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Filming copolymer resin containing silicon coupler and its organic antiflecting coating

A technology of film-forming resin and silicon coupling agent, which is applied in the direction of coating and photosensitive materials used in optomechanical equipment, etc. It can solve the problems of photolithographic pattern deformation, affecting the smoothness and flatness of the coating film, and insufficient etching.

Inactive Publication Date: 2006-10-18
中恺投资有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The shortcomings of the existing BARC coating film are: 1. Small molecular substances may be produced during crosslinking to affect the smoothness and smoothness of the coating film itself; 2. Due to the presence of acid or alkali, the acid or alkali may migrate to the Photoresist coating will affect the quality of photolithographic pattern
If the acid or alkali migrates into the positive chemically amplified photoresist, it will cause the deformation of the photolithographic pattern, the acid will cause the undercut, and the alkali will cause the undercut (footing)

Method used

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  • Filming copolymer resin containing silicon coupler and its organic antiflecting coating
  • Filming copolymer resin containing silicon coupler and its organic antiflecting coating
  • Filming copolymer resin containing silicon coupler and its organic antiflecting coating

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0140] (1). Synthesis of 9-anthracene methyl methacrylate:

[0141]

[0142] In a 1000ml three-neck flask equipped with an electric stirrer, condenser, thermometer, temperature controller, heating mantle and nitrogen inlet, add 104 grams of 9-methylanthracenol, 40.0 grams of pyridine, and 300 grams of tetrahydrofuran. Slowly add 54.5 g of methacrylic acid chloride. After heating to 60-65°C and continuing to stir for 6 hours, the solid was removed by filtration. Add 300 g of ethyl acetate, wash with water three times, and concentrate in vacuo to obtain the product 9-anthracene methyl methacrylate with a yield of 82%.

[0143] (2). A copolymer film-forming resin containing a silicon coupling agent, prepared from the following comonomers and their contents, in the presence of a free radical initiator, by heating for copolymerization. The chemical formula (not representing sequence structure) of copolymer film-forming resin is as follows:

[0144]

[0145] 48.3 grams of 9...

Embodiment 2

[0150] (1). Synthesis of 9-anthracene ethyl methacrylate:

[0151]

[0152] In a 1000ml three-neck flask equipped with an electric stirrer, condenser, thermometer, temperature controller, heating mantle and nitrogen inlet, add 111.0 grams of 9-ethylanthracenol, 40.0 grams of pyridine, and 300 grams of tetrahydrofuran. Slowly add 54.5 g of methacrylic acid chloride. After heating to 60-65°C and continuing to stir for 6 hours, the solid was removed by filtration. Add 300 g of ethyl acetate, wash with water three times, and concentrate in vacuo to obtain the product 9-anthraceneethyl methacrylate with a yield of 81%.

[0153] (2). A copolymer film-forming resin containing a silicon coupling agent, prepared from the following comonomers and their contents, in the presence of a free radical initiator, by heating for copolymerization, the copolymer film-forming The chemical formula of the resin (not indicating the sequence structure) is as follows:

[0154]

[0155] 50.7 gr...

Embodiment 3

[0160] (1). Synthesis of [-2-hydroxyl-3-(9-anthracenemethyl)]propyl methacrylate:

[0161]

[0162] In a 1000ml three-neck flask equipped with electric stirrer, condenser, thermometer, temperature controller, heating mantle and nitrogen inlet, add 104 grams of 9-anthracene methyl alcohol, 40.0 grams of tetramethylamino ammonium hydroxide (TMAH) , 300 grams of propylene glycol monomethyl ether (PGME). Slowly add 72.5 grams of glycidyl methacrylate, heat to 120-125°C, and continue stirring for 24 hours. Add 300 g of ethyl acetate, wash with water three times, and concentrate in vacuo to obtain the product [-2-hydroxyl-3-(9-methylanthracene)]propyl methacrylate with a yield of 82%.

[0163] (2). A copolymer film-forming resin containing a silicon coupling agent, prepared from the following comonomers and their contents, in the presence of a free radical initiator, by heating for copolymerization, the copolymer film-forming The chemical formula of the resin (not indicating th...

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Abstract

The present invention is one kind of filming resin containing silicon couplant and one kind of antireflecting coating composition prepared with the resin and used in microelectronic photoetching process adopting KrF laser, ArF laser or F2 laser as exposure light source. The filming resin consists of mainly silicon-containing acrylate couplant monomer in 1-40 weight portions and acrylate couplant monomer containing light absorbing group in 1-40 20-80 weight portions, and is prepared through copolymerization in solution in the presence one free radical initiator and corresponding pre-treatment. The antireflecting coating liquid is compounded with the filming resin, stabilizer, leveling agent and small amount of additive in solvent. The silicon-containing acrylate couplant participate in the copolymerization and cross-linking reaction and may result in good photoetched pattern.

Description

technical field [0001] The present invention relates to a kind of copolymer film-forming resin (also known as "film-forming agent") containing silicon coupling agent and utilizing this film-forming resin to be formulated for use with KrF laser (248nm), ArF laser (193nm) or F 2 Laser (157nm) is the exposure light source for organic bottom anti-reflective coating (coating film) (BARC) compositions in microelectronic lithography processes. Background technique [0002] The production of large-scale integrated circuits needs to be realized through photolithography. In the high-resolution photolithography process, since the film thickness of the photoresist is getting thinner and thinner, the diffraction and reflection of light between the bottom layer of the photoresist and the silicon wafer during the exposure process will increasingly affect the quality of the photolithographic pattern. , resulting in non-vertical or uneven lithography lines, so that they cannot be molded, w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08F220/10C09D133/04G03F7/11
Inventor 冉瑞成沈吉庄学军
Owner 中恺投资有限公司
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