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Lead-free perovskite material and preparation method and application thereof

A technology of perovskite and titanium, which is applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, antimony compounds, etc., can solve the problems of low device efficiency and solar cell device efficiency, and achieve good switching response repeatability, Solve toxicity and stability problems, good stability effect

Pending Publication Date: 2022-05-31
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the field of solar cells, the efficiency of solar cell devices prepared by antimony-based perovskite materials is not high, and the highest device efficiency reported so far is based on Rb 0.15 Cs 2.85 Sb 2 Cl x I 9-x The solar cell with perovskite layer has an efficiency of only 2.46%. The low device efficiency shows that there is still great room for development of antimony-based perovskite solar cells.

Method used

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  • Lead-free perovskite material and preparation method and application thereof
  • Lead-free perovskite material and preparation method and application thereof
  • Lead-free perovskite material and preparation method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0037] Lead-free perovskite material Cs 3 Sb 1.8 Bi 0.2 I 7.6 Cl 1.4 Preparation of the film:

[0038]Cut ITO transparent conductive glass with a size of 20 × 20mm with a glass knife, and then ultrasonically clean the cut ITO transparent conductive glass substrate with glass cleaner, deionized water, isopropanol, and ethanol, and then blow it with nitrogen. Dry, followed by UV ozone treatment to improve the wettability and cleanliness of the ITO glass surface. Configure 0.6mol / L non-lead perovskite precursor solution, the concentration is calculated as the sum of bismuth and antimony content, specifically including solute cesium iodide, antimony iodide, bismuth iodide, antimony chloride, the concentration is 0.90mol / L respectively , 0.40mol / L, 0.06mol / L, 0.14mol / L, the solvent is dimethyl sulfoxide (DMSO), and it is stirred at room temperature to dissolve it completely. The precursor solution was deposited on the ITO substrate using a spin coater (KW-4A type desktop spin...

Embodiment 2

[0040] Based on lead-free perovskite material Cs 3 Sb 1.8 Bi 0.2 I 7.6 Cl 1.4 Thin-film photovoltaic devices:

[0041] Cut the FTO transparent conductive glass with a size of 20×20mm with a glass knife, and then ultrasonically clean the cut FTO transparent conductive glass substrate with glass cleaning agent, deionized water, isopropyl alcohol, and ethanol, and dry it with nitrogen. , followed by UV ozone treatment to improve the wettability and cleanliness of the FTO glass surface. An electron transport layer titanium dioxide is then deposited on the surface of the FTO. The configuration of the perovskite precursor is the same as in Example 1. 50μl of the prepared precursor solution was spin-coated on the ITO or FTO glass deposited with the electron transport layer using a spin coater. In the auxiliary equipment (DL-10A quartz vacuum gauge and vacuum pump), low-pressure (vacuum degree of 10Pa) treatment is carried out for 60 seconds to make the solvent volatilize quick...

Embodiment 3

[0043] Based on lead-free perovskite material Cs 3 Sb 1.8 Bi 0.2 I 7.6 Cl 1.4 The thin film photodetector:

[0044] Cut ITO transparent conductive glass with a size of 20 × 20 mm with a glass knife, and then ultrasonically clean the cut ITO transparent conductive glass substrate with glass cleaning agent, deionized water, isopropyl alcohol, and ethanol, and blow it with nitrogen. Dry, followed by UV ozone treatment to improve the wettability and cleanliness of the ITO glass surface. Then the hole transport layer nickel oxide nanoparticles were deposited on the surface of ITO. The configuration of the perovskite precursor is the same as in Example 1. 50 μl of the prepared precursor solution was spin-coated on the ITO glass deposited with the hole transport layer using a spin coater. The spin speed of the spin coater was 4000 rmp and the spin time was 30 seconds. In the equipment (DL-10A quartz vacuum gauge and vacuum pump), a low-pressure (vacuum degree of 10Pa) treatmen...

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Abstract

The invention relates to a non-lead perovskite material and a preparation method and application thereof. The structural general formula of the non-lead perovskite material is Cs3Sb2-xBixA9-yBy, and A and B are F, Cl, Br or I; 0 < x < = 0.8, and 0 < y < = 5. The material can also contain an additive. According to the preparation method, a solution method is combined with a low-pressure auxiliary treatment method, so that the compact and flat high-quality non-lead perovskite thin film is prepared. The preparation method is efficient, the preparation process is simple, the prepared material is low in toxicity and good in stability, and the non-lead perovskite material obtained on the basis of the method can be applied to the fields of multiple photoelectric functional devices such as solar cells, photoelectric detectors and radiation detectors.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic materials and devices, and particularly relates to a non-lead perovskite material, a preparation method of the material, and the application of the material in photovoltaic devices and photodetectors. Background technique [0002] Organic-inorganic hybrid perovskite materials have attracted extensive research due to their excellent photophysical properties, including their own structure, optoelectronic properties, and their applications in various optoelectronic devices, such as photovoltaic devices. , light-emitting diodes, photodetectors, and transistors. Among them, as a photovoltaic device, its photoelectric conversion efficiency has reached 25.7%, which is close to the efficiency of single crystal silicon cells, showing great application prospects; as a light-emitting diode, its external quantum efficiency of red light and green light has broken through. 20%; as a photodetector, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G30/00H01L51/42H01L51/46
CPCC01G30/003C01P2004/03C01P2002/72C01P2002/85C01P2006/40H10K30/00Y02E10/549
Inventor 吴存存张亚飞张贤李日郑士建
Owner HEBEI UNIV OF TECH
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