The present invention discloses a QLED device with
graphene oxide interfacial layer and a preparation method thereof. The QLED device with the
graphene oxide interfacial layer includes a substrate, abottom
electrode, a first functional layer, a
quantum dot luminescent layer, a second functional layer, and a top
electrode, wherein the substrate, the bottom
electrode, the first functional layer, the
quantum dot luminescent layer, the second functional layer, and the top electrode are sequentially stacked.
Graphene oxide interfacial
layers with functionalized functional groups are included between the first functional group and the
quantum dot luminescent layer, and / or between the
quantum dot luminescent layer and the second functional layer. By adding the oxide interfacial
layers with functionalized functional groups between the
quantum dot luminescent layer and the functional
layers, the quantum dots and the nanoparticles in the functional layers can be closely anchored by
electrostatic interaction or bonding, thereby effectively improving the interface structure between the luminescent layer and the functional layers, passivating interface defects, and effectively improving the performance of the QLED device.