Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-purity water-soluble silicon wafer cleaning agent and preparation method thereof

A silicon wafer cleaning agent, water-soluble technology, applied in the direction of surface-active detergent composition, detergent compounding agent, detergent composition, etc., can solve the problems of reduced yield and silicon wafer pits, etc., to prevent corrosion, The safety is guaranteed and the effect of improving the cleaning effect

Pending Publication Date: 2022-04-12
SHANGHAI CHEM REAGENT RES INST
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The alkaline component of this patented product is corrosive to silicon wafers, resulting in pits on the surface of silicon wafers, which is a fatal defect for the quality of silicon wafers, especially high-end silicon wafers, and may result in lower yields during post-processing.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-purity water-soluble silicon wafer cleaning agent and preparation method thereof
  • High-purity water-soluble silicon wafer cleaning agent and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Start stirring, respectively pump 140kg of fatty alcohol polyoxyethylene ether ammonium sulfate (AESA), 160kg of acrylic acid copolymer and 60kg of PEG-400 into a 2000L stainless steel reaction kettle with a vacuum pump, open the steam valve and heat at 40-60°C, and wait for the pumped raw materials After complete melting, stop heating, then add 700kg of conductive water with a resistivity of 1M, perform ion exchange after stirring fully, and store the ion-exchanged liquid in a 2000-liter plastic storage tank. Sampling analysis. The density, PH, viscosity, metal impurities and other indicators of the finished product are all within the control index range. After the analysis is qualified, 500kg of 35% formaldehyde is added, and then filtered with a 0.5μm filter membrane, and the finished product is sampled again for analysis, and 25kg / barrel is filled.

Embodiment 2

[0024] Start stirring, respectively pump 80kg fatty alcohol polyoxyethylene ether sodium sulfate, 120kg acrylamide polymer and 30kg PEG-600 into a 2000L stainless steel reaction kettle with a vacuum pump, open the steam valve and heat at 40-60°C until the pumped raw materials are completely melted Finally, stop heating, then add 470kg of conductive water with a resistivity of 1.5M, and perform ion exchange after stirring fully. The liquid after ion exchange is stored in a 2000-liter plastic storage tank. Sampling analysis. The density, PH, viscosity, metal impurities and other indicators of the finished product are all within the control index range. After the analysis is qualified, 300kg of 35% formaldehyde is added, and then filtered with a 0.5μm filter membrane, and the finished product is sampled again for analysis, and 25kg / barrel is filled.

Embodiment 3

[0026] Start stirring, respectively pump 50kg of nonylphenol polyoxyethylene ether (TX-10), 150kg of vinyl alcohol polymer and 50kg of PEG-200 into a 2000L stainless steel reaction kettle with a vacuum pump, open the steam valve and heat at 40-60°C, etc. After the raw materials are completely melted, stop heating, then add 450kg of conductive water with a resistivity of 1.5M, stir well and perform ion exchange, and store the ion-exchanged liquid in a 2000-liter plastic storage tank. Sampling analysis. The density, PH, viscosity, metal impurities and other indicators of the finished product are all within the control index range. After the analysis is qualified, 300kg of 35% formaldehyde is added, and then filtered with a 0.5μm filter membrane, and the finished product is sampled again for analysis, and 25kg / barrel is filled.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a high-purity water-soluble silicon wafer cleaning agent and a preparation method thereof. The high-purity water-soluble silicon wafer cleaning agent comprises the following components in percentage by weight: 5-10% of a surfactant, 5-15% of a polymer builder, 1-5% of a cosolvent, 25-40% of a reinforcing agent and 35-50% of high-purity water. Compared with the prior art, the primer provided by the invention has the advantages of low VOC content, fast paint film dryness, good toughness, excellent early water resistance and excellent corrosion resistance, and in addition, the cleaning agent provided by the invention is mainly used for cleaning and wiping a polished silicon wafer, and mainly removes a lubricant, dust and other dirt on the surface of the silicon wafer in the processing process. The cleaning agent is nontoxic, harmless, safe and pollution-free.

Description

technical field [0001] The invention belongs to the technical field of chemical industry, and in particular relates to a high-purity water-soluble silicon wafer cleaning agent and a preparation method thereof, which are mainly used for cleaning and wiping silicon wafers after polishing, and are mainly used for removing lubricant and dust contaminated on the surface of silicon wafers during processing and other dirt. It is a non-toxic, harmless, safe and non-polluting cleaning agent. Background technique [0002] The substrates of solar panels and various electronic product chips are monocrystalline silicon wafers. Monocrystalline silicon wafers are cut and processed from single crystal silicon. After cutting, they need to be polished. During the polishing process, lubricants, etc. are required. Substances, its composition includes organic substances and inorganic substances, in order to ensure that the cleanliness of the silicon wafer meets the requirements of subsequent pr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C11D1/29C11D1/72C11D3/60C11D3/37C11D3/22C11D3/20
Inventor 张传好周励纪招君
Owner SHANGHAI CHEM REAGENT RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com