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Acid generating agent, and radiation-sensitive resin composition

A technology of resin composition and acid generator, applied in the fields of sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin, acid generator, which can solve the problems of suspected bioaccumulation and low flammability

Inactive Publication Date: 2006-09-20
JSR CORPORATIOON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, from an environmental point of view, these photoacid generators with PFOS-type perfluoroalkylsulfonyl structures have low flammability, and their bioaccumulation is also questionable

Method used

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  • Acid generating agent, and radiation-sensitive resin composition
  • Acid generating agent, and radiation-sensitive resin composition
  • Acid generating agent, and radiation-sensitive resin composition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-19 and comparative Embodiment 1

[0929] The components in Table 1 were mixed to prepare a homogeneous solution. The solution was filtered through a membrane filter with a pore size of 0.2 μm to obtain a composition solution. The solution compositions were spin-coated on silicon wafers. Subsequently, PB was carried out under the conditions in Table 2 to form a resist coating with the thickness shown in Table 2.

[0930] As the radiation source in the examples: a stepper NSR2205 EX 12B (numerical aperture: 0.55) manufactured by Nikon Corporation was used as a KrF excimer laser (indicated by "KrF" in Table 2); Nikon Corporation The manufactured ArF excimer laser exposure device (numerical aperture: 0.55) was used as the ArF excimer laser (indicated by "ArF" in Table 2); the F 2 Excimer laser exposure device (numerical aperture: 0.60) used as F 2 excimer lasers (in Table 2 with "F 2 ” indicates); the direct recording electron beam lithography machine HL-700 manufactured by Hitachi, Ltd (a device whose acceler...

Embodiment 20-23

[0933] The components in Table 4 were mixed to prepare a homogeneous solution. The solution was filtered through a membrane filter with a pore size of 0.2 μm to obtain a composition solution. The solution components were spin-coated onto silicon wafers. Subsequently, PB was carried out under the conditions shown in Table 5 to form a resist coating with the thickness shown in Table 5.

[0934] The resist coating was exposed with a KrF excimer laser and baked (PEB) under the conditions shown in Table 5 by using a stepper NSR 2205 EX 12B (manufactured by Nikon Corp., numerical aperture: 0.55).

[0935] The resist pattern was developed by the paddle method at 23° C. for 1 minute using a 2.38 wt % tetramethylammonium hydroxide aqueous solution. The resist coating was then washed with purified water and dried to form a resist pattern. The evaluation results of each resist are shown in Table 6.

[0936] Evaluation of the resists in Examples 1-23 and Comparative Example 1 was perf...

Embodiment 23-34 and comparative Embodiment 2

[0946] Solutions of each composition having the components shown in Table 7 were evaluated. The evaluation results are shown in Table 9.

[0947] Evaluation of the resists of Examples 23-24 and Comparative Example 2 was performed as follows.

[0948] Radiation transmittance

[0949]The composition solution was applied to a quartz plate by spin coating and baked on a hot plate at 130° C. for 60 seconds to obtain a resist coating with a thickness of 0.34 μm. The radiation transmittance of the resist coating was calculated from the absorption at a wavelength of 193 nm and served as a criterion for transparency in the deep UV region.

[0950] sensitivity

[0951] The solution composition was applied by spin coating on a silicon wafer (ARC25) whose surface was covered with an ARC film (manufactured by BrewerScience Corp.) with a thickness of 820 Å, and post-baked on a hot plate under the conditions shown in Table 8 to obtain Anti-corrosion coating with a thickness of 0.34 μm. ...

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Abstract

A novel photoacid generator containg a structure of the following formula (I), <CHEM> wherein R is a monovalent organic group with a fluorine content of 50 wt% or less, a nitro group, a cyano group, or a hydrogen atom, and Z<1> and Z<2> are individually a fluorine atom or a linear or branched perfluoroalkyl group having 1-10 carbon atoms, is provided. When used in a chemically amplified radiation-sensitive resin composition, the photoacid generator exhibits high transparency, comparatively high combustibility, and no bioaccumulation, and produces an acid exhibiting high acidity, high boiling point, moderately short diffusion length in the resist coating, and low dependency to mask pattern density.

Description

field of invention [0001] The present invention relates to an acid generator, sulfonic acid, sulfonic acid derivative and radiation sensitive resin. In particular, the present invention relates to photoacid generators suitable for use in radiation-sensitive resin compositions as chemically amplified resists for microfabrication using various types of radiation, such as deep ultraviolet light, such as KrF Excimer laser, ArF excimer laser, F 2 Excimer lasers, or EUV (extreme ultraviolet), X-rays, such as synchrotron radiation, or charged particle rays, such as electron beams; also relate to sulfonic acids generated from said acid generators, used as synthetic A sulfonic acid derivative of the raw material or intermediate of the acid generator, and a positive or negative radiation-sensitive resin composition containing the acid generator. Background technique [0002] In the field of micromachining represented by the processing of integrated circuit elements, in order to achi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/004C07C309/17C07C309/19C07C309/23C07C381/12C07D333/46C07D333/78C07D335/02C07D347/00G03F7/039G03F7/075
CPCC07C309/17C07D347/00C07D333/46G03F7/0392C07C309/23C07D335/02C07C309/19C07C2102/42C07C2103/86Y10S430/115Y10S430/114G03F7/0045C07C381/12G03F7/0757C07D333/78C07C2602/42C07C2603/86G03F7/004
Inventor 江幡敏米田英司永井智树舍人达也王勇岩泽晴生西村幸生
Owner JSR CORPORATIOON
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