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Impurity gas adsorbent as well as preparation method and application thereof

A technology for impurity gas and adsorbent, which is applied in the field of impurity gas adsorbent and its preparation, can solve problems such as poor adsorption effect, and achieve the effects of prolonging service life, improving purity and simple use method.

Active Publication Date: 2022-08-09
DALIAN KELIDE OPTOELECTRONICS MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The present invention is to overcome the defect that the impurity gas adsorbent in the prior art has a poor adsorption effect on the impurity gas in diborane, and provides a kind of impurity gas adsorbent and its preparation method and application to overcome the above defects

Method used

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  • Impurity gas adsorbent as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] A kind of impurity gas adsorbent, its preparation method comprises the following steps:

[0064] (1) Dissolve 10g of magnesium oxide, 0.5g of manganese oxide and 100g of tetraethoxysilane in 100ml of 50% ethanol solution, adjust the pH value to 1~2 with hydrochloric acid after mixing evenly, and stir and hydrolyze under reflux for 3h, the reaction ends, The solvent is evaporated to obtain a silica gel coated with an oxide or hydroxide of an alkaline earth metal and a transition metal compound;

[0065] (2) The above-mentioned silicone gel is foamed by a supercritical carbon dioxide foaming method, and the specific steps are as follows:

[0066] The above-mentioned silica gel was placed in a high-pressure reactor, firstly purged with supercritical fluid to remove air, then heated to 75°C, and then injected with carbon dioxide fluid, so that its saturation pressure was 10-15MPa, and the saturation time was 3h, and then it was quickly vented. Press and place in an ice-wat...

Embodiment 2

[0073] The steps of Example 2 and Example 1 are basically the same, except that the amount of manganese oxide added is 0.1 g.

Embodiment 3

[0075] The steps of Example 3 and Example 1 are basically the same, except that the amount of manganese oxide added is 1 g.

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Abstract

The invention relates to the field of electronic special gas purification, in particular to an impurity gas adsorbent and a preparation method and application thereof, and the impurity gas adsorbent comprises a porous silicon dioxide skeleton; oxide or hydroxide of alkaline earth metal and a compound of transition metal are loaded on the surface of the porous silicon dioxide framework; the carbon layer is coated outside the porous silicon dioxide skeleton; ammonium salt is physically loaded outside the carbon layer. The porous silicon dioxide framework is loaded with the oxide or hydroxide of the alkaline earth metal and the transition metal compound, impurity gas in diborane can be adsorbed in a physical and chemical mode, the purity of diborane is effectively improved, and meanwhile the impurity gas adsorbent is simple in use method and low in cost. Meanwhile, the concentration of oxygen in the diborane subjected to simple adsorption treatment can reach ppb level.

Description

technical field [0001] The invention relates to the field of electronic special gas purification, in particular to an impurity gas adsorbent and a preparation method and application thereof. Background technique [0002] Diborane, chemical formula B 2 H 6 , belonging to inorganic compounds, is the simplest borane that can be separated at present, and its appearance is colorless gas at room temperature. It has many important uses in the chemical field and the semiconductor field. Among them, the semiconductor industry is an important downstream market for diborane. It can be used as a p-type dopant source in the semiconductor industry. [0003] Diborane can be used as a p-type doping source in the semiconductor industry. The industrial preparation method is usually to use sodium hydride and boron trifluoride as raw materials under vacuum conditions to react in an organic solvent to obtain crude products, and then pass Processes such as condensation and purification obtai...

Claims

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Application Information

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IPC IPC(8): B01J20/20B01J20/10B01J20/04B01J20/02B01J20/30B01J20/32B01D53/02C01B6/10
CPCB01J20/20B01J20/103B01J20/041B01J20/0222B01J20/0237B01J20/0244B01J20/0218B01J20/0211B01J20/0259B01J20/3085B01J20/3078B01J20/3231B01D53/02C01B6/10Y02P20/151
Inventor 赵毅刘颖冯凯李庆东
Owner DALIAN KELIDE OPTOELECTRONICS MATERIALS CO LTD
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