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Chemical amplification photo resist composition

A chemical amplification and photoresist technology, applied in optics, optomechanical equipment, photosensitive materials for optomechanical equipment, etc., can solve problems such as limiting the development space of VEMA polymers, and achieve improved uniformity and precision. Resolution, good hydrophilicity, not easy to pour

Inactive Publication Date: 2005-11-23
EVERLIGHT CHEMICAL INDUSTRIAL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the development space of VEMA polymers is limited.

Method used

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  • Chemical amplification photo resist composition
  • Chemical amplification photo resist composition
  • Chemical amplification photo resist composition

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0039] Regarding the preparation of the compound of formula (III), the following formula method can be used for synthesis, but not limited to the following synthesis:

[0040]

[0041] Take appropriate alcohols and pass through acetylene in the KOH / DMSO system, and keep stirring for one hour under sufficient pressure and temperature. After the solution is cooled, add water to dilute, extract, dry and concentrate to obtain light yellow naphthenic substituent vinyl ether compounds.

[0042] The aforementioned compound of formula (III) can be copolymerized with maleic anhydride to prepare a high molecular polymer with a structure of alternating copolymer (alternating copolymer), such as formula (IV)

[0043] R 1 =C n h 2n+1 (n=0~4), CF 3 Q=Alicyclic group

[0044] (IV)

[0045] where R 1 for H or C 1 -C 4 Alkyl or trifluoromethyl (CF 3 ); Q is C 4 -C 12 Cycloalkane substituents.

[0046] The aforesaid high molecular polymer containing the structural units of for...

preparation example 1

[0081] Synthesis of polymer formula (I-1a)

[0082] Add 30 ml of tetrahydrofuran (THF), 2.84 g of tert-butyl methacrylate, 3.92 g of maleic anhydride, and 5.04 g of cyclohexyl vinyl ether into the reactor, and then add Starter 2,2'-azobisisobutyl (AIBN) 4.6 grams, and heat up to about 50 ° C, after the reaction is complete, add 50 ml of tetrahydrofuran, and then pour the reaction product into a container containing 1 liter of isopropanol In the container, a white solid is precipitated, filtered and dried to obtain 9.43 grams of a high molecular polymer white powder of formula (I-1a), with a yield of 80%, measured by GPC, with a weight average molecular weight of 13,100, and a glass transition temperature Tg = 146°C.

preparation example 2~27

[0084] Synthesis of polymer formula (I-2a) to formula (I-9a), formula (I-1b) to formula (I-9b), and formula (I-1c) to formula (I-9c)

[0085] Repeat the steps of Preparation Example 1, and use different monomers or compositions to carry out polymerization to obtain polymers with different structures such as formula (I-2a) to formula (I-9a), formula (I-1b) to formula (I-9b), and formula (I-1c) to formula (I-9c), all are white powder. The synthesis results are shown in the table below.

[0086]The following are the techniques for the convenience of setting forth the invention. In the preparation example, the synthesis of the high molecular polymer is specifically cited as formula (I-1) to formula (I-9), and formula (II-1) to formula (II-8) as the main high Molecular platform (polymer platform) for illustration. See the above-mentioned formula (I-1) to formula (I-9), and formula (II-1) to formula (II-8) shown in the polymer platform item column in the following table:

[0087]...

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Abstract

A chemically amplifying photoresist composition is disclosed, which can be used for the micropatterning process with 193-nm light source. Its advantages are high solubility and high photosensitivity.

Description

technical field [0001] The present invention relates to a photoresist composition, in particular to a chemically amplified photoresist composition containing a novel polymer. Background technique [0002] With the rapid increase of the integration level of semiconductor integrated circuits, the line width required by lithography technology is also getting smaller and smaller. Theoretically, in order to make the pattern resolution obtained by the lithography process better, a short-wavelength light source or an optical system with a larger numerical aperture can be used. Therefore, in order to meet the design rule of integrated circuits and facilitate the mass production of 1G byte DRAM, it is an inevitable trend to advance the line width of the optical lithography process to below 0.13 microns. However, the current KrF (248nm) excimer laser ( Excimer laser) is not suitable for the process of components below 0.13 microns, so the process below 0.13 microns will be carried ou...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/004G03F7/038
Inventor 陈启盛蔡茜茜简镔廖信明
Owner EVERLIGHT CHEMICAL INDUSTRIAL CORPORATION