Thin films of ferroelectric materials and a method for preparing same

a technology of ferroelectric materials and thin films, which is applied in the direction of metallic material coating process, liquid/solution decomposition chemical coating, coating, etc., can solve the problems of inability to randomly orientated pzn-pt films with a very low pzn composition, and inability to achieve optimal characteristics of commercial applications. , to achieve the effect of high dielectric constant, excellent piezoelectric properties and strong ferrolectriqu
US20060183249A1Active Publication Date: 2006-08-17AGENCY FOR SCI TECH & RES
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Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
AGENCY FOR SCI TECH & RES
Publication Date
2006-08-17

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Abstract

Thin films of ferroelectric material with a high mole fraction of Pb(A2+1 / 3B5+2 / 3)O3 substantially in a perovskite phase, wherein A is zinc or a combination of zinc and magnesium, and B is a valence 5 element such as niobium or tantalum, have been prepared. Typically, the mole fraction of Pb(A2+1 / 3B5+2 / 3)O3 in the ferroelectric material is >0.7. The method for preparing the thin films of ferroelectric material comprises providing a precursor solution containing lead, A2+, and B5+; modifying the precursor solution by addition of a polymer species thereto; applying the modified precursor solution to a surface of a substrate and forming a coating thereon; and (d) subjecting the coating to a heat treatment and forming the film in the perovskite phase. Optimal results have been obtained with PEG200 as the polymer species.
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Description

FIELD OF THE INVENTION

[0001] The present invention relates to thin films of a ferroelectric material and a method of preparation therefor. In particular the present invention relates to thin films of ferroelectric material with a high mole fraction of Pb(Zn1 / 3Nb2 / 3)O3 in a perovskite phase. BACKGROUND OF THE INVENTION

[0002] In recent years, perovskite oxide solid-solution systems based on ferroelectric Pb(Zn1 / 3Nb2 / 3)O3 (PZN), such as (1-x)Pb(Zn1 / 3Nb2 / 3)O3-xPbTiO3 (PZN-PT); have attracted great attention due to their extremely large electromechanical strain and high dielectric constant. A PZN-PT single crystal exhibits high electromechanical coupling coefficients (k33>90%), and high piezoelectric coefficients (d33>2200 pC / N), properties which are significantly superior to those of the most widely used piezoelectric Pb(Zr,Ti)O3 (PZT) materials. Therefore, the success in developing perovskite PZN-PT bulk single crystal is thought as the most significant breakthrough in piezoele...

Claims

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