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Alkali-soluble photosensitive negative photoresist resin

A negative photoresist, alkali-soluble technology, applied in the field of photoresist, can solve problems such as surface corrosion, shortening resin development time, and large CD value

Pending Publication Date: 2022-08-09
JIANGSU AISEN SEMICON MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the thick film photoresist process, if the resin itself contains too many carboxylic acid or anhydride groups, the surface of the resin will be corroded when it is developed after exposure. This is because the developer is usually an alkaline aqueous solution. Easy to react with carboxylic acid in the resin structure
[0005] Therefore, aiming at the problem of "by increasing the content of methyl / acrylate monomers containing carboxyl groups or acid anhydride groups in the resin synthesis structure too much, the alkali solubility of the resin is improved and the development time of the resin is shortened, and the resin surface is prone to corrosion during development" , and aiming at the problem of "improving the photosensitivity of the resin by using a large amount of cross-linking agent, but it is easy to cause the CD value to become larger in the thick film photoresist process", it is necessary to provide a new alkali-soluble photosensitive negative photoresist Resin to solve the above problems

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033](1) add 15g 4-vinyl phenol, 17g methacrylic acid, 35g isobornyl methacrylate, 15g isobornyl acrylate, 18g hydroxy methacrylate in the four-necked flask equipped with condenser, thermometer and stirrer A mixed solution consisting of ethyl ester, 0.2 g of 2,4-diphenyl-4-methyl-1-pentene, 5 g of azobisisobutyronitrile (AIBN) and 150 g of propylene glycol methyl ether acetate (PGMEA) was added to The mixture was stirred with nitrogen gas for 1 h;

[0034] (2) Use a constant temperature oil bath to heat the above mixed solution, draw the nitrogen pipe out of the liquid surface, continue to pass nitrogen gas, open the condenser, and start the heating reaction when the internal temperature reaches 80 °C, and continue the reaction heating reaction for 4h;

[0035] (3) adding a solution consisting of 1 g of azobisisobutyronitrile and 35 g of propylene glycol methyl ether acetate (PGMEA) to the reaction solution, and continued heating for 3 h;

[0036] (4) Adjust the temperature ...

Embodiment 2

[0041] (1) Add 15g 4-vinylphenol, 17g methacrylic acid, 35g adamantane-1-yl methacrylate, 15g isobornyl acrylate, 18g methacrylate to the four-necked flask equipped with condenser, thermometer and stirrer A mixed solution of hydroxyethyl methacrylate, 0.2g 2,4-diphenyl-4-methyl-1-pentene, 5g azobisisoheptonitrile (AVBN) and 150g propylene glycol methyl ether acetate (PGMEA) , and nitrogen was introduced into the mixture to stir for 1 h;

[0042] (2) Utilize the constant temperature oil bath pot to heat the above-mentioned mixed solution, the oil bath temperature is set to 82°C, and the nitrogen pipe is withdrawn from the liquid surface, continue to pass nitrogen, and the heating reaction is timed until the internal temperature reaches 82°C;

[0043] (3) Timing at an internal temperature of 82° C., heating for 4 hours, adding a solution of 1 g azobisisoheptanenitrile and 35 g propylene glycol methyl ether acetate (PGMEA) to the reaction solution, and continuing to heat for 3 ho...

Embodiment 3

[0049] (1) Add 15g 4-vinylphenol, 17g methacrylic acid, 35g cyclopentyl methacrylate, 15g isobornyl acrylate, 18g hydroxymethacrylate to the four-necked flask equipped with condenser, thermometer and stirrer A mixed solution consisting of ethyl ester, 0.2 g of 2,4-diphenyl-4-methyl-1-pentene, 2 g of azobisisobutyronitrile (AIBN) and 150 g of ethylene glycol methyl ether, and mixed Nitrogen was introduced into the liquid and stirred for 1 h;

[0050] (2) Utilize the constant temperature oil bath pot to heat the above-mentioned mixed solution, the oil bath temperature is set to 84 ℃, and the nitrogen pipe is drawn away from the liquid surface, continue to pass nitrogen, and the heating reaction is timed until the internal temperature reaches 84 ℃;

[0051] (3) Timing at an internal temperature of 82°C, heating and reacting for 3.5 hours, adding a solution consisting of 1 g of azobisisobutyronitrile and 35 g of ethylene glycol methyl ether to the reaction solution, and continuing...

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PUM

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Abstract

The invention discloses an alkali-soluble photosensitive negative photoresist resin, which comprises the preparation of an alkali-soluble negative photoresist resin and the preparation of the alkali-soluble photosensitive negative photoresist resin, the alkali-soluble negative adhesive resin is prepared by reaction and copolymerization of a phenolic hydroxyl monomer, a (methyl) acrylate monomer, (methyl) acrylic acid, a (methyl) acrylic hydroxyl monomer, an initiator, a solvent and a chain transfer agent. The alkali-soluble photosensitive negative adhesive resin is prepared by reaction of the alkali-soluble negative adhesive resin, glycidyl (meth) acrylate, a catalyst and a polymerization inhibitor. On one hand, a phenolic hydroxyl monomer with good alkali solubility and a (methyl) acrylate monomer are introduced to prepare alkali-soluble resin through copolymerization, on the other hand, a new idea of introducing polymerizable double bonds is explored, epoxy groups and carboxyl are utilized to catalyze ring opening, the resin is introduced into the polymerizable double bonds, the polymerizable double bonds and the epoxy groups are combined, and the purpose of preparing the alkali-soluble resin with the light sensitivity and the good alkali solubility is achieved. And the negative photoresist resin also has alkali solubility.

Description

【Technical field】 [0001] The invention relates to the technical field of photoresist, in particular to a photoresist removing solution with excellent coating and exposure performance. 【Background technique】 [0002] Photoresist (also known as photoresist) is a key material in the integrated circuit industry chain. It is a mixed solution mainly composed of film-forming resin, active monomer, photoinitiator, solvent and other auxiliary agents. According to the reaction mechanism, it is divided into two categories: positive photoresist and negative photoresist. Among them, the negative photoresist means that after exposure or radiation by ultraviolet light, the exposed area is cross-linked and insoluble in the developing solution, while the non-exposed area is not cross-linked and is soluble in the developing solution. The difference in the solubility of the resin before and after exposure, form the desired pattern. [0003] In the production process of negative photoresist,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08F220/18C08F212/14C08F220/06C08F220/20C08F212/32C08F8/14G03F7/004G03F7/038
CPCC08F220/1811C08F220/1805C08F8/14G03F7/004G03F7/038C08F212/24C08F220/06C08F220/20C08F212/32
Inventor 刘佳张威张望军向文胜张兵赵建龙
Owner JIANGSU AISEN SEMICON MATERIAL CO LTD
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