused quickly and uniformly, and restricts large-scale production applications, etc. problems, to achieve the effect of reducing the effective segregation coefficient of impurities, stabilizing the purification effect and enhancing the operation safety
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Embodiment 1
[0043] Using purity 2N grade industrial silicon as raw material, it is purified by centrifugal directional solidification.
[0044] (1) Put 200 kg of solid silicon material in the crucible body 6, raise the crucible to the main furnace chamber 11, open the vacuum system for gas replacement and vacuuming, fill in protective argon, maintain the furnace pressure at 10000-12000Pa, and open The power switch of the graphite heater 9, the furnace temperature rises to 1550°C and is maintained, and after the solid silicon material is completely melted, the heating power is reduced, and the furnace temperature is controlled to 1450-1480°C.
[0045] (2) Turn on the power supply of the wedge-shaped pulley rotating mechanism 20 of the cooling body 2, set the rotation speed to 30r / min, and pass a large flow of circulating refrigerant argon into the cooling body from the interface of the magnetic fluid sealing body 19, and turn on the main and auxiliary The two vacuum gate valves 23 between ...
Embodiment 2
[0052] Using purity 4N grade industrial silicon as raw material, it is purified by centrifugal directional solidification.
[0053] The process operation steps are the same as in Example 1, only the process parameter of the rotation speed of the cooling body 2 is changed, which is set to 60r / min.
[0054] Purified silicon materials S2a, S3a...S15a and S1b, S2b, S3b...S15b are obtained.
[0055] The purified silicon material obtained in this embodiment all reaches 7N grade purity through testing and testing, that is, the sum of Fe, Al, Ca, Cr, Ni, Cu, Zn metal impurities is less than 0.1 ppm.
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