Polishing compsns. and polishing method using same

A polishing composition and compound technology, applied in the field of polishing compositions, can solve the problems of long polishing time, inability to obtain sufficient chemical erosion inhibition effect, low copper layer grinding rate and the like

Inactive Publication Date: 2002-09-18
FUJIMI INCORPORATED
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] However, as a result of experiments conducted by the present inventors, it was confirmed that when a patterned copper layer is polished using a polishing composition containing only abrasives, glycine and hydrogen peroxide, the effect of chemical attack on the copper and the abrasion on the copper surface after polishing are significant, possible pit formation
In addition, in order to inhibit the corrosion on the copper surface, when benzotriazole, which has the effect of inhibiting the chemical corrosion of copper, is added, if the amount of benzotriazole added is too large, the grinding rate of the copper layer will be too low, and the polishing time will be too low. It's very long, so it's not efficient
[0013] In addition, when the amount of benzotriazole added is too small, a sufficient effect of inhibiting chemical attack cannot be obtained, and thus the abrasion on the copper surface cannot be sufficiently inhibited.
The present inventors conducted experiments and came to the conclusion that when polishing copper wires using a polishing composition containing abrasive grains, glycine, benzotriazole and water, it was not possible to find a composition for optimum polishing

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-42 and comparative example 1-4

[0054] A polishing composition was prepared having the components shown in Table 1. Namely in embodiment 1-6, the add-on amount of oleic acid, tetramethylammonium hydroxide, glycine, benzotriazole and hydrogen peroxide is respectively identical, only the concentration of silica colloid changes, from 0.2g / l varied to 250 g / l. As hydrogen peroxide, use a purchased 31% aqueous solution, which is mixed in immediately before polishing.

[0055] In addition, in embodiment 7-13, only the addition amount of oleic acid as aliphatic carboxylic acid is changed, changes in the range of 0.00001-0.008mol / l, and the concentration of colloidal silica is fixed at 50g / l ( Other components are the same as in Examples 1-6). Similarly, in Examples 14-19, only the equivalent ratio of oleic acid to tetramethylammonium hydroxide is changed, which is changed in the range of 0.2-3. Other components and their contents are fixed.

[0056] In embodiment 20-25, only the addition amount of glycine is c...

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PUM

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Abstract

A polishing composition comprising the following components (a) to (g): (a) at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide and titanium oxide, (b) an aliphatic carboxylic acid, (c) at least one basic compound selected from the group consisting of an ammonium salt, an alkali metal salt, an alkaline earth metal salt, an organic amine compound and a quaternary ammonium salt, (d) at least one polishing accelerating compound selected from the group consisting of citric acid, oxalic acid, tartaric acid, glycine, alpha -alanine and histidine, (e) at least one anticorrosive selected from the group consisting of benzotriazole, benzimidazole, triazole, imidazole and tolyltriazole, (f) hydrogen peroxide, and (g) water. f

Description

technical field [0001] The present invention relates to a kind of polishing composition that is used for polishing the base material of semiconductor, photomask and various memory hard disks, be specifically related to a kind of polishing composition that is used for polishing the plane of device wafer to make it flat such as in semiconductor industry, It also relates to a polishing method using the composition. [0002] More specifically, the present invention relates to a polishing composition which is effective in processing device wafers in the polishing step of applying so-called chemical mechanical polishing (hereinafter referred to as "CMP") technology to semiconductor devices. High, high selectivity, and can be used to form an excellent polishing surface; also relates to the polishing method using the composition. Background technique [0003] So-called high-tech products including computers have progressed greatly in recent years, and components for these products,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/00C09C1/68C09G1/02C09K3/14H01L21/304H01L21/306H01L21/3205H01L21/321H01L21/768
CPCC09G1/02H01L21/3212
Inventor 浅野宏酒井谦儿伊奈克芳
Owner FUJIMI INCORPORATED
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