Unlock instant, AI-driven research and patent intelligence for your innovation.

Infrared metallization all-pass sapphire window and preparation method and application thereof

A metallization and sapphire technology, which is applied in the coating process of metal materials, instruments, optical components, etc., can solve problems such as the need to improve the anti-reflection level, narrow infrared anti-reflection spectrum, and limit the application range, so as to improve the anti-reflection spectrum segment and transmittance, increase welding reliability, good anti-reflection effect

Pending Publication Date: 2022-07-29
WUXI HONGRUI AEROSPACE MECHANICAL & ELECTRICAL EQUIP CO LTD
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The transmittance of the optical film provided by the above scheme is low in the near-infrared spectrum, only about 80%, which greatly limits its application range. Therefore, the current sapphire window infrared anti-reflection spectrum is generally narrow, and the anti-reflection level Need to be improved, and the level of metallization needs to be further improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Infrared metallization all-pass sapphire window and preparation method and application thereof
  • Infrared metallization all-pass sapphire window and preparation method and application thereof
  • Infrared metallization all-pass sapphire window and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] The present embodiment provides an infrared metallized all-pass sapphire window, and the preparation method of the infrared metallized all-pass sapphire window is as follows:

[0033] (1) Using sapphire as the base, use a vacuum cleaner to remove impurities in the vacuum chamber, wipe the inner wall of the vacuum chamber with a degreased gauze dipped in absolute ethanol, and then use anhydrous acetone and anhydrous ethanol to microwave the substrate for 15 minutes respectively, and use absorbent cotton. Wipe the substrate clean, and alternately deposit SiO layer by layer on both sides of the substrate by PVD evaporation 2 Coating and Ti 2 O 3 The film layer forms an optical film, and the outer edge of the optical film is provided with a blank area, and the thickness of the film layer is as follows:

[0034]

[0035]

[0036] The width of the blank area is 0.1mm, and the schematic diagram of the structure of the optical film on the substrate is as follows figur...

Embodiment 2

[0039] The present embodiment provides an infrared metallized all-pass sapphire window, and the preparation method of the infrared metallized all-pass sapphire window is as follows:

[0040] (1) Using sapphire as the substrate, use a vacuum cleaner to remove impurities in the vacuum chamber, wipe the inner wall of the vacuum chamber with a degreased gauze dipped in absolute ethanol, and then use anhydrous acetone and anhydrous ethanol to microwave the substrate for 15 minutes respectively, and use absorbent cotton. Wipe the substrate clean, and alternately deposit SiO layer by layer on both sides of the substrate by PVD evaporation 2 Coating and Ti 2 O 3 The film layer forms an optical film, and the outer edge of the optical film is provided with a blank area, and the thickness of the film layer is as follows:

[0041]

[0042]

[0043] The width of the blank area is 0.15mm;

[0044] (2) Cover the optical film with the protective film, use the DC magnetron sputtering ...

Embodiment 3

[0046] The present embodiment provides an infrared metallized all-pass sapphire window, and the preparation method of the infrared metallized all-pass sapphire window is as follows:

[0047] (1) Using sapphire as the substrate, use a vacuum cleaner to remove impurities in the vacuum chamber, wipe the inner wall of the vacuum chamber with a degreased gauze dipped in absolute ethanol, and then use anhydrous acetone and anhydrous ethanol to microwave the substrate for 15 minutes respectively, and use absorbent cotton. Wipe the substrate clean, and alternately deposit SiO layer by layer on both sides of the substrate by PVD evaporation 2 Coating and Ti 2 O 3 The film layer forms an optical film, and the outer edge of the optical film is provided with a blank area, and the thickness of the film layer is as follows:

[0048] layers film material Film thickness / nm 1 SiO 2

206 2 Ti 2 O 3

285 3 SiO 2

107 4 Ti 2 O 3

23 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Average transmittanceaaaaaaaaaa
Login to View More

Abstract

The invention provides an infrared metallization all-pass type sapphire window and a preparation method and application thereof.The infrared metallization all-pass type sapphire window comprises a sapphire substrate, a metal film and an optical film, the metal film and the optical film are arranged on the surface of the sapphire substrate, and the metal film is arranged on the outer edge of the optical film in the circumferential direction; the film system structure of the optical film is (0.6 h 1.2 l 0.6 h) 5. The optical film of the special film system is adopted, the anti-reflection effect is good, the anti-reflection spectrum section and the transmissivity of the window piece in the near-infrared spectrum section are greatly improved, under the condition that the transmissivity of the window piece is not affected, window piece edge metallization is achieved, the welding reliability of the window piece is improved, and the service life of the window piece is prolonged. Therefore, the device can be combined with a chip more flexibly and applied to various detectors and other application scenes.

Description

technical field [0001] The invention belongs to the technical field of optical film preparation, and relates to an infrared metallized all-pass sapphire window and a preparation method and application thereof. Background technique [0002] Short-wave infrared detection occupies an important position in infrared detection. Short-wave infrared can provide information that visible light, low-light night vision, medium-wave and long-wave infrared cannot provide. Short-wave infrared imaging has the advantages of high sensitivity, high resolution, day and night imaging, and no need for low-temperature refrigeration. [0003] SWIR imaging is used in a wide variety of different applications, including electronic board inspection, solar cell inspection, production inspection, identification and sequencing, monitoring, anti-counterfeiting, process quality control, and more. At present, the infrared antireflection spectrum of sapphire windows is generally narrow, the antireflection le...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G02B1/115C23C14/04C23C14/08C23C14/10C23C14/18C23C14/24C23C14/35
CPCG02B1/115C23C14/24C23C14/10C23C14/083C23C14/35C23C14/185C23C14/04
Inventor 王济洲陆春王小军王云飞陈学康许斌周玲陈昱翰马林
Owner WUXI HONGRUI AEROSPACE MECHANICAL & ELECTRICAL EQUIP CO LTD