Polishing compsns. and polishing method using same

Abstract

A polishing composition, which contains the following components (a)-(g): (a) at least one abrasive selected from silica, alumina, cerium oxide, zirconium oxide and titanium oxide; (b) grease (c) at least one basic compound selected from ammonium salts, alkali metal salts, alkaline earth metal salts, organic amine compounds and quaternary ammonium salts; (d) at least one selected from citric acid, oxalic acid, Polishing-promoting compounds of tartaric acid, glycine, alpha-alanine and histidine; (e) at least one corrosion inhibitor selected from the group consisting of benzotriazole, benzimidazole, triazole, imidazole and toltriazole; (f) ) hydrogen peroxide and (g) water.

Description

technical field [0001] The present invention relates to a kind of polishing composition that is used for polishing the base material of semiconductor, photomask and various memory hard disks, be specifically related to a kind of polishing composition that is used for polishing the plane of device wafer to make it flat such as in semiconductor industry, It also relates to a polishing method using the composition. [0002] More specifically, the present invention relates to a polishing composition which is effective in processing device wafers in the polishing step of applying so-called chemical mechanical polishing (hereinafter referred to as "CMP") technology to semiconductor devices. High, high selectivity, and can be used to form an excellent polishing surface; also relates to the polishing method using the composition. Background technique [0003] So-called high-tech products including computers have progressed greatly in recent years, and components for these products,...

AI Technical Summary

Problems solved by technology

[0012] However, as a result of experiments conducted by the present inventors, it was confirmed that when a patterned copper layer is polished using a polishing composition containing only abrasives, glycine and hydrogen peroxide, the effect of chemical attack on the copper and the abrasion on the copper surface after polishing are significant, possible pit formation

In addition, in order to inhibit the corrosion on the copper surface, when benzotriazole, which has the effect of inhibiting the chemical corrosion of copper, is added, if the amount of benzotriazole added is too large, the grinding rate of the copper layer will be too low, and the polishing time will be too low. It's very long, so it's not efficient

[0013] In addition, when the amount of benzotriazole added is too small, a sufficient effect of inhibiting chemical attack cannot be obtained, and thus the abrasion on the copper surface cannot be sufficiently inhibited.

The present inventors conducted experiments and came to the conclusion that when polishing copper wires using a polishing composition containing abrasive grains, glycine, benzotriazole and water, it was not possible to find a composition for optimum polishing