Photoelectrode material based on InGaN/organic heterostructure and preparation method and application thereof

A technology of heterostructures and organic materials, applied in the field of InGaN nanopillars, can solve problems such as slow oxidation reaction kinetics, and achieve the effects of promoting separation and transport properties, improving optoelectronic properties, and promoting production and transport.

Pending Publication Date: 2022-05-27
SOUTH CHINA UNIV OF TECH
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  • Abstract
  • Description
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Problems solved by technology

However, the rapid recombination of bulk and surface charges of InGaN nanopillars and th

Method used

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  • Photoelectrode material based on InGaN/organic heterostructure and preparation method and application thereof
  • Photoelectrode material based on InGaN/organic heterostructure and preparation method and application thereof
  • Photoelectrode material based on InGaN/organic heterostructure and preparation method and application thereof

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[0033] Example 1

[0034] The construction and application of a photoelectrochemical hydrogen production system based on InGaN / organic heterostructure photoelectrode material without bias voltage, comprising the following steps:

[0035] (1) Selection of substrate: n-type Si is used as the substrate (conductivity < 0.005Ω).

[0036] (2) Photocathode preparation: Then, the molecular beam epitaxy growth process was adopted, the substrate temperature was controlled to be 900 °C, the substrate rotation speed was 10 r / min, and the equivalent pressure of the Ga beam was 1×10 -7 Torr, In beam equivalent pressure is 2.0×10 -7 Torr, the nitrogen flow rate is 2sccm, the plasma source power is 400W, and the growth time is 3h. InGaN nanopillars are grown on the Si substrate. Among them, InGaN nanopillars account for 20% of In atoms, and the height of the nanopillars is 100-400nm. The diameter is 60~90nm, the density is 100~300μm -2 . The organic material IT-4F was deposited on the InG...

Example Embodiment

[0040] Example 2

[0041] The construction and application of a photoelectrochemical hydrogen production system based on InGaN / organic heterostructure photoelectrode material without bias voltage, comprising the following steps:

[0042] (1) Selection of substrate: n-type Si is used as the substrate (conductivity < 0.005Ω).

[0043] (2) Photocathode preparation: Then, the molecular beam epitaxy growth process was adopted, the substrate temperature was controlled to be 900 °C, the substrate rotation speed was 10 r / min, and the equivalent pressure of the Ga beam was 1×10 -7 Torr, In beam equivalent pressure is 2.0×10 -7 Torr, the nitrogen flow rate is 2sccm, the plasma source power is 400W, and the growth time is 3h. InGaN nanopillars are grown on the Si substrate. Among them, InGaN nanopillars account for 20% of In atoms, and the height of the nanopillars is 100-400nm. The diameter is 60~90nm, the density is 100~300m -2 . The organic material IT-4F was deposited on the InGa...

Example Embodiment

[0047] Example 3

[0048] The construction and application of a photoelectrochemical hydrogen production system based on InGaN / organic heterostructure photoelectrode material without bias voltage, comprising the following steps:

[0049] (1) Selection of substrate: n-type Si is used as the substrate (conductivity < 0.005Ω).

[0050] (2) Photocathode preparation: Then, the molecular beam epitaxy growth process was adopted, the substrate temperature was controlled to be 900 °C, the substrate rotation speed was 10 r / min, and the equivalent pressure of the Ga beam was 1×10 -7 Torr, In beam equivalent pressure is 2.0×10 -7 Torr, the nitrogen flow rate is 2sccm, the plasma source power is 400W, and the growth time is 3h. InGaN nanopillars are grown on the Si substrate. Among them, InGaN nanopillars account for 20% of In atoms, and the height of the nanopillars is 100-400nm. The diameter is 60~90nm, the density is 100~300m -2 . The organic material IT-4F was deposited on the InGa...

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Abstract

The invention discloses a photoelectrode material based on an InGaN/organic heterostructure as well as a preparation method and application of the photoelectrode material. The photoelectrode material comprises a Si substrate, an InGaN nano column arranged on the Si substrate, and an organic material layer arranged on the upper surface of the InGaN nano column, and the organic material layer is a non-fullerene material layer. The organic material IT-4F is used, so that the absorption spectrum range of the photoelectrode material is widened, surface charge recombination is effectively passivated, meanwhile, dissociation and transmission of charge carriers and reduction reaction of the charge carriers on an electrode/electrolyte interface are promoted through a heterostructure formed by the organic material IT-4F and the InGaN nanorods, and the photoelectric conversion efficiency is greatly improved; therefore, hydrogen production by photoelectrochemical water decomposition without bias voltage is realized, and an effective strategy is provided for efficiently converting solar energy into hydrogen energy.

Description

technical field [0001] The invention relates to the field of InGaN nano-pillars, in particular to an InGaN / organic heterostructure-based photoelectrode material and a preparation method and application thereof. Background technique [0002] Unbiased photoelectrochemical water splitting for hydrogen production shows great potential in solving the global energy crisis and environmental problems. InGaN nanopillars with tunable band gap (E g 0.65eV~3.4eV), the light absorption can be adjusted by adjusting the indium composition, thus becoming an ideal candidate for photoelectrodes. Moreover, InGaN nanopillars have suitable band positions for water redox reactions, long charge diffusion distances, high electron mobility, high specific surface area, and outstanding theoretical solar-to-hydrogen (STH) efficiency (~27%) ), making the InGaN nanopillars beneficial for photoelectrochemical total water splitting. However, the fast recombination of bulk and surface charges and slow ox...

Claims

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Application Information

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IPC IPC(8): C25B11/095C25B11/059C25B11/054C25B1/04C25B1/55C30B29/40C30B29/66C30B25/18
CPCC25B11/095C25B11/059C25B11/054C25B1/04C25B1/55C30B29/403C30B29/66C30B25/186Y02P20/133Y02E60/36
Inventor 李国强谢少华刘乾湖梁杰辉
Owner SOUTH CHINA UNIV OF TECH
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