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Method of preparing nano array structure by femtosecond laser double-photon polymerization and spherulite array assistance

A two-photon polymerization, femtosecond laser technology, used in nanostructure fabrication, nanotechnology, nanotechnology, etc.

Inactive Publication Date: 2009-09-02
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Femtosecond laser two-photon polymerization alone can only produce structures with a minimum feature size of 120 nm

Method used

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  • Method of preparing nano array structure by femtosecond laser double-photon polymerization and spherulite array assistance
  • Method of preparing nano array structure by femtosecond laser double-photon polymerization and spherulite array assistance
  • Method of preparing nano array structure by femtosecond laser double-photon polymerization and spherulite array assistance

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Embodiment 1. Using photoresist (SCR500; JSR, Japan) as raw material. First, the raw material is deposited on a single crystal silicon or optical glass substrate by spin coating, with a thickness of 500nm-2μm, and dried at 80-150°C. An aqueous solution of spherical transparent quartz particles is directly deposited on a substrate coated with photoresist by a spin coating method to form a single-layer closely arranged sub-wavelength scale spherical transparent particle array template. Then, a titanium sapphire femtosecond laser oscillator with a near-infrared band, a pulse width of 10-100 femtoseconds, a repetition rate of 20-100MHz, and a power of 1-100mW is used to focus the laser on a single On the array of subwavelength-scale spherical transparent particles closely arranged in layers, a light enhancement effect occurs between the transparent spherical particles and the surface of the raw material coating, and the light intensity distribution formed by a single transp...

Embodiment 2

[0018] Embodiment 2. The epoxy resin mixed with 4% ultraviolet photoinitiator (Irgacure 369, CIBA) by mass ratio was used as raw material. First, the raw material is deposited on a single crystal silicon or optical glass substrate by spin coating method, with a thickness of 500nm-2μm, and after drying at 80-150°C, an appropriate amount of monodisperse particles with an average diameter of 200nm to 600 The nanometer spherical transparent quartz particle aqueous solution is directly deposited on the substrate coated with photoresist by a spin coating method to form a single-layer closely arranged sub-wavelength scale spherical transparent particle array template. Then, a titanium sapphire femtosecond laser oscillator with a near-infrared band, a pulse width of 10-100 femtoseconds, a repetition rate of 20-100MHz, and a power of 1-100mW is used to focus the laser on a single On the array of subwavelength-scale spherical transparent particles closely arranged in layers, a light enh...

Embodiment 3

[0019] Embodiment 3. with the SiO of dopant mass ratio 4% ultraviolet photoinitiator (Irgacure 369, CIBA) 2 / ZrO 2 Sol-gel is the raw material. First, the raw material is deposited on a single crystal silicon or optical glass substrate by spin coating, with a thickness of 500nm-2μm, and dried at 80-150°C. An aqueous solution of spherical transparent quartz particles is directly deposited on a substrate coated with photoresist by a spin coating method to form a single-layer closely arranged sub-wavelength scale spherical transparent particle array template. Then, a titanium sapphire femtosecond laser oscillator with a near-infrared band, a pulse width of 10-100 femtoseconds, a repetition rate of 20-100MHz, and a power of 1-100mW is used to focus the laser on a single On the array of subwavelength-scale spherical transparent particles closely arranged in layers, a light enhancement effect occurs between the transparent spherical particles and the surface of the raw material co...

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Abstract

The invention relates to a method for preparing a nano-array structure by femtosecond laser two-photon polymerization assisted by a transparent spherical particle array, which belongs to the technology of preparing a nano-scale regular array by laser. The method comprises the following steps: using ultraviolet negative photoresist, epoxy or acrylic resin mixed with ultraviolet photoinitiator, or SiO2 / ZrO2 or SiO2 / TiO2 sol-gel mixed with ultraviolet photoinitiator as raw materials, spin Coated on single crystal silicon or optical substrates, coating the base layer; on the base layer, an array template of a single layer of closely arranged spherical transparent polystyrene particles or quartz glass particles is prepared; the femtosecond laser is focused on a single layer of closely arranged spherical On the transparent particle array template, when the laser energy reaches the two-photon polymerization threshold, a polymerization reaction occurs, thereby making a regular array structure below 100 nanometers on the substrate. The advantage of the present invention is that, compared with the single use of the near-field light enhancement method or the single use of the femtosecond laser two-photon polymerization method, a regular nano-array structure with smaller feature size can be prepared.

Description

technical field [0001] The invention relates to a method for preparing a nano-array structure by femtosecond laser two-photon polymerization assisted by a transparent spherical particle array, which belongs to the technology of preparing a nano-scale regular array by laser. Background technique [0002] Nanotechnology has attracted increasing interest, and various methods for fabricating regular nanoarray structures have been proposed. Among them, the near-field light enhancement technology of subwavelength transparent particles and femtosecond laser two-photon polymerization technology are two representative methods. The near-field light enhancement effect caused by Mie scattering between the surface of the chip, its light intensity distribution is Gaussian (that is, the middle height drops rapidly on both sides), and the radius of the light waist is less than or equal to the diameter of the particle, which is processed at the corresponding position on the substrate surface...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B82B3/00
Inventor 贾威王清月柴路
Owner TIANJIN UNIV