Method for manufacturing conductive substrate, and conductive substrate
A technology of conductive substrates and manufacturing methods, which is applied in the fields of printed circuit manufacturing, cable/conductor manufacturing, and reinforcement of conductive patterns. It can solve problems such as difficult electrolytic plating treatment, and achieve high aperture ratio and high transmittance.
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Embodiment 1
[0352] (Production of Conductive Pattern Precursor 1)
[0353] As a support, a polyethylene terephthalate film having a thickness of 38 μm (total light transmittance: 92%) having easy-adhesion layers containing polyvinyl alcohol on both sides of the support was used. The film width was set at 500 mm, and the film length was set at 1000 m. A palladium sulfide sol having the composition shown below was prepared, and using the palladium sulfide sol, a coating liquid for the base layer 1 shown below was prepared. In the coating device, reverse rotation was performed using a diagonal gravure roll with a diameter of 60 mm, a slope angle of 45°, a line count of 90 lines / inch, and a groove depth of 110 μm, and a machine with light contact was used for coating. The coating device of the coating head is to apply the coating liquid of the base layer 1 on the easy-adhesive layer of the polyethylene terephthalate film having the above-mentioned easy-adhesive layer, dry it, and wind it int...
Embodiment 2～ Embodiment 9
[0381] In Example 2, it was the same as in Example 1 except that the contact time was set to 55 seconds and the number of plating treatments was set to two.
[0382] In Example 3, it was the same as in Example 1 except that the contact time was set to 25 seconds and the number of plating treatments was set to four.
[0383] Example 4 is the same as Example 1 except that the line width is adjusted to 1.0 μm by adjusting the line width opening of the exposure mask and adjusting the exposure amount.
[0384] In Example 5, the contact time was set to 55 seconds, the number of plating treatments was set to 2 times, and the line width was adjusted by adjusting the line width opening of the exposure mask and the adjustment of the exposure amount, and the line width was set to 1.0 μm, except for these points, it is the same as in Example 1.
[0385] In Example 6, the line width was adjusted to 2.0 μm by adjusting the line width opening of the exposure mask and adjusting the exposure ...
Embodiment 10
[0390] (Preparation of silver halide emulsion)
[0391] To the following 1 solution maintained at 38°C and pH 4.5, while stirring 1 solution, 90% of each of the following 2 and 3 solutions were added at the same time over 20 minutes to form a 0.16 μm nucleus particle. Next, the following solutions 4 and 5 were added to the obtained solution over 8 minutes, and the remaining 10% of the following solutions 2 and 3 were added over 2 minutes to grow the core particles to 0.21 μm. Then, 0.15 g of potassium iodide was added to the obtained solution, followed by aging for 5 minutes to complete particle formation.
[0392] 1 liquid:
[0393]
[0394] 2 fluids:
[0395] water 300ml
[0396] Silver nitrate 150g
[0397] 3 fluids:
[0398]
[0399] 4 fluids:
[0400] water 100ml
[0401] Silver nitrate 50g
[0402] 5 fluids:
[0403]
[0404] Then, water washing was performed by a flocculation method according to a conventional method. Specifically, the temperature of...
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Abstract
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