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Coplanar gate anode tellurium-zinc-cadmium detector with capacitor gate and method for making same

A technology of cadmium zinc telluride and detectors, applied in circuits, electrical components, semiconductor devices, etc., can solve the problem of very high requirements for CZT crystals, achieve the effects of improving comprehensive performance, improving distribution, and overcoming low hole collection efficiency

Inactive Publication Date: 2009-05-06
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the devices with the above two structures have very high requirements on the quality of CZT crystals and the device preparation process.

Method used

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  • Coplanar gate anode tellurium-zinc-cadmium detector with capacitor gate and method for making same
  • Coplanar gate anode tellurium-zinc-cadmium detector with capacitor gate and method for making same
  • Coplanar gate anode tellurium-zinc-cadmium detector with capacitor gate and method for making same

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preparation example Construction

[0017] b. Preparation of electrodes: take out the corroded n-type CZT wafer, 2 Blow dry under a protective atmosphere to prepare the anode and cathode; the cathode is prepared by vacuum evaporation deposition of aluminum with a thickness of 0.8-1.5μm, and the cathode is made into a full-plane electrode; the anode is prepared on the crystal surface opposite to the cathode, and the anode is prepared by JKG-2A photolithography machine, firstly, uniformly coat a layer of photoresist collagen (positive resist) with a thickness of 1-5 μm on the surface of the wafer; after ultraviolet exposure, use 4-methyl- Aqueous ammonium hydroxide solution was developed to obtain the required electrode pattern, and then a Cr layer with a thickness of 20-60nm was deposited by vacuum evaporation, followed by an Au layer with a thickness of 400-800nm, and then anhydrous acetone was used to deposit the remaining CZT wafer. The photoresist on the surface is peeled off together with the Cr-Au composite...

Embodiment 1

[0020] Embodiment 1: The size of the crystal 4 of the coplanar grid anode CdZnTe detector 1 used in this embodiment is 10×10×10mm 3 , the polytetrafluoroethylene film (Teflon film) is used as the insulating dielectric material of the capacitor grid, its film thickness is 30 microns, and the relative dielectric constant at room temperature is 1.9 to 2.2; It evenly and evenly wraps the entire crystal 4 side tightly, forming a polytetrafluoroethylene film layer 6 around the crystal 4 side, the width of the polytetrafluoroethylene film layer 6 is equal to the height of the crystal 4 side, and then the width is equal to the polytetrafluoroethylene film layer 6. Copper foil of 80% width of vinyl fluoride film layer 6 is wrapped on the polytetrafluoroethylene film, forms a copper foil layer 7 that surrounds on the polytetrafluoroethylene film, and one side is close to the cathode 5 end face, and this copper foil layer 7 Together with the polytetrafluoroethylene film layer 6, the capa...

Embodiment 2

[0022] Embodiment 2: The size of the crystal 4 of the coplanar grid anode CdZnTe detector 1 used in this embodiment is 5×5×5mm 3, using polytetrafluoroethylene film as the insulating material of the capacitor grid, its film thickness is 180 microns, and the relative dielectric constant at room temperature is 1.9 to 2.2; the tension of the polytetrafluoroethylene film is used to make it flat and evenly tight Tightly wrap the entire crystal side, form a polytetrafluoroethylene film layer 6 around the crystal 4 side on the crystal 4 side, the width of the polytetrafluoroethylene film layer 6 is equal to the height of the crystal 4 side, and then adopt vacuum evaporation method on polytetrafluoroethylene Metal aluminum is deposited on the fluoroethylene film layer 6 to form a metal aluminum layer 7 surrounding the polytetrafluoroethylene film layer 6. The width of the aluminum layer is nine tenths of the polytetrafluoroethylene film layer 6 width, and one side is close to Cathode ...

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Abstract

The invention relates to a novel design for a coplanar-grid anode CdZnTe detector having capacitance grid and a method for making the capacitance grid. The said coplanar-grid anode device is provided with a capacitance grid to form a CdZnTe detecting device having coplanar-grid anode-capacitance grid composite structure, i.e. the anode of the CdZnTe detecting device adopts an improved coplaner-grid structure, and the cathode adopts a full plane electrode and a capacitance grid electrical connected to the cathode is added at the side of a device between the ends of anode and cathode, and the device belongs to the semiconductor detector technical field. The invention provided capacitance grid preparing technology can obtain effective correction weight potential distribution and the capacitance grid electrical connected to the cathode, therefore, the performance of the CdZnTe detector can be improved in manner of being double effected by coplanar grid anode and the side capacitance grid, and the CdZnTe detector is characterized in that: the side of a wafer disposed between the cathode and the end of the coplanar grid anode is coated with insulation medium thin film materials such as ptfe, terylene and the like for surrounding a crystal to form an insulation medium ring sleeve surrounding the sides of the crystal, and then the medium material is deposited or coated with a metallic layer to form a metallic ring sleeve surrounding the insulation medium thin film, wherein one side of the metallic ring sleeve tightly leans to the end of the cathode, and another side keep a distance from the end of the anode for 1 / 2 to 1 / 10 the height of the wafer side (i.e. the thickness of the device), and the medium ring sleeve and the metallic ring sleeve coated thereon combines together to form the side capacitance grid of the device, wherein the capacitance grid is electrically connected to the cathode to reach the same potential with the cathode.

Description

technical field [0001] The invention relates to a coplanar grid anode cadmium zinc telluride detector and a preparation method thereof, in particular to a coplanar grid anode cadmium zinc telluride detector with a capacitance grid and a preparation method thereof. Background technique [0002] CdZnTe (abbreviated as CZT), as a new generation of compound semiconductor, can work at room temperature due to its large band gap and high average atomic number, and has a large stopping power and strong radiation resistance. Compared with traditional NaI scintillator detectors, CZT detectors have higher energy resolution. With the development of CZT materials and the emergence of new devices, its application in the fields of high energy resolution energy spectrometer, high spatial resolution imaging device and high energy photon detection system is expected to become a reality. Therefore, CZT detectors have broad application prospects in medicine, space science, airports, port secur...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/115H01L31/0224H01L31/18
CPCY02P70/50
Inventor 闵嘉华桑文斌夏军钱永彪滕建勇樊建荣陆玥周晨莹胡冬妮
Owner SHANGHAI UNIV