Process for preparing silumin electronic package materials

An electronic packaging material, high-silicon aluminum alloy technology, applied in the direction of circuits, electrical components, electrical solid devices, etc., can solve the problems of increased component failure rate, increased heating rate, increased circuit operating temperature, etc., to achieve improved bonding state , low thermal expansion coefficient, and improved thermal conductivity

Inactive Publication Date: 2006-12-13
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The improvement of chip integration will inevitably lead to an increase in its heat generation rate, which will cause t

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] A) Powder preparation

[0019] Industrial pure aluminum and high-purity silicon are smelted in an induction furnace according to the mass percentage of 8.8:1.2, the temperature is raised to 750 ° C, fully stirred, and the flux (30% NaCl + 47% KCl + 23% cryolite) is used to cover and slag, and use Hexachloroethane (C 2 Cl 6 ) outgassing. The metal droplets are injected into the spray device through the leak nozzle, and the metal droplets atomized by high-pressure nitrogen gas are directly sprayed into the high-pressure water flow about 200mm away from the nozzle. After cooling, the water containing Al-Si alloy powder flows through the screen and leaks. The debris is flowed into a high-speed rotating drier for dehydration treatment, and the required Al-12Si alloy powder is obtained through drying and sieving. The powder-making process parameters are attached in Table 1.

[0020] Melting temperature

(℃)

Holding time

(h)

Nozzle aperture

(m...

Embodiment 2

[0028] A) Powder preparation

[0029] Industrial pure aluminum and high-purity silicon are smelted in an induction furnace according to the mass percentage of 8:2, and the temperature is raised to 900, fully stirred, covered with flux (30% NaCl+47% KCl+23% cryolite) to form slag, and six Ethyl chloride (C 2 Cl 6 ) outgassing. The metal droplets are injected into the spray device through the leak nozzle, and the metal droplets atomized by high-pressure nitrogen gas are directly sprayed into the high-pressure water flow about 200mm away from the nozzle. After cooling, the water containing Al-Si alloy powder flows through the screen and leaks. The debris is flowed into a high-speed rotating drier for dehydration treatment, and the required Al-20Si alloy powder is obtained after drying and sieving. The powder-making process parameters are attached in Table 2.

[0030] Melting temperature

(℃)

Holding time

(h)

Nozzle aperture

(mm)

atomizing gas...

Embodiment 3

[0038] A) Powder preparation

[0039] Industrial pure aluminum and high-purity silicon are smelted in an induction furnace according to the mass percentage of 7.4:2.6, heated to 1050, fully stirred, covered with flux (30% NaCl + 47% KCl + 23% cryolite), and used six Ethyl chloride (C 2 Cl 6) outgassing. The metal droplets are injected into the spray device through the leak nozzle, and the metal droplets atomized by high-pressure nitrogen gas are directly sprayed into the high-pressure water flow about 200mm away from the nozzle. After cooling, the water containing Al-Si alloy powder flows through the screen and leaks. The debris is flowed into a high-speed rotating drier for dehydration treatment, and the required Al-26Si alloy powder is obtained after drying and sieving. The powder-making process parameters are attached in Table 3.

[0040] Melting temperature

(℃)

Holding time

(h)

Nozzle aperture

(mm)

atomizing gas

g...

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Abstract

The invention discloses a making technology of high-silafont electronic packing material, which comprises the following steps: A) preparing powder: blending industrial pure aluminum and high-pure silicon at 6-8.8:4-1.2 percentage to prepare Al-Si alloy powder; B) placing Al-Si alloy powder in the resistance stove at 250-450 deg.c for 8-32 h; cooling naturally; C) loading oxide alloy powder in the pure aluminum; proceeding squeezing disposal on the 300-500 ton hydrostatic machine through forward squeezing pattern; keeping temperature at 400-520 deg.c for 0.5-2 h for Al-Si alloy powder before squeezing; placing each squeezing mould in the heat stove at 10-21 squeezing rate to preheat at 200-400 deg.c; squeezing to produce the product. The invention can improve heat conductivity, airtightness and tensile strength obviously, which keeps low expansion coefficient.

Description

technical field [0001] The invention relates to a preparation process of an aluminum-silicon electronic packaging material, in particular to a preparation process of a high-silicon aluminum alloy electronic packaging material Background technique [0002] Since the first semiconductor integrated circuit came out in 1958, so far, the development of IC chip integration has basically followed the MOORE law. The improvement of chip integration will inevitably lead to the increase of its heating rate, which makes the operating temperature of the circuit rise continuously, which leads to the increase of component failure rate. At the same time, electronic packaging is also constantly developing in the direction of miniaturization, light weight and high-density assembly. Since the 1990s, various high-density packaging technologies, such as chip size packaging (CSP), multi-chip components ( The continuous emergence of MCM) and SLIM have further increased the heat generation rate pe...

Claims

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Application Information

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IPC IPC(8): H01L23/29B22F9/08
Inventor 杨伏良甘卫平易丹青张伟刘泓
Owner CENT SOUTH UNIV
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