Cleaning method for semiconductor materials

Abstract

The invention relates to a cleaning method for semiconductor materials. The specific steps are as follows: first immerse the semiconductor material in an alkaline degreasing lotion for degreasing treatment, and then rinse it with deionized water; then perform metal ion removal treatment, and sequentially wash the semiconductor material Soak and clean with acidic lotion A, rinse with deionized water after cleaning; then soak and clean with neutral lotion, rinse with deionized water after cleaning; finally soak in acidic B lotion for cleaning, rinse with deionized water after cleaning That's it. The cleaning method provided by the invention greatly reduces the use concentration of strong acid, reduces environmental pollution and corrosivity to human body. The lotion has good stability, does not easily decompose and volatilize, improves the service life of the lotion, is less corrosive to silicon products, and does not increase the Ra of the product after cleaning.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and relates to a cleaning method for semiconductor materials. Background technique [0002] In the manufacturing process of semiconductor devices such as flat panel displays such as TFT liquid crystals, microprocessors, memories, and CCDs, silicon, silicon oxide (SiO 2 ), glass, etc., the surface of the substrate is patterned or formed into a thin film with a size of submicron or even 1 / 4 micron. Therefore, in these manufacturing processes, it is extremely important to remove the tiny contamination on the surface of the substrate to make the surface of the substrate highly clean; the same equipment consumables also need to be highly cleaned, and the control of particulate matter in semiconductor engineering is the key point. Objects, the products used in the project should be cleaned by the cleaning process to remove the factors that affect the particulate matter. With the devel...

AI Technical Summary

Problems solved by technology

Soaking and cleaning is carried out in a strong acid mixture, and APM is used to remove particles, some organic matter and some metals on the surface of the silicon wafer, but this solution will increase the roughness of the silicon wafer surface

HPM and DHF are used to remove metal contamination on the surface of silicon wafers, but HPM uses high-concentration strong acid, which is easy to decompose and volatilize. It has poor stability during use, low service life, and rapid failure of solution cleaning ability.

Therefore, the currently used RCA cleaning process needs to use a lot of chemical reagents that are not friendly to the environment. If used in large quantities, the damage to the environment will be serious

And according to the research report, the SC1 solution can effectively remove the particles on the surface of the semiconductor silicon body, but at the same time it brings another source of foreign metal impurities, such as iron, zinc and aluminum, etc.

Although the SC1 solution can basically remove particles with a particle size larger than 0.5 μm on the surface of the silicon body, it increases the deposition of particles with a particle size smaller than 0.5 μm.

Images