Microwave adjustable dielectric barium strontium titanate/bismuth zinc niobate composite film and its preparation method
A technology of barium strontium titanate thin film and barium strontium titanate, which is applied in ceramics, inorganic insulators and other directions, can solve the problems of high coercive field strength, high dielectric loss, thin film tunable characteristics and reduced quality factors, etc. The effect of temperature stability
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[0019] The preparation process of strontium barium titanate and bismuth zinc niobium precursor solution is the same
[0020] 1. Preparation of barium strontium titanate precursor solution: use analytically pure strontium acetate, barium acetate, and tetrabutyl titanate as raw materials, glacial acetic acid as solvent, and acetylacetone as chelating stabilizer to synthesize strontium barium titanate precursor solution , first according to the chemical composition into Ba 0.5 Sr 0.5 TiO 3 Dissolve barium acetate and strontium acetate satisfying the stoichiometric ratio in glacial acetic acid, fully stir at 80°C for 30 minutes, mix tetrabutyl titanate and acetylacetone at a molar ratio of 2:1, and then add the mixed solution of barium acetate , and stirred at room temperature for 30 minutes to finally obtain a clear precursor solution of barium strontium titanate with a concentration of 0.4mol / L;
[0021] 2. Preparation of bismuth, zinc and niobium precursor solution: use anal...
Embodiment 1
[0025] On the Pt-coated silicon wafer, a layer of strontium barium titanate thin film was first deposited by spin coating process, and rapidly heat-treated at 650°C for 3 minutes to obtain a strontium barium titanate thin film with cubic perovskite structure. Then deposit a bismuth-zinc-niobium thin film on the barium strontium titanate thin film, and heat rapidly at 700° C. for 3 minutes to obtain a bismuth-zinc-niobium thin film with a cubic pyrochlore structure. By repeating the above process, a six-layer composite film with 3 layers of barium strontium titanate and 3 layers of bismuth, zinc and niobium is finally obtained. The thickness is 0.5μm, and the surface is smooth without cracks. In its crystal phase structure, bismuth-zinc-niobium in the cubic pyrochlore phase and barium strontium titanate in the cubic perovskite phase exist simultaneously. The dielectric constant is 150, the dielectric loss is 1.5%, and the coercive field strength is 200KV / cm.
Embodiment 2
[0027] On the Pt-coated silicon wafer, a bismuth-zinc-niobium thin film was first deposited by spin-coating process, and rapidly heat-treated at 700°C for 3 minutes to obtain a bismuth-zinc-niobium thin film with a cubic pyrochlore structure. Then deposit a layer of strontium barium titanate thin film on the bismuth zinc niobium thin film, and rapid heat treatment at 550 DEG C for 3 minutes to obtain the strontium barium titanate thin film with cubic perovskite structure. By repeating the above process, an eight-layer composite thin film with 4 layers of barium strontium titanate and 4 layers of bismuth, zinc and niobium is finally obtained. The thickness is 0.7μm, and the surface is smooth without cracks. In its crystal phase structure, bismuth-zinc-niobium in the cubic pyrochlore phase and barium strontium titanate in the cubic perovskite phase exist simultaneously. The dielectric constant is 180, the dielectric loss is 2%, and the coercive field strength is 150KV / cm.
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