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Porous GaN narrow-band ultraviolet photodiode and preparation method thereof

A technology of ultraviolet light and diodes, applied in circuits, electrical components, semiconductor devices, etc., to achieve the effects of improving light absorption, high conductivity, and reducing material defects

Pending Publication Date: 2021-12-03
WUYI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] All the above reports use the porous GaN layer as the DBR layer, and there is no report on the heterojunction high-performance narrow-band response ultraviolet detector using porous GaN as the active layer.

Method used

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  • Porous GaN narrow-band ultraviolet photodiode and preparation method thereof
  • Porous GaN narrow-band ultraviolet photodiode and preparation method thereof
  • Porous GaN narrow-band ultraviolet photodiode and preparation method thereof

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Embodiment 1

[0047] Such as figure 1 and 2 As shown, this embodiment provides a porous GaN narrowband ultraviolet photodiode, including a substrate layer 100, a semiconductor layer 200, a porous GaN layer 300, a CuZnS layer 400, and a metal contact layer 500. In this embodiment, the substrate layer 100 is a sapphire substrate layer, and the semiconductor layer 200 is arranged on the upper surface of the substrate layer 100. In this embodiment, the semiconductor layer 200 is a GaN thin film layer; and the carrier of the GaN thin film layer at room temperature The concentration range is 1×10 15 to 1×10 18 cm -3 , with a thickness of 4-6 μm. The semiconductor layer 200 is provided with a porous GaN layer 300 and a CuZnS layer 400 , and the upper surfaces of the porous GaN layer 300 and the CuZnS layer 400 are provided with a metal contact layer 500 . The CuZnS layer 400 described in this embodiment has a thickness of 30-100 nm. The metal contact layer 500 is an ohmic contact layer, and ...

Embodiment 2

[0049] This embodiment provides a method for preparing a porous GaN narrow-band ultraviolet photodiode, the method comprising:

[0050] S1), depositing a GaN thin film on the substrate layer 100, wherein the thickness of the deposited GaN thin film is 5000nm;

[0051] S2), cleaning the GaN film prepared in step S1), and etching a part of the GaN film with an ionic liquid to form a porous GaN layer 300;

[0052] S3), another part of the GaN thin film is used to form a CuZnS layer 400 on the surface with a water bath method, wherein the Cu component is 20%.

[0053] As preferred in this embodiment, in step S2), before etching the porous GaN layer 300, put GaN of 1.0 cm×0.3 cm in aqua regia to remove the passivation layer on the surface, take it out after five minutes; then use acetone, Ultrasonic cleaning of the GaN sheet in ethanol and deionized water, 30 minutes each time; followed by a hydrophilic treatment of the GaN sheet in an ultraviolet ozone cleaner to enhance the cont...

Embodiment 3

[0060] This embodiment provides a method for preparing a porous GaN narrow-band ultraviolet photodiode, the method comprising:

[0061] S1), depositing a GaN thin film on the substrate layer 100, wherein the thickness of the deposited GaN thin film is 5000nm;

[0062] S2), cleaning the GaN film prepared in step S1), and etching a part of the GaN film with an ionic liquid to form a porous GaN layer 300;

[0063] S3), another part of the GaN thin film is used to form a CuZnS layer 400 on the surface with a water bath method, wherein the Cu component is 10%.

[0064] As preferred in this embodiment, in step S2), before etching the porous GaN layer 300, put GaN of 1.0 cm×0.3 cm in aqua regia to remove the passivation layer on the surface, take it out after five minutes; then use acetone, Ultrasonic cleaning of the GaN sheet in ethanol and deionized water, 30 minutes each time; followed by a hydrophilic treatment of the GaN sheet in an ultraviolet ozone cleaner to enhance the cont...

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Abstract

The invention provides a porous GaN narrow-band ultraviolet photodiode and a preparation method thereof. The porous GaN narrow-band ultraviolet photodiode comprises a substrate layer, a semiconductor layer arranged on the substrate layer, a porous GaN layer, a CuZnS layer, metal contact layers, wherein the porous GaN layer and the CuZnS layer are arranged on the upper surface of the semiconductor layer, and the metal contact layers are respectively arranged on the upper surfaces of the porous GaN layer and the CuZnS layer. According to the preparation method of the invention, a GaN film is deposited on a substrate layer; the GaN film is cleaned, and a part of the GaN film is etched by using ionic liquid to form a porous GaN layer; and a CuZnS layer is prepared on the surface of the other part of the GaN film by using a water bath method. According to the porous GaN narrow-band ultraviolet photodiode and the preparation method thereof of the invention, the porous GaN material is used as an ultraviolet light absorption layer, so that the light absorption is improved and the material defect is reduced; the P-type transparent and high-conductivity film CuZnS utilized by the method of the invention has high transmittance of ZnS and high conductivity of CuS; and the half-peak width of the porous GaN narrow-band ultraviolet photodiode is only 5 nm, the ultraviolet response wave band is 362-380 nm, and the porous GaN narrow-band ultraviolet photodiode has high detection rate and is suitable for weak-light narrow-band spectrum detection.

Description

technical field [0001] The invention relates to the technical field of photodiodes, in particular to a porous GaN narrow-band ultraviolet photodiode and a preparation method thereof. [0002] technical background [0003] In the field of military applications, the use of ultraviolet detection technology can realize short-distance confidential communication, missile early warning with low false alarm rate, etc.; in the civil field, the use of ultraviolet detection technology can realize environmental monitoring, flame detection, etc. At present, relatively mature ultraviolet detection devices mainly include silicon-based ultraviolet detectors and photomultiplier tubes. Photomultiplier tubes have high sensitivity, but vacuum devices are bulky and require high voltage operation; silicon-based ultraviolet photodetectors require additional filters. Therefore, they all have certain limitations in their work. Wide-bandgap semiconductor ultraviolet detectors are small in size, do n...

Claims

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Application Information

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IPC IPC(8): H01L31/0304H01L31/0224H01L31/102H01L31/18
CPCH01L31/03044H01L31/022408H01L31/102H01L31/1852H01L31/1856
Inventor 宋伟东郭越吴明建梁众林显凯陈钊高岩张业龙何鑫
Owner WUYI UNIV
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